Low

ON SEMICONDUCTOR  2N5886G  TRANSISTOR, NPN, TO-3

ON SEMICONDUCTOR 2N5886G
Technical Data Sheet (88.35KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The 2N5886G is a 25A NPN high-power complementary Silicon Transistor designed for general-purpose power amplifier and switching applications.
  • Low collector-emitter saturation voltage (1VDC maximum VCE(sat) @ 15A DC IC)
  • Low leakage current (1mA DC maximum ICEX @ rated voltage)
  • Excellent DC current gain (20 minimum hFE @ 10A DC IC)

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
4MHz
Power Dissipation Pd:
200W
DC Collector Current:
25A
DC Current Gain hFE:
4hFE
Transistor Case Style:
TO-204AA
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
2NXXXX Series
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
United States

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0115