IGBT Single Transistors

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STGW30NC120HD
STGW30NC120HD - IGBT Single Transistor, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

SC09975

STMICROELECTRONICS - IGBT Single Transistor, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family ...

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1+ £7.95 (£9.54) 25+ £6.33 (£7.60) 100+ £5.31 (£6.37) 250+ £3.20 (£3.84) 1000+ £3.17 (£3.80)

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60A 2.75V 220W 1.2kV TO-247 -
IRG4PC40SPBF
IRG4PC40SPBF - IGBT Single Transistor, 60 A, 1.6 V, 160 W, 600 V, TO-247AC, 3 Pins

SC06941

INFINEON - IGBT Single Transistor, 60 A, 1.6 V, 160 W, 600 V, TO-247AC, 3 Pins

The IRG4PC40SPBF is a 600V Discrete Insulated Gate Bipolar Transistor, optimized for minimum saturation voltage and low operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • ±20V ...

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1+ £2.16 (£2.59) 10+ £2.05 (£2.46) 100+ £1.94 (£2.33) 250+ £1.83 (£2.20)

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60A 1.6V 160W 600V TO-247AC IRG4 Series
IRG4PC50UD-EPBF
IRG4PC50UD-EPBF - IGBT Single Transistor, 55 A, 2 V, 200 W, 600 V, TO-247AC, 3 Pins

SC06944

INFINEON - IGBT Single Transistor, 55 A, 2 V, 200 W, 600 V, TO-247AC, 3 Pins

The IRG4PC50UD-EPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter paramete...

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55A 2V 200W 600V TO-247AC -
HGTG20N60A4
HGTG20N60A4 - IGBT Single Transistor, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

SC06911

ON SEMICONDUCTOR - IGBT Single Transistor, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

The HGTG20N60A4 is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inpu...

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1+ £3.52 (£4.22) 10+ £2.87 (£3.44) 100+ £2.27 (£2.72) 250+ £2.15 (£2.58)

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70A 2.7V 290W 600V TO-247 -
IRG4PF50WDPBF
IRG4PF50WDPBF - IGBT Single Transistor, 51 A, 2.25 V, 200 W, 900 V, TO-247AC, 3 Pins

SC06926

INFINEON - IGBT Single Transistor, 51 A, 2.25 V, 200 W, 900 V, TO-247AC, 3 Pins

The IRG4PF50WDPBF is a 900V Warp 20 to 100kHz copack IGBT with ultrafast soft recovery diode designed for switch mode power supply, welding and PFC applications. Latest generation IGBT design and construction offers tighter parameters distribution and exce...

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1+ £5.39 (£6.47) 10+ £4.85 (£5.82) 100+ £4.31 (£5.17) 250+ £3.88 (£4.66)

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51A 2.25V 200W 900V TO-247AC -
HGTG12N60A4D
HGTG12N60A4D - IGBT Single Transistor, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 Pins

SC06907

ON SEMICONDUCTOR - IGBT Single Transistor, 54 A, 2.7 V, 167 W, 600 V, TO-247, 3 Pins

The HGTG12N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inp...

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1+ £3.01 (£3.61) 10+ £2.58 (£3.10) 100+ £2.26 (£2.71) 250+ £2.04 (£2.45)

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54A 2.7V 167W 600V TO-247 -
STGF3NC120HD
STGF3NC120HD - IGBT Single Transistor, 6 A, 2.8 V, 25 W, 1.2 kV, TO-220FP, 3 Pins

SC12798

STMICROELECTRONICS - IGBT Single Transistor, 6 A, 2.8 V, 25 W, 1.2 kV, TO-220FP, 3 Pins

The STGF3NC120HD is a very fast IGBT with ultrafast diode. This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH™ technology combined with high volt...

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1+ £1.33 (£1.60) 25+ £1.14 (£1.37) 100+ £0.75 (£0.90) 250+ £0.69 (£0.83) 1000+ £0.57 (£0.68)

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Min: 1 Mult: 1
6A 2.8V 25W 1.2kV TO-220FP -
IRG4PC50UPBF
IRG4PC50UPBF - IGBT Single Transistor, 55 A, 2.4 V, 200 W, 600 V, TO-247AC, 3 Pins

SC06945

INFINEON - IGBT Single Transistor, 55 A, 2.4 V, 200 W, 600 V, TO-247AC, 3 Pins

The IRG4PC50UPBF is a 600V Ultrafast 8 to 60kHz IGBT. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. HEXFRED diodes optimized for perf...

