Low

MOSFET Transistor, N Channel, 850 mA, 30 V, 300 mohm, 10 V, 1 V - 

IRLML2803PBF

IRLML2803PBF - MOSFET Transistor, N Channel, 850 mA, 30 V, 300 mohm, 10 V, 1 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRLML2803PBF
Order Code:
SC06988
Technical Datasheet:
(EN)
Catalogue page:
  CPCC/3296
See all Technical Docs

Product Overview

The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Low profile (<1.1mm)
  • Ultra low on-resistance
  • ±20V Gate-source voltage
  • Halogen-free

Applications

Industrial

Product Information

:
N Channel
:
850mA
:
30V
:
0.3ohm
:
10V
:
1V
:
400mW
:
SOT-23
:
3Pins
:
150°C
:
-
:
-
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