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FAIRCHILD SEMICONDUCTOR  FQP33N10  MOSFET, N, TO-220

FAIRCHILD SEMICONDUCTOR FQP33N10
FAIRCHILD SEMICONDUCTOR FQP33N10
Technical Data Sheet (515.25KB) EN See all Technical Docs

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FAIRCHILD SEMICONDUCTOR FQP33N10
FAIRCHILD SEMICONDUCTOR FQP33N10

Product Overview

The FQP33N10 is a 100V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
  • Low gate charge
  • 100% Avalanche tested
  • Improved system reliability in PFC and soft switching topologies
  • Switching loss improvements
  • Lower conduction loss
  • 175°C Maximum junction temperature rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
33A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.052ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
127W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Lighting;
  • Motor Drive & Control;
  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products