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FAIRCHILD SEMICONDUCTOR  FQP85N06  MOSFET, N, TO-220

FAIRCHILD SEMICONDUCTOR FQP85N06
FAIRCHILD SEMICONDUCTOR FQP85N06
Technical Data Sheet (746.60KB) EN See all Technical Docs

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FAIRCHILD SEMICONDUCTOR FQP85N06
FAIRCHILD SEMICONDUCTOR FQP85N06

Product Overview

The FQP85N06 from Fairchild is a through hole, 60V N channel enhancement mode power QFET MOSFET in TO-220 package. This device features planar stripe and DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switch mode power supply, audio amplifier, DC motor control and variable switching power applications.
  • Low gate charge typically 86nC
  • Low reverse transfer capacitance of typically 165pF
  • Drain to source voltage (Vds) of 60V
  • Gate to source voltage of ±25V
  • Continuous drain current (Id) of 85A
  • Power dissipation (Pd) of 160W
  • Low on state resistance of 800mohm at Vgs 10V
  • Operating temperature range -55°C to 175°C

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
85A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.01ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
160W
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
South Korea

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products