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FAIRCHILD SEMICONDUCTOR  NDS0605  MOSFET, P, SOT-23

FAIRCHILD SEMICONDUCTOR NDS0605
Technical Data Sheet (233.14KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NDS0605 is a P-channel enhancement-mode FET produced using Fairchild's proprietary high cell density DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. It can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
  • Voltage controlled p-channel small signal switch
  • High density cell design for low RDS (ON)
  • High saturation current

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
180mA
Drain Source Voltage Vds:
-60V
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-1.7V
Power Dissipation Pd:
360mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033