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INFINEON  IRLML6402PBF  MOSFET, P, SOT-23

INFINEON IRLML6402PBF
Technical Data Sheet (122.36KB) EN See all Technical Docs

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Product Overview

The IRLML6402PBF from International Rectifier is -20V single P channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications such as battery and load management, portable electronics and PCMCIA cards and printed circuit board where space is at a premium.
  • Drain to source voltage (Vds) of -20V
  • Gate to source voltage of ±12V
  • On resistance Rds(on) of 80mohm at Vgs -2.5V
  • Power dissipation Pd of 1.3W at 25°C
  • Continuous drain current Id of -3.7A at Vgs -4.5V and 25°C
  • Operating junction temperature range from -55°C to 150°C

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-3.7A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.065ohm
Rds(on) Test Voltage Vgs:
-4.5V
Threshold Voltage Vgs:
-550mV
Power Dissipation Pd:
1.3W
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Malaysia

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000033