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STMICROELECTRONICS  STP10NK60Z  MOSFET, N, TO-220

STMICROELECTRONICS STP10NK60Z
Technical Data Sheet (938.57KB) EN See all Technical Docs

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Product Overview

The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
  • Extremely high dV/dt capability

Product Information

Continuous Drain Current Id:
10A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.75ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3.75V
Power Dissipation Pd:
115W
Transistor Case Style:
TO-220
No. of Pins:
3 Pins
MSL:
-
Operating Temperature Max:
150
Transistor Polarity:
N Channel
Product Range:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
Singapore

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

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