Low

MOSFET Transistor, N Channel, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V - 

IRLML2502PBF

IRLML2502PBF - MOSFET Transistor, N Channel, 4.2 A, 20 V, 45 mohm, 4.5 V, 1.2 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRLML2502PBF
Order Code:
SC06987
Technical Datasheet:
(EN)
Catalogue page:
  CPCC/3296
See all Technical Docs

Product Overview

The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage (Vds) of 20V
  • Gate to source voltage of ±12V
  • On resistance Rds(on) of 35mohm at Vgs 4.5V
  • Power dissipation Pd of 1.25W at 25°C
  • Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
  • Operating junction temperature range from -55°C to 150°C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

Product Information

:
N Channel
:
4.2A
:
20V
:
0.045ohm
:
4.5V
:
1.2V
:
1.25W
:
SOT-23
:
3Pins
:
150°C
:
-
:
-
:
-
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