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FAIRCHILD SEMICONDUCTOR  HGTG20N60A4D  IGBT, TO-247

FAIRCHILD SEMICONDUCTOR HGTG20N60A4D
Technical Data Sheet (224.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The HGTG20N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
  • 55ns at TJ = 125°C Fall time
ESD sensitive device, take proper precaution while handling the device.

Product Information

DC Collector Current:
70A
Collector Emitter Saturation Voltage Vce(on):
2.7V
Power Dissipation Pd:
290W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
Product Range:
-
No. of Pins:
3 Pins
MSL:
-
Operating Temperature Max:
150
Automotive Qualification Standard:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Motor Drive & Control;
  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.006

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