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FAIRCHILD SEMICONDUCTOR  BSS123  MOSFET, N, SOT-23

FAIRCHILD SEMICONDUCTOR BSS123
Technical Data Sheet (244.39KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BSS123 from Fairchild is N channel logic level enhancement mode field effect transistor in SOT-23 package. This product is designed to minimize on state resistance while providing rugged, reliable and fast switching performance thus BSS123 are suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Drain to source voltage (Vds) of 100V
  • Gate to source voltage of ±20V
  • Low on state resistance of 1.2ohm at Vgs 10V
  • Continuous drain current of 170mA
  • Maximum power dissipation of 360mW
  • Operating junction temperature range from -55°C to 150°C

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
170mA
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.7V
Power Dissipation Pd:
360mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics
 
Related Categories

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033