Transistors

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Transistors


Shop for discrete transistors online at CPC. Choose from MOSFET, IGBT, bipolar transistors, PNP transistors and more from our large selection. Order your transistors by 7pm Monday - Friday for same day dispatch. Free delivery available.

Npn Transistors Pnp Transistors Photo Transistors Darlington Transistors Transistor Arrays
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  Manufacturer Part No Order Code Manufacturer / Description
Avail Price For
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DC Collector Current Collector Emitter Saturation Voltage Vce(on) Power Dissipation Pd Collector Emitter Voltage V(br)ceo
 
 
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ZVP3306A
ZVP3306A - MOSFET Transistor, P Channel, 160 mA, -60 V, 14 ohm, -10 V, -3.5 V

SC06975

DIODES INC. - MOSFET Transistor, P Channel, 160 mA, -60 V, 14 ohm, -10 V, -3.5 V

The ZVP3306A is a P-channel enhancement mode Vertical DMOS FET. • AEC-Q101 Qualified

   

       

 

 

 
 
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    - - 625mW -
    2SC3519
    2SC3519 - Transistor, NPN, TO3P

    SC06814

    ALLEGRO SANKEN - Transistor, NPN, TO3P

    The 2SC3519 is a silicon NPN epitaxial Planar Transistor for general purpose applications. LAPT (Large Area Parallel Transistor) line which use multiple thermally-coupled transistors in parallel. The result is composite transistors that maintain their exce...

       

           

     

     

     
     
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    15A - 130W 160V
    2SA1386
    2SA1386 - Transistor, PNP, TO3P

    SC06824

    ALLEGRO SANKEN - Transistor, PNP, TO3P

    The 2SA1386 is a -160V Silicon PNP Epitaxial Planar Transistor designed for audio and general purpose. Sanken LAPT transistor has an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology. This PNP power ...

       

           

     

     

     
     
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    -15A - 130W -160V
    2SD2390
    2SD2390 - Darlington Transistor, TO3P

    SC06886

    ALLEGRO SANKEN - Darlington Transistor, TO3P

    The 2SD2390 is a silicon NPN triple diffused Planar Transistor for audio, series regulator and general purpose. • Complement to 2SB1560

       

           

     

     

     
     
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    10A - 100W 150V
    BD237
    BD237 - Transistor, NPN, TO126

    SC09466

    CDIL - Transistor, NPN, TO126

    Collector Emitter Voltage V(br)ceo 80V

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    CDIL 

    Transistor, NPN, TO126

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    5 in stock ready for despatch (UK stock): Order before 19:00 Mon-Fri (excluding National Holidays)

    More stock available week commencing 11/06/18

    DC Collector Current -
    Collector Emitter Saturation Voltage Vce(on) -
    Power Dissipation Pd -
    Collector Emitter Voltage V(br)ceo 80V

    5

    1+ £0.30 (£0.36) Price For
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    10+ £0.26 (£0.31) Price For
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    100+ £0.18 (£0.22) Price For
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    500+ £0.13 (£0.16) Price For
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    - - - 80V
    IRF2907ZPBF
    IRF2907ZPBF - MOSFET Transistor, N Channel, 170 A, 75 V, 4.5 mohm, 10 V, 4 V

    SC08253

    INFINEON - MOSFET Transistor, N Channel, 170 A, 75 V, 4.5 mohm, 10 V, 4 V

    The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...

       

           

     

     

     
     
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    - - 330W -
    BC846B
    BC846B - Transistor, NPN SOT23

    SC06584

    NXP - Transistor, NPN SOT23

    DC Collector Current 100mA
    Power Dissipation Pd 250mW
    Collector Emitter Voltage V(br)ceo 65V

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    NXP 

    Transistor, NPN SOT23

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    More stock available week commencing 18/06/18 Contact me when back in stock
    DC Collector Current 100mA
    Collector Emitter Saturation Voltage Vce(on) -
    Power Dissipation Pd 250mW
    Collector Emitter Voltage V(br)ceo 65V

    N/A

    10+ £0.02 (£0.02) Price For
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    100+ £0.01 (£0.01) Price For
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    100mA - 250mW 65V
    2N3439
    2N3439 - Transistor, NPN TO39

    SC06793

    MULTICOMP - Transistor, NPN TO39

    The 2N3439 is a 350V Silicon NPN Bipolar Transistor intended for high voltage switching and linear amplifier applications. • Collector-base voltage(Vcbo = 450V) • Emitter-base voltage(Vebo = 7V) • Multicomp products are rated 4.6 out of 5 stars • 12-month ...

