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STMICROELECTRONICS  TIP35C  TRANSISTOR, NPN, TO-218

STMICROELECTRONICS TIP35C
Technical Data Sheet (190.09KB) EN See all Technical Docs

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Product Overview

The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with "base island" layout resulting in exceptional high gain performance coupled with very low saturation voltage and suitable for general purpose linear and switching applications.
  • Collector to emitter voltage (Vce) is 100V
  • Collector current (Ic) is 25A
  • Power dissipation (Pd) is 125W
  • Collector to emitter saturation voltage of 4V at 25A collector current
  • DC current gain (hFE) of 10 at 15A collector current
  • Operating junction temperature range from 150°C

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
3MHz
Power Dissipation Pd:
125W
DC Collector Current:
25A
DC Current Gain hFE:
50hFE
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
France

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002

Associated Products