Transistors

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Transistors


Transistors are essential to the world of electronics and make digital logic possible in everything from simple electronics such as radios to complex devices like computers. No matter your circuit project - trade or DIY - we can fulfil your requirements for discrete transistors. Shop MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors today!

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  Manufacturer Part No Order Code Manufacturer / Description
Avail Price For
Price Ex. VAT (Inc. VAT)
Quantity
DC Collector Current Collector Emitter Saturation Voltage Vce(on) Power Dissipation Pd Collector Emitter Voltage V(br)ceo
 
 
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TIP121
TIP121 - POWER TRANSISTOR

SC06508

STMICROELECTRONICS - POWER TRANSISTOR

The TIP121 is a complementary NPN Power Darlington Transistor with low collector-emitter saturation voltage. It is manufactured in planar technology with base island layout. The resulting transistor show exceptional high gain performance coupled with very ...

92 in stock

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Min: 1 Mult: 1
5A - 65W 80V
2N7000
2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

SC06951

ON SEMICONDUCTOR - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliabl...

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Min: 5 Mult: 5
- - 400mW -
FZT851
FZT851 - TRANSISTOR, NPN, SOT-223

SC10980

DIODES INC. - TRANSISTOR, NPN, SOT-223

The FZT851 is a NPN medium Power Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT951 • Level-1 per J-STD-020 moisture sensitivity • Green...

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1+ £0.67 (£0.80) 25+ £0.56 (£0.67) 100+ £0.45 (£0.54)

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Min: 1 Mult: 1
6A - 3W 60V
BSS123LT1G
BSS123LT1G - MOSFET Transistor, N Channel, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V

SC11036

ON SEMICONDUCTOR - MOSFET Transistor, N Channel, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V

The BSS123LT1G is a N-channel Power MOSFET with drain source voltage at 100VDC and drain current at 170mA. • AEC-Q101 Qualified • PPAP capable

390 in stock

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Min: 5 Mult: 5
- - 225mW -
BD139
BD139 - TRANSISTOR, NPN, TO-126

SC09455

STMICROELECTRONICS - TRANSISTOR, NPN, TO-126

The BD139 from STMicroelectronics is a through hole NPN complementary low voltage transistor in TO-126 (SOT-32) package. This device manufactured in epitaxial planar technology. Used for audio amplifiers and drivers, utilizing complementary or quasi comple...

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1+ £0.26 (£0.31) 10+ £0.20 (£0.24) 100+ £0.17 (£0.20) 500+ £0.14 (£0.17)

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Min: 1 Mult: 1
1.5A - 1.25W 80V
FZT653
FZT653 - TRANSISTOR, NPN, SOT-223

SC10978

DIODES INC. - TRANSISTOR, NPN, SOT-223

The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...

71 in stock

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1+ £0.92 (£1.10) 25+ £0.61 (£0.73)

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Min: 1 Mult: 1
2A - 2W 100V
IRF520NPBF
IRF520NPBF - MOSFET Transistor, N Channel, 9.7 A, 100 V, 200 mohm, 10 V, 4 V

SC08214

INFINEON - MOSFET Transistor, N Channel, 9.7 A, 100 V, 200 mohm, 10 V, 4 V

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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Min: 1 Mult: 1
- - 47W -
BC548BTA
BC548BTA - TRANSISTOR, BIPOL, NPN, 30V, TO-92-3

SC13993

ON SEMICONDUCTOR - TRANSISTOR, BIPOL, NPN, 30V, TO-92-3

DC Collector Current 100mA
Power Dissipation Pd 500mW
Collector Emitter Voltage V(br)ceo 35V

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ON SEMICONDUCTOR 

TRANSISTOR, BIPOL, NPN, 30V, TO-92-3

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DC Collector Current 100mA
Collector Emitter Saturation Voltage Vce(on) -
Power Dissipation Pd 500mW
Collector Emitter Voltage V(br)ceo 35V

69

1+ £0.12 (£0.14) Price For
Ex. VAT (Inc. VAT)
10+ £0.07 (£0.08) Price For
Ex. VAT (Inc. VAT)
100+ £0.04 (£0.05) Price For
Ex. VAT (Inc. VAT)
500+ £0.025 (£0.03) Price For
Ex. VAT (Inc. VAT)

Qty

69 in stock

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Min: 1 Mult: 1
100mA - 500mW 35V
FDN357N
FDN357N - MOSFET Transistor, N Channel, 2.5 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V

SC11040

ON SEMICONDUCTOR - MOSFET Transistor, N Channel, 2.5 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V

The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using Fairchild's proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is parti...