       

           

     

     

     
     
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    1A - 1W 350V
    MJ15015G
    MJ15015G - Transistor, NPN, TO3

    SC06780

    ON SEMICONDUCTOR - Transistor, NPN, TO3

    The MJ15015G is a 120V NPN complementary silicon Bipolar Transistor designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters, inverte...

       

           

     

     

     
     
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    15A - 180W 120V
    MJ11015G
    MJ11015G - Darlington Transistor, TO3

    SC09920

    ON SEMICONDUCTOR - Darlington Transistor, TO3

    The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...

       

           

     

     

     
     
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    -30A - 200W -120V
    MJE350
    MJE350 - Transistor, PNP, TO126

    SC08528

    UNBRANDED - Transistor, PNP, TO126

    Power Dissipation Pd 20W
    Collector Emitter Voltage V(br)ceo 300V

    + See all product info

    UNBRANDED 

    Transistor, PNP, TO126

    + Check Stock & Lead Times

    24 in stock ready for despatch (UK stock): Order before 19:00 Mon-Fri (excluding National Holidays)

  • 20 will be available for delivery on Jun 10, 2018
  • DC Collector Current -
    Collector Emitter Saturation Voltage Vce(on) -
    Power Dissipation Pd 20W
    Collector Emitter Voltage V(br)ceo 300V

    24

    1+ £0.32 (£0.38) Price For
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    10+ £0.27 (£0.32) Price For
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    100+ £0.24 (£0.29) Price For
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    500+ £0.20 (£0.24) Price For
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    - - 20W 300V
    FDN359AN
    FDN359AN - MOSFET Transistor, N Channel, 2.7 A, 30 V, 46 mohm, 10 V, 1.6 V

    SC06985

    ON SEMICONDUCTOR - MOSFET Transistor, N Channel, 2.7 A, 30 V, 46 mohm, 10 V, 1.6 V

    The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and batter...

       

           

     

     

     
     
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    - - 500mW -
    IRF1404PBF
    IRF1404PBF - MOSFET Transistor, N Channel, 162 A, 40 V, 4 mohm, 10 V, 4 V

    SC11147

    INFINEON - MOSFET Transistor, N Channel, 162 A, 40 V, 4 mohm, 10 V, 4 V

    The IRF1404PBF is a 40V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. • 175°C Operating temperature • Dynamic dV/dt rating • Fully avalanche rated • ...

       

           

     

     

     
     
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    - - 200W -
    MJL1302AG
    MJL1302AG - Transistor, PNP, TO264

    SC06828

    ON SEMICONDUCTOR - Transistor, PNP, TO264

    The MJL1302AG is a -260V PNP Bipolar Complementary Power Transistor designed for use in high end consumer audio products and professional audio amplifiers such as theatre and stadium sound systems as well public address systems (PAs). • Exceptional safe op...

       

           

     

     

     
     
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    15A - 200W 200V
    IRF9Z34NPBF
    IRF9Z34NPBF - MOSFET Transistor, P Channel, 17 A, 55 V, 100 mohm, -10 V, -4 V

    SC11120

    INFINEON - MOSFET Transistor, P Channel, 17 A, 55 V, 100 mohm, -10 V, -4 V

    The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

       

           

     

     

     
     
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    - - 56W -
    IRF740APBF
    IRF740APBF - MOSFET Transistor, N Channel, 10 A, 400 V, 550 mohm, 10 V, 4 V

    SC11085

    VISHAY - MOSFET Transistor, N Channel, 10 A, 400 V, 550 mohm, 10 V, 4 V

    The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...

