Low

IGBT Single Transistor, 55 A, 2 V, 200 W, 600 V, TO-247AC, 3 Pins - 

IRG4PC50UD-EPBF

INFINEON IRG4PC50UD-EPBF

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRG4PC50UD-EPBF
Order Code:
SC06944
Catalogue page:
  CPCC/3295

Product Overview

The IRG4PC50UD-EPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The HEXFRED™ diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing.
  • Optimized for specific application conditions
  • Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

Applications

Alternative Energy, Power Management, Maintenance & Repair

Product Information

:
55A
:
2V
:
200W
:
600V
:
TO-247AC
:
3Pins
:
150°C
:
-
:
-
:
-
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