Low

FAIRCHILD SEMICONDUCTOR  NDS351AN  MOSFET, N, SOT-23

FAIRCHILD SEMICONDUCTOR NDS351AN
Technical Data Sheet (199.75KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The NDS351AN is an N-channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is particularly suited for low voltage where fast switching and low in-line power loss are needed in a very small outline surface mount package.
  • Ultra-Low gate charge
  • High performance trench technology for extremely low RDS (ON)

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.4A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
500mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Communications & Networking;
  • Power Management;
  • Consumer Electronics;
  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033