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FAIRCHILD SEMICONDUCTOR  FDN359AN  MOSFET, N, SOT-23

FAIRCHILD SEMICONDUCTOR FDN359AN
Technical Data Sheet (214.25KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDN359AN is a N-channel logic level MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • Very fast switching
  • Low gate charge

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2.7A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.046ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.6V
Power Dissipation Pd:
500mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management
 
Related Categories

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033