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NXP  PMV213SN  MOSFET, N, SOT-23

NXP PMV213SN
Technical Data Sheet (247.26KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The PMV213SN is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. It is suitable for use in DC-to-DC convertors switching applications.
  • Low conduction losses due to low ON-state resistance
  • -55 to 150°C Junction temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
1.9A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.25ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
2W
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Germany

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000033