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55A 2.4V 200W 600V TO-247AC -
HGTG30N60A4
HGTG30N60A4 - IGBT Single Transistor, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

SC06912

ON SEMICONDUCTOR - IGBT Single Transistor, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

The HGTG30N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and low on state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low ...

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1+ £5.30 (£6.36) 10+ £4.79 (£5.75)

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75A 2.6V 463W 600V TO-247 -
IRG4PH40UPBF
IRG4PH40UPBF - IGBT Single Transistor, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 Pins

SC06947

INFINEON - IGBT Single Transistor, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 Pins

The IRG4PH40UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies up to 40kHz in hard switching, >200kHz in resonant mode. The new IGBT design provides tighter parameter distribution and higher efficiency than previous ge...

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1+ £2.95 (£3.54) 10+ £2.46 (£2.95) 100+ £2.21 (£2.65) 250+ £1.89 (£2.27)

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41A 2.43V 160W 1.2kV TO-247AC IRG4 Series
HGTG20N60B3D
HGTG20N60B3D - IGBT Single Transistor, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins

SC06913

ON SEMICONDUCTOR - IGBT Single Transistor, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins

The HGTG20N60B3D is a 600V N-channel IGBT with anti-parallel hyper fast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and th...

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1+ £4.22 (£5.06) 10+ £3.34 (£4.01)

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40A 1.8V 165W 600V TO-247 -
IRG4PC40UDPBF
IRG4PC40UDPBF - IGBT Single Transistor, 40 A, 2.4 V, 160 W, 600 V, TO-247AC, 3 Pins

SC06942

INFINEON - IGBT Single Transistor, 40 A, 2.4 V, 160 W, 600 V, TO-247AC, 3 Pins

The IRG4PC40UDPBF is a 600V Ultrafast 8 to 60kHz copack IGBT with soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. ...

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1+ £3.99 (£4.79) 10+ £3.66 (£4.39) 100+ £3.34 (£4.01) 250+ £3.01 (£3.61)

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40A 2.4V 160W 600V TO-247AC -
IRG4PC50WPBF
IRG4PC50WPBF - IGBT Single Transistor, 55 A, 2.3 V, 200 W, 600 V, TO-247AC, 3 Pins

SC06925

INFINEON - IGBT Single Transistor, 55 A, 2.3 V, 200 W, 600 V, TO-247AC, 3 Pins

The IRG4PC50WPBF is a 600V Warp 60 to 150kHz IGBT designed for switch mode power supply and PFC applications. Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. Low conduction losses and minim...

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1+ £3.88 (£4.66) 10+ £3.23 (£3.88) 100+ £3.01 (£3.61) 250+ £2.80 (£3.36)

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55A 2.3V 200W 600V TO-247AC -
IRG4PC40FDPBF
IRG4PC40FDPBF - IGBT Single Transistor, 49 A, 1.85 V, 160 W, 600 V, TO-247AC, 3 Pins

SC06940

INFINEON - IGBT Single Transistor, 49 A, 1.85 V, 160 W, 600 V, TO-247AC, 3 Pins

The IRG4PC40FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter ...

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49A 1.85V 160W 600V TO-247AC -
IRG4PH50SPBF
IRG4PH50SPBF - IGBT Single Transistor, 57 A, 1.47 V, 200 W, 1.2 kV, TO-247AC, 3 Pins

SC06948

INFINEON - IGBT Single Transistor, 57 A, 1.47 V, 200 W, 1.2 kV, TO-247AC, 3 Pins

The IRG4PH50SPBF is a 1200V DC to 1kHz IGBT optimizes for minimum saturation voltage and low operating frequencies (<1kHz). Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability.

