Low

INFINEON  IRF5305PBF  MOSFET, P, TO-220

INFINEON IRF5305PBF
INFINEON IRF5305PBF
Technical Data Sheet (119.96KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

INFINEON IRF5305PBF
INFINEON IRF5305PBF

Product Overview

The IRF5305PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is -55V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 60mohm at Vgs of -10V
  • Power dissipation Pd of 110W at 25°C
  • Continuous drain current Id of -31A at Vgs -10V and 25°C
  • Junction temperature range from -55°C to 175°C

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-31A
Drain Source Voltage Vds:
-55V
On Resistance Rds(on):
0.06ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
110W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products