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INFINEON  IRLML6302PBF  MOSFET, P, LOGIC, SOT-23

INFINEON IRLML6302PBF
Technical Data Sheet (257.24KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRLML6302PBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
  • Generation V technology
  • Low profile (<1.1mm)
  • Fast switching
  • Low static drain-to-source ON-resistance
  • Dynamic dV/dt rating
  • Fully avalanche rating
  • Halogen-free

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
600mA
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.6ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-1.5V
Power Dissipation Pd:
400mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Portable Devices;
  • Computers & Computer Peripherals;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033