Low

INFINEON  IRF9530NPBF  MOSFET, P, TO-220

INFINEON IRF9530NPBF
INFINEON IRF9530NPBF
Technical Data Sheet (207.98KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

INFINEON IRF9530NPBF
INFINEON IRF9530NPBF

Product Overview

The IRF9530NPBF from International Rectifier is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is -100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 200mohm
  • Power dissipation Pd of 79W at 25°C
  • Continuous drain current Id of -14A at Vgs -10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
13A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.2ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
79W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Mexico

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products