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FAIRCHILD SEMICONDUCTOR  FQP50N06  MOSFET, N, TO-220

FAIRCHILD SEMICONDUCTOR FQP50N06
FAIRCHILD SEMICONDUCTOR FQP50N06
Technical Data Sheet (716.92KB) EN See all Technical Docs

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FAIRCHILD SEMICONDUCTOR FQP50N06
FAIRCHILD SEMICONDUCTOR FQP50N06

Product Overview

The FQP50N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild's proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This device is well suited for low voltage applications such as DC/DC converters, high efficiency switching for portable and battery operated products. This product is general usage and suitable for many different applications.
  • Low gate charge
  • 100% Avalanche tested
  • Improved dv/dt capability
  • Switching loss improvements
  • Lower conduction loss
  • 175°C Maximum junction temperature rating

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
50A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.022ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
120W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Automotive
 
Related Categories

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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