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FAIRCHILD SEMICONDUCTOR  FQP27P06  MOSFET, P, TO-220

FAIRCHILD SEMICONDUCTOR FQP27P06
FAIRCHILD SEMICONDUCTOR FQP27P06
Technical Data Sheet (531.15KB) EN See all Technical Docs

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FAIRCHILD SEMICONDUCTOR FQP27P06
FAIRCHILD SEMICONDUCTOR FQP27P06

Product Overview

The FQP27P06 from Fairchild is a through hole, -60V P channel QFET MOSFET in TO-220 package. This device feature planar stripe and DMOS technology which has been tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supply, audio amplifier, DC motor control and variable switching power applications.
  • Low reverse transfer capacitance of typically 120pF
  • Low gate charge is typically 33nC
  • Drain to source voltage (Vds) of -60V
  • Gate to source voltage of ±25V
  • Continuous drain current (Id) of -27A
  • Power dissipation (Pd) of 120W
  • Low on state resistance of 55mohm at Vgs -10V
  • Operating temperature range -55°C to 175°C

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-27A
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
0.07ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
120W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Philippines

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.002

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