Low

MOSFET Transistor, P Channel, -31 A, -55 V, 60 mohm, -10 V, -4 V - 

IRF5305PBF

IRF5305PBF - MOSFET Transistor, P Channel, -31 A, -55 V, 60 mohm, -10 V, -4 V
IRF5305PBF - MOSFET Transistor, P Channel, -31 A, -55 V, 60 mohm, -10 V, -4 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF5305PBF
Order Code:
SC08218
Technical Datasheet:
(EN)
Catalogue page:
  CPCC/3298
See all Technical Docs

Product Overview

The IRF5305PBF from International Rectifier is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is -55V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 60mohm at Vgs of -10V
  • Power dissipation Pd of 110W at 25°C
  • Continuous drain current Id of -31A at Vgs -10V and 25°C
  • Junction temperature range from -55°C to 175°C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

Product Information

:
P Channel
:
-31A
:
-55V
:
0.06ohm
:
-10V
:
-4V
:
110W
:
TO-220AB
:
3Pins
:
175°C
:
-
:
-
:
-
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