STMICROELECTRONICS  BD139  Bipolar (BJT) Single Transistor, NPN, 80 V, 1.25 W, 1.5 A, 250

STMICROELECTRONICS BD139

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Product Overview


The BD139 from STMicroelectronics is a through hole NPN complementary low voltage transistor in TO-126 (SOT-32) package. This device manufactured in epitaxial planar technology. Used for audio amplifiers and drivers, utilizing complementary or quasi complementary circuits.
  • Collector to emitter voltage (Vce) is 80V
  • Collector current (Ic) is 1.5A
  • Power dissipation (Pd) is 12.5W
  • Collector to emitter saturation voltage of 500mV at 0.5A collector current
  • DC current gain (hFE) of 25 at 0.5A collector current
  • Operating junction temperature range from 150°C

Applications

Power Management; Consumer Electronics; Portable Devices; Industrial
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Product Specifications, Documents & More


  • Collector Emitter Voltage V(br)ceo: 80V
  • DC Collector Current: 1.5A
  • DC Current Gain hFE: 250
  • MSL: -
  • No. of Pins: 3
  • Operating Temperature Max: 150°C
  • Power Dissipation Pd: 1.25W
  • SVHC: No SVHC (15-Jun-2015)
  • Transistor Case Style: TO-225AA
  • Transistor Polarity: NPN
  • Transition Frequency ft: -

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Availability

Availability:  22


  • 22 in stock ready for despatch (UK stock)
   
 
Check stock and lead times
  • 150 will be available for delivery on Feb 18, 2016
  • More stock available week commencing 2/29/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: £0.23 (£0.276) £0.23

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List Price Ex. VAT (Inc. VAT)

Quantity List Price
1 - 9 £0.23 (£0.276)
10 - 99 £0.17 (£0.204)
100 - 499 £0.15 (£0.18)
500+ £0.13 (£0.156)
 
 
Low

Legislation and Environmental


  • Moisture Sensitivity Level: -
  • Country of Origin: Italy

    Country in which last significant manufacturing process was carried out

  • RoHS Compliant: Yes
      RoHS Certificate of Compliance
  • Tariff No: 85412900
  • Weight (kg): .00064
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