Low

MOSFET Transistor, N Channel, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V - 

BSS123

ON SEMICONDUCTOR/FAIRCHILD BSS123

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
BSS123
Order Code:
SC06980
Technical Datasheet:
(EN)
Catalogue page:
  CPCC/3296
See all Technical Docs

Product Overview

The BSS123 from Fairchild is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Drain to source voltage (Vds) of 100V
  • Gate to source voltage of ±20V
  • Low on state resistance of 1.2ohm at Vgs 10V
  • Continuous drain current of 170mA
  • Maximum power dissipation of 360mW
  • Operating junction temperature range from -55°C to 150°C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

Product Information

:
N Channel
:
170mA
:
100V
:
1.2ohm
:
10V
:
1.7V
:
360mW
:
SOT-23
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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