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INFINEON  IRF520NPBF  MOSFET, N, TO-220

INFINEON IRF520NPBF
INFINEON IRF520NPBF
Technical Data Sheet (169.62KB) EN See all Technical Docs

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INFINEON IRF520NPBF
INFINEON IRF520NPBF

Product Overview

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Dynamic dv/dt rating
  • Fully avalanche rated
  • Advanced process technology

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
9.7A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
47W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products