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57A 1.47V 200W 1.2kV TO-247AC -
IRGP50B60PD1PBF
IRGP50B60PD1PBF - IGBT Single Transistor, 75 A, 2.35 V, 390 W, 600 V, TO-247AC, 3 Pins

SC06929

INFINEON - IGBT Single Transistor, 75 A, 2.35 V, 390 W, 600 V, TO-247AC, 3 Pins

The IRGP50B60PD1PBF is a 600V Warp2 IGBT with ultrafast soft recovery diode. Parallel operation for higher current applications and lower conduction losses and switching losses. Suitable for use in telecom and server SMPS, PFC and ZVS SMPS circuits. • High...

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75A 2.35V 390W 600V TO-247AC -
HGTG20N60A4D
HGTG20N60A4D - IGBT Single Transistor, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

SC06908

ON SEMICONDUCTOR - IGBT Single Transistor, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

The HGTG20N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inp...

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  • 1 will be available for delivery on Jul 1, 2018
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    70A 2.7V 290W 600V TO-247 -
    HGTG30N60A4D
    HGTG30N60A4D - IGBT Single Transistor, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

    SC06914

    ON SEMICONDUCTOR - IGBT Single Transistor, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

    The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inp...

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    75A 2.6V 463W 600V TO-247 -
    IRG4PF50WPBF
    IRG4PF50WPBF - IGBT Single Transistor, 51 A, 2.7 V, 200 W, 900 V, TO-247AC, 3 Pins

    SC06927

    INFINEON - IGBT Single Transistor, 51 A, 2.7 V, 200 W, 900 V, TO-247AC, 3 Pins

    The IRG4PF50WPBF is a 900V Warp 20 to 100kHz IGBT designed for switch mode power supply, welding and PFC applications. Latest generation IGBT design and construction offers tighter parameters distribution and exceptional reliability. Low conduction losses ...

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    51A 2.7V 200W 900V TO-247AC -
    IRG4PC30UPBF
    IRG4PC30UPBF - IGBT Single Transistor, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins

    SC06939

    INFINEON - IGBT Single Transistor, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins

    The IRG4PC30UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than gen...

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    23A 2.52V 100W 600V TO-247AC -
    IRG4BC40UPBF
    IRG4BC40UPBF - IGBT Single Transistor, 40 A, 2.4 V, 160 W, 600 V, TO-220AB, 3 Pins

    SC06936

    INFINEON - IGBT Single Transistor, 40 A, 2.4 V, 160 W, 600 V, TO-220AB, 3 Pins

    The IRG4BC40UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than gen...

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    40A 2.4V 160W 600V TO-220AB -
    IRG4BC30FDPBF
    IRG4BC30FDPBF - IGBT Single Transistor, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 Pins

    SC06934

    INFINEON - IGBT Single Transistor, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 Pins

    The IRG4BC30FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter ...

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    31A 1.9V 100W 600V TO-220AB IRG4 Series
    HGTG18N120BND
    HGTG18N120BND - IGBT Single Transistor, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 Pins

    SC06910

    ON SEMICONDUCTOR - IGBT Single Transistor, 54 A, 2.7 V, 390 W, 1.2 kV, TO-247, 3 Pins

    The HGTG18N120BND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET ...

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    54A 2.7V 390W 1.2kV TO-247 -
    IRG4PH40UDPBF
    IRG4PH40UDPBF - IGBT Single Transistor, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 Pins

    SC06946

    INFINEON - IGBT Single Transistor, 41 A, 2.43 V, 160 W, 1.2 kV, TO-247AC, 3 Pins

    The IRG4PH40UDPBF is a 1200V Ultrafast 5 to 40kHz copack IGBT with soft recovery diode. Hard switching process optimized for high operating frequency. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3....

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    41A 2.43V 160W 1.2kV TO-247AC -
    IRG4PC40WPBF
    IRG4PC40WPBF - IGBT Single Transistor, 40 A, 2.5 V, 160 W, 600 V, TO-247AC, 3 Pins

    SC06924

    INFINEON - IGBT Single Transistor, 40 A, 2.5 V, 160 W, 600 V, TO-247AC, 3 Pins

    The IRG4PC40WPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional ...

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    40A 2.5V 160W 600V TO-247AC -