Low

MOSFET Transistor, P Channel, -1.25 A, -60 V, 170 mohm, -10 V, 20 V - 

FDN5618P

FDN5618P - MOSFET Transistor, P Channel, -1.25 A, -60 V, 170 mohm, -10 V, 20 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
FDN5618P
Order Code:
SC07007
Technical Datasheet:
(EN)
Catalogue page:
  CPCC/3296
See all Technical Docs

Product Overview

The FDN5618P from Fairchild is a surface mount, 60V P channel logic level powerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for DC-DC converters, load switch and power management applications.
  • High performance trench technology for extremely low Rds(ON)
  • Drain to source voltage (Vds) of -60V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) of -1.25A
  • Power dissipation (pd) of 500mW
  • Low on state resistance of 185mohm at Vgs -4.5V
  • Operating junction temperature range from -55°C to 150°C

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

Product Information

:
P Channel
:
-1.25A
:
-60V
:
0.17ohm
:
-10V
:
20V
:
500mW
:
SuperSOT
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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