Low

MOSFET Transistor, N Channel, 280 A, 40 V, 2.3 mohm, 10 V, 4 V - 

IRF2804PBF

IRF2804PBF - MOSFET Transistor, N Channel, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
IRF2804PBF - MOSFET Transistor, N Channel, 280 A, 40 V, 2.3 mohm, 10 V, 4 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF2804PBF
Order Code:
SC08252
Technical Datasheet:
(EN)
Catalogue page:
  CPCC/3298
See all Technical Docs

Product Overview

The IRF2804PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
  • Advanced process technology
  • Ultra-low ON-resistance
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax

Applications

Power Management

Product Information

:
N Channel
:
280A
:
40V
:
0.0023ohm
:
10V
:
4V
:
330W
:
TO-220AB
:
3Pins
:
175°C
:
-
:
-
:
-
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