       

           

     

     

     
     
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    - - 125W -
    2N2905A
    2N2905A - Transistor, PNP, TO39

    SC06713

    UNBRANDED - Transistor, PNP, TO39

    Power Dissipation Pd 600mW
    Collector Emitter Voltage V(br)ceo 60V

    + See all product info

    UNBRANDED 

    Transistor, PNP, TO39

    + Check Stock & Lead Times

    35 in stock ready for despatch (UK stock): Order before 19:00 Mon-Fri (excluding National Holidays)

    More stock available week commencing 18/06/18

    DC Collector Current -
    Collector Emitter Saturation Voltage Vce(on) -
    Power Dissipation Pd 600mW
    Collector Emitter Voltage V(br)ceo 60V

    35

    5+ £0.48 (£0.58) Price For
    Ex. VAT (Inc. VAT)
    25+ £0.35 (£0.42) Price For
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    100+ £0.28 (£0.34) Price For
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    500+ £0.22 (£0.26) Price For
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    - - 600mW 60V
    FQA19N60.
    FQA19N60. - MOSFET Transistor, N Channel, 18.5 A, 600 V, 380 mohm, 10 V, 3 V

    SC06315

    ON SEMICONDUCTOR - MOSFET Transistor, N Channel, 18.5 A, 600 V, 380 mohm, 10 V, 3 V

    Power Dissipation Pd 300W

    + See all product info

    ON SEMICONDUCTOR 

    MOSFET Transistor, N Channel, 18.5 A, 600 V, 380 mohm, 10 V, 3 V

    + Check Stock & Lead Times

    1 in stock ready for despatch (UK stock): Order before 19:00 Mon-Fri (excluding National Holidays)

    More stock available week commencing 18/06/18

    DC Collector Current -
    Collector Emitter Saturation Voltage Vce(on) -
    Power Dissipation Pd 300W
    Collector Emitter Voltage V(br)ceo -

    1

    1+ £3.06 (£3.67) Price For
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    25+ £2.34 (£2.81) Price For
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    - - 300W -
    BD680
    BD680 - Darlington Transistor, TO126

    SC06882

    STMICROELECTRONICS - Darlington Transistor, TO126

    The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency

       

           

     

     

     
     
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    4A - 40W 60V
    2N3440
    2N3440 - Transistor, NPN TO39

    SC06794

    UNBRANDED - Transistor, NPN TO39

    Collector Emitter Voltage V(br)ceo 250V

    + See all product info

    UNBRANDED 

    Transistor, NPN TO39

    + Check Stock & Lead Times

    1 in stock ready for despatch (UK stock): Order before 19:00 Mon-Fri (excluding National Holidays)

  • 10 will be available for delivery on May 22, 2018
  • 20 will be available for delivery on Jun 12, 2018
  • DC Collector Current -
    Collector Emitter Saturation Voltage Vce(on) -
    Power Dissipation Pd -
    Collector Emitter Voltage V(br)ceo 250V

    1

    1+ £0.57 (£0.68) Price For
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    10+ £0.44 (£0.53) Price For
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    - - - 250V
    MJL21193G
    MJL21193G - Transistor, PNP, TO264

    SC06829

    ON SEMICONDUCTOR - Transistor, PNP, TO264

    The MJL21193G is a PNP Bipolar complementary Audio Power Transistor, utilizes Perforated Emitter technology. Specifically designed for high power audio output, disk head positioners and other linear applications. • Complement to MJL21194G • Excellent Gain ...

       

           

     

     

     
     
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    16A - 200W 250V
    ZTX551
    ZTX551 - Transistor, PNP, E-Line

    SC10974

    DIODES INC. - Transistor, PNP, E-Line

    The ZTX551 is a PNP silicon planar medium power Bipolar Transistor offers -1A continuous collector current and -80V collector-base voltage. • -55 to 200°C Operating temperature range

       

           

     

     

     
     
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    1A - 1W 60V
    ULN2804A
    ULN2804A - Darlington Array 8 NPN, 2804, DIP18

    SC08608

    STMICROELECTRONICS - Darlington Array 8 NPN, 2804, DIP18

    The ULN2804A from STMicroelectronics is a through hole eight darlington array in DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features peak load current r...

       

           

     

     

     
     
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    500mA - 2.25W 50V
    FQP3N80C
    FQP3N80C - MOSFET Transistor, N Channel, 3 A, 800 V, 4 ohm, 10 V, 5 V

    SC11099

    ON SEMICONDUCTOR - MOSFET Transistor, N Channel, 3 A, 800 V, 4 ohm, 10 V, 5 V

    The FQP3N80C is a 800V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild's proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switc...

       

           

     

     

     
     
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    - - 107W -
    2N7002
    2N7002 - MOSFET Transistor, N Channel, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

    SC11027

    ON SEMICONDUCTOR - MOSFET Transistor, N Channel, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

    The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...

       

           

     

     

     
     
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    Min: Mult:
    - - 200mW -

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