MOSFET Transistors

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NDS352AP
NDS352AP - Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount

SC11034

Power MOSFET, P Channel, 30 V, 900 mA, 0.3 ohm, SuperSOT, Surface Mount

ONSEMI

The NDS352AP is a P-channel Logic Level Enhancement Mode Power Field Effect Transistor produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device is particularly sui...

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P Channel 30V 900mA 0.3ohm
FDN338P
FDN338P - Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount

SC11041

Power MOSFET, P Channel, 20 V, 1.6 A, 0.115 ohm, SOT-23, Surface Mount

ONSEMI

The FDN338P is a 2.5V specified P-channel MOSFET uses advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications. The SuperSOT™ -3 provides low RDS (ON) and 30% higher power handling capabilit...

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P Channel 20V 1.6A 0.115ohm
ZVN2106G
ZVN2106G - Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

SC11051

Power MOSFET, N Channel, 60 V, 700 mA, 2 ohm, SOT-223, Surface Mount

DIODES INC.

The ZVN2106G is a 60V N-channel Enhancement Mode Vertical MOSFET with matte tin plated terminals. The MOSFET is ideal for solenoids/relay driver for automotive and DC-DC converters. • Maximum continuous drain current • AEC-Q101 qualified • UL94V-0 Flammabi...

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N Channel 60V 700mA 2ohm
IRF740APBF
IRF740APBF - Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

SC11085

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole

VISHAY

The IRF740APBF is a 400V N-channel Power MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching. • Improved gate, avalanche and dyn...

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N Channel 400V 10A 0.55ohm
IRFP4668PBF
IRFP4668PBF - Power MOSFET, N Channel, 200 V, 130 A, 0.0097 ohm, TO-247AC, Through Hole

SC11169

Power MOSFET, N Channel, 200 V, 130 A, 0.0097 ohm, TO-247AC, Through Hole

INFINEON

The IRFP4668PBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterrupti...

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N Channel 200V 130A 0.0097ohm
STP10NK60Z
STP10NK60Z - Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

SC08225

Power MOSFET, N Channel, 600 V, 10 A, 0.75 ohm, TO-220, Through Hole

STMICROELECTRONICS

The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well-established strip based PowerME...

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N Channel 600V 10A 0.75ohm
FDN304P
FDN304P - Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

SC07004

Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN304P is P channel 1.8V specified PowerTrench MOSFET in superSOT-3 package. This product features fast switching speed, high performance trench technology for extremely low Rds(on), thus suite for applications such as battery management, load switch ...

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P Channel 20V 2.4A 0.052ohm
NX7002AK
NX7002AK - Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount

SC13942

Power MOSFET, N Channel, 60 V, 190 mA, 3 ohm, TO-236AB, Surface Mount

NXP

The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Very Fast Switching • ESD Protection Upto 1.5kV

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N Channel 60V 190mA 3ohm
SIR422DP-T1-GE3
SIR422DP-T1-GE3 - Power MOSFET, N Channel, 40 V, 40 A, 0.0066 ohm, PowerPAK SO, Surface Mount

SC16864

Power MOSFET, N Channel, 40 V, 40 A, 0.0066 ohm, PowerPAK SO, Surface Mount

VISHAY

The SIR422DP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. Suitable for use in synchronous rectification and point of load converter circuits. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and wit...

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N Channel 40V 40A 0.0066ohm
FDS4435BZ
FDS4435BZ - Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount

SC16772

Power MOSFET, P Channel, 30 V, 8.8 A, 0.02 ohm, SOIC, Surface Mount

ONSEMI

The FDS4435BZ is a -30V P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches com...

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P Channel 30V 8.8A 0.02ohm
BS170-D27Z
BS170-D27Z - Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

SC15773

Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

ONSEMI

The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...

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N Channel 60V 500mA 5ohm
DMN3404L-7
DMN3404L-7 - Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount

SC16731

Power MOSFET, N Channel, 30 V, 4.2 A, 0.028 ohm, SOT-23, Surface Mount

DIODES INC.

The DMN3404L