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FAIRCHILD SEMICONDUCTOR  BS170  MOSFET, N, TO-92

FAIRCHILD SEMICONDUCTOR BS170
Technical Data Sheet (1.34MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
500mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
830mW
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Audio;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0002