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ON SEMICONDUCTOR  MJ11016G  DARLINGTON TRANSISTOR, TO-3

ON SEMICONDUCTOR MJ11016G
Technical Data Sheet (108.33KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
  • High DC current gain
  • Collector-base voltage (Vcbo = 120V)
  • Emitter-base voltage (Vcbo = 5V)

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
120V
Transition Frequency ft:
-
Power Dissipation Pd:
200W
DC Collector Current:
30A
DC Current Gain hFE:
1000hFE
Transistor Case Style:
TO-204AA
No. of Pins:
2Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0115