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FAIRCHILD SEMICONDUCTOR  FQP85N06  MOSFET, N, TO-220

FAIRCHILD SEMICONDUCTOR FQP85N06
FAIRCHILD SEMICONDUCTOR FQP85N06
Manufacturer Part No:
FQP85N06
Order Code:
SC08213
Technical Datasheet:
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FAIRCHILD SEMICONDUCTOR FQP85N06
FAIRCHILD SEMICONDUCTOR FQP85N06

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FQP85N06 from Fairchild is a through hole, 60V N channel enhancement mode power QFET MOSFET in TO-220 package. This device features planar stripe and DMOS technology which has been especially tailored to minimize the onstate resistance and provide supe...
  • Low gate charge typically 86nC
  • Low reverse transfer capacitance of typically 165pF
  • Drain to source voltage (Vds) of 60V
  • Gate to source voltage of ±25V
  • Continuous drain current (Id) of 85A
  • Power dissipation (Pd) of 160W
  • Low on state resistance of 800mohm at Vgs 10V
  • Operating temperature range -55°C to 175°C

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
85A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.01ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
160W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products