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STMICROELECTRONICS  BD139  TRANSISTOR, NPN, TO-126

STMICROELECTRONICS BD139
Technical Data Sheet (152.28KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BD139 from STMicroelectronics is a through hole NPN complementary low voltage transistor in TO-126 (SOT-32) package. This device manufactured in epitaxial planar technology. Used for audio amplifiers and drivers, utilizing complementary or quasi complementary circuits.
  • Collector to emitter voltage (Vce) is 80V
  • Collector current (Ic) is 1.5A
  • Power dissipation (Pd) is 12.5W
  • Collector to emitter saturation voltage of 500mV at 0.5A collector current
  • DC current gain (hFE) of 25 at 0.5A collector current
  • Operating junction temperature range from 150°C

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
80V
Transition Frequency ft:
-
Power Dissipation Pd:
1.25W
DC Collector Current:
1.5A
DC Current Gain hFE:
250hFE
Transistor Case Style:
TO-225AA
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Italy

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00064