Low

STMICROELECTRONICS  BD241C  TRANSISTOR, NPN, TO-220

STMICROELECTRONICS BD241C
STMICROELECTRONICS BD241C
Technical Data Sheet (252.25KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

STMICROELECTRONICS BD241C
STMICROELECTRONICS BD241C

Product Overview

The BD241C is a 100V Silicon NPN Complementary Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
  • Well-controlled hFE parameter for increased reliability
  • Collector-base voltage (Vcbo = 100V)
  • Emitter-base voltage (Vcbo = 5V)

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
-
Power Dissipation Pd:
40W
DC Collector Current:
5A
DC Current Gain hFE:
25hFE
Transistor Case Style:
TO-220
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Audio;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Italy

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products