Low

INFINEON  IRLML2803PBF  MOSFET, N, LOGIC, SOT-23

INFINEON IRLML2803PBF
Technical Data Sheet (271.40KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Low profile (<1.1mm)
  • Ultra low on-resistance
  • ±20V Gate-source voltage
  • Halogen-free

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
850mA
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
400mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033