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NXP  PBSS4350T  TRANSISTOR, NPN, SOT-23

NXP PBSS4350T
Technical Data Sheet (338.35KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PBSS4350T is a 3A NPN breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package.
  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
  • High collector current capability
  • High collector current gain
  • Improved efficiency due to reduced heat generation
  • PNP complement is PBSS5350T
  • ZC Marking code

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
50V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
300mW
DC Collector Current:
3A
DC Current Gain hFE:
300hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Signal Processing;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000008