Low

FAIRCHILD SEMICONDUCTOR  FDN358P  MOSFET, P, SOT-23

FAIRCHILD SEMICONDUCTOR FDN358P
Technical Data Sheet (185.24KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDN358P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power version of industry standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. It is well suited for load switching, battery charging circuits and DC-to-DC conversion application.
  • High performance Trench technology for extremely low RDS (ON)
  • 4nC Typical low gate charge

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
1.6A
Drain Source Voltage Vds:
-30V
On Resistance Rds(on):
0.2ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.9V
Power Dissipation Pd:
560mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033