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INFINEON  IRF5305PBF  MOSFET, P, TO-220

INFINEON IRF5305PBF
INFINEON IRF5305PBF
Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF5305PBF
Order Code:
SC08218
Technical Datasheet:
See all Technical Docs
INFINEON IRF5305PBF
INFINEON IRF5305PBF

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRF5305PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is -55V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 60mohm at Vgs of -10V
  • Power dissipation Pd of 110W at 25°C
  • Continuous drain current Id of -31A at Vgs -10V and 25°C
  • Junction temperature range from -55°C to 175°C

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-31A
Drain Source Voltage Vds:
-55V
On Resistance Rds(on):
0.06ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
110W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (12-Jan-2017)

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Applications

  • Power Management
  • Industrial
  • Portable Devices
  • Consumer Electronics

Legislation and Environmental

Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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