Low

FAIRCHILD SEMICONDUCTOR  FDN5618P  MOSFET, P, SOT-23

FAIRCHILD SEMICONDUCTOR FDN5618P
Technical Data Sheet (311.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FDN5618P from Fairchild is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for DC-DC converters, load switch and power management applications.
  • High performance trench technology for extremely low Rds(ON)
  • Drain to source voltage (Vds) of -60V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) of -1.25A
  • Power dissipation (pd) of 500mW
  • Low on state resistance of 185mohm at Vgs -4.5V
  • Operating junction temperature range from -55°C to 150°C

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-1.25A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.17ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
20V
Power Dissipation Pd:
500mW
Transistor Case Style:
SuperSOT
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033