Low

INFINEON  IRLML2502PBF  MOSFET, N, SOT-23

INFINEON IRLML2502PBF
Technical Data Sheet (182.52KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage (Vds) of 20V
  • Gate to source voltage of ±12V
  • On resistance Rds(on) of 35mohm at Vgs 4.5V
  • Power dissipation Pd of 1.25W at 25°C
  • Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
  • Operating junction temperature range from -55°C to 150°C

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4.2A
Drain Source Voltage Vds:
20V
On Resistance Rds(on):
0.045ohm
Rds(on) Test Voltage Vgs:
4.5V
Threshold Voltage Vgs:
1.2V
Power Dissipation Pd:
1.25W
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000033