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FAIRCHILD SEMICONDUCTOR  MMBF170  MOSFET, N, SOT-23

FAIRCHILD SEMICONDUCTOR MMBF170
Technical Data Sheet (1.37MB) EN See all Technical Docs

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Product Overview

The MMBF170 from Fairchild is a surface mount, N channel enhancement mode field effect transistors in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. This device is suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • High density cell design for low Rds(ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
  • Drain to source voltage (Vds) of 60V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) of 500mA
  • Power dissipation (Pd) of 300mW
  • Low on state resistance of 1.2ohm at Vgs 10V
  • Operating temperature range -55°C to 150°C

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
500mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
300mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033