Low

MOSFET Transistor, P Channel, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V - 

FDN358P

FDN358P - MOSFET Transistor, P Channel, 1.6 A, -30 V, 200 mohm, -10 V, -1.9 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
FDN358P
Order Code:
SC07005
Technical Datasheet:
(EN)
Catalogue page:
  CPCC/3296
See all Technical Docs

Product Overview

The FDN358P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power version of industry standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. It is well suited for load switching, battery charging circuits and DC-to-DC conversion application.
  • High performance Trench technology for extremely low RDS (ON)
  • 4nC Typical low gate charge

Applications

Power Management, Industrial

Product Information

:
P Channel
:
1.6A
:
-30V
:
0.2ohm
:
-10V
:
-1.9V
:
560mW
:
SOT-23
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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