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SEMELAB  BUZ900  MOSFET, N, TO-3

SEMELAB BUZ900
Technical Data Sheet (32.90KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BUZ900 is a 160V N-channel Power MOSFET for audio applications. It features integral protection diode and enhancement mode.
  • High speed switching
  • Semefab designed and diffused
  • High voltage
  • High energy rating
  • ±14V Gate to source voltage
  • 8A Body drain diode current
  • 1°C/W Thermal resistance, junction to case

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
8A
Drain Source Voltage Vds:
160V
On Resistance Rds(on):
1.5ohm
Rds(on) Test Voltage Vgs:
-
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
125W
Transistor Case Style:
TO-3
No. of Pins:
2Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Audio

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Great Britain

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.0115