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STMICROELECTRONICS  BD679  DARLINGTON TRANSISTOR, TO-126

STMICROELECTRONICS BD679
Technical Data Sheet (377.16KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
  • Good hFE linearity
  • High fT frequency
  • Well-controlled hFE parameter for increased reliability

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
60V
Transition Frequency ft:
-
Power Dissipation Pd:
40W
DC Collector Current:
4A
DC Current Gain hFE:
750hFE
Transistor Case Style:
SOT-32
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Italy

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00064