292 in stock

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Min: 5 Mult: 5
- - 500mW -
BC337-25
BC337-25 - SI-N 50V 0.625W 150MHZ

SC06663

UNBRANDED - SI-N 50V 0.625W 150MHZ

Power Dissipation Pd 625mW
Collector Emitter Voltage V(br)ceo 45V

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UNBRANDED 

SI-N 50V 0.625W 150MHZ

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DC Collector Current -
Collector Emitter Saturation Voltage Vce(on) -
Power Dissipation Pd 625mW
Collector Emitter Voltage V(br)ceo 45V

290

5+ £0.07 (£0.08) Price For
Ex. VAT (Inc. VAT)
25+ £0.06 (£0.07) Price For
Ex. VAT (Inc. VAT)
100+ £0.05 (£0.06) Price For
Ex. VAT (Inc. VAT)

Qty

290 in stock

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Min: 5 Mult: 5
- - 625mW 45V
STP16NF06L..
STP16NF06L.. - MOSFET Transistor, N Channel, 16 A, 60 V, 0.07 ohm, 10 V, 1 V

SC11129

STMICROELECTRONICS - MOSFET Transistor, N Channel, 16 A, 60 V, 0.07 ohm, 10 V, 1 V

The STP16NF06L from STMicroelectronics is a through hole, 60V N channel STripFET II power MOSFET in TO-220 package. This power MOSFET is the latest development of STMicroelectronis unique Single Feature Size strip based process, it has high packing density...

56 in stock

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1+ £0.52 (£0.62) 25+ £0.39 (£0.47) 100+ £0.36 (£0.43) 250+ £0.32 (£0.38)

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Min: 1 Mult: 1
- - 45W -
BSP297
BSP297 - MOSFET Transistor, N Channel, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V

SC11050

INFINEON - MOSFET Transistor, N Channel, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V

Power Dissipation Pd 1.8W

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INFINEON 

MOSFET Transistor, N Channel, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V

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DC Collector Current -
Collector Emitter Saturation Voltage Vce(on) -
Power Dissipation Pd 1.8W
Collector Emitter Voltage V(br)ceo -

54

1+ £0.52 (£0.62) Price For
Ex. VAT (Inc. VAT)
25+ £0.39 (£0.47) Price For
Ex. VAT (Inc. VAT)

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54 in stock

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Min: 1 Mult: 1
- - 1.8W -
IRF530NPBF
IRF530NPBF - MOSFET Transistor, N Channel, 17 A, 100 V, 90 mohm, 10 V, 4 V

SC08215

INFINEON - MOSFET Transistor, N Channel, 17 A, 100 V, 90 mohm, 10 V, 4 V

The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...

54 in stock

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1+ £0.88 (£1.06) 10+ £0.65 (£0.78) 100+ £0.58 (£0.70) 250+ £0.50 (£0.60)

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Min: 1 Mult: 1
- - 63W -
IRLL014NPBF
IRLL014NPBF - MOSFET Transistor, N Channel, 2 A, 55 V, 140 mohm, 10 V, 2 V

SC11046

INFINEON - MOSFET Transistor, N Channel, 2 A, 55 V, 140 mohm, 10 V, 2 V

The IRLL014NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known...

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1+ £0.31 (£0.37) 25+ £0.26 (£0.31) 100+ £0.18 (£0.22) 250+ £0.17 (£0.20)

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Min: 1 Mult: 1
- - 2.1W -
MJE340
MJE340 - SI-N 300V 0.5A 20W VIDPOW

SC06487

STMICROELECTRONICS - SI-N 300V 0.5A 20W VIDPOW

The MJE340 is a 300V Silicon Planar NPN Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Compleme...

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1+ £0.30 (£0.36) 10+ £0.28 (£0.34) 100+ £0.26 (£0.31) 500+ £0.24 (£0.29)

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Min: 1 Mult: 1
500mA - 20.8W 300V
HGTG20N60A4D
HGTG20N60A4D - IGBT Single Transistor, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

SC06908

ON SEMICONDUCTOR - IGBT Single Transistor, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

The HGTG20N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inp...

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Min: 1 Mult: 1
70A 2.7V 290W 600V
IRF540NPBF
IRF540NPBF - MOSFET Transistor, N Channel, 33 A, 100 V, 44 mohm, 10 V, 4 V

SC08216

INFINEON - MOSFET Transistor, N Channel, 33 A, 100 V, 44 mohm, 10 V, 4 V

The IRF540NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a res...

49 in stock

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Min: 1 Mult: 1
- - 130W -
BC548BU
BC548BU - TRANSISTOR, BIPOL, NPN, 30V, TO-92-3

SC13994

ON SEMICONDUCTOR - TRANSISTOR, BIPOL, NPN, 30V, TO-92-3

The BC548BU is a NPN epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC558

47 in stock

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Min: 1 Mult: 1
100mA - 500mW 30V
FZT751
FZT751 - TRANSISTOR, PNP, SOT-223

SC10976

DIODES INC. - TRANSISTOR, PNP, SOT-223

The FZT751 is a PNP high performance Transistor with tin plated terminals and UL94V-0-flame rated moulded plastic case. Solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT651 • Level-1 per J-STD-020 moisture sensitivity • Gree...

47 in stock

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Min: 1 Mult: 1
-3A - 2W 60V
FZT651
FZT651 - TRANSISTOR, NPN, SOT-223

SC10977

DIODES INC. - TRANSISTOR, NPN, SOT-223

The FZT651 from Diode Inc is a surface mount, 60V NPN high performance transistor in SOT-223 package. This device is based on moulded plastic and "Green" moulding compound, terminals are matte tin finish. • Automotive grade AEC-Q101 qualified • UL recogniz...

45 in stock

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Min: 1 Mult: 1
3A - 2W 60V
TIP125
TIP125 - DARLINGTON TRANSISTOR, TO-220

SC08146

UNBRANDED - DARLINGTON TRANSISTOR, TO-220

Power Dissipation Pd 65W
Collector Emitter Voltage V(br)ceo 60V

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UNBRANDED 

DARLINGTON TRANSISTOR, TO-220

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DC Collector Current -
Collector Emitter Saturation Voltage Vce(on) -
Power Dissipation Pd 65W
Collector Emitter Voltage V(br)ceo 60V

44

1+ £0.44 (£0.53) Price For
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10+ £0.33 (£0.40) Price For
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44 in stock

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- - 65W 60V
IRF640NPBF
IRF640NPBF - MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

SC11077

INFINEON - MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a res...

42 in stock

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Min: 1 Mult: 1
- - 150W -
MJ15003
MJ15003 - TRANSISTOR, NPN, TO-3

SC06779

UNBRANDED - TRANSISTOR, NPN, TO-3

Collector Emitter Voltage V(br)ceo 140V

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UNBRANDED 

TRANSISTOR, NPN, TO-3

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DC Collector Current -
Collector Emitter Saturation Voltage Vce(on) -
Power Dissipation Pd -
Collector Emitter Voltage V(br)ceo 140V

41

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- - - 140V
BC337
BC337 - TRANSISTOR, NPN TO-92

SC06661

UNBRANDED - TRANSISTOR, NPN TO-92

Collector Emitter Voltage V(br)ceo 45V

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UNBRANDED 

TRANSISTOR, NPN TO-92

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173 in stock ready for despatch (UK stock): Order before 19:00 Mon-Fri (excluding National Holidays)

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DC Collector Current -
Collector Emitter Saturation Voltage Vce(on) -
Power Dissipation Pd -
Collector Emitter Voltage V(br)ceo 45V

173

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173 in stock

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- - - 45V
BD679
BD679 - DARLINGTON TRANSISTOR, TO-126

SC06880

STMICROELECTRONICS - DARLINGTON TRANSISTOR, TO-126

The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...

40 in stock

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Min: 1 Mult: 1
4A - 40W 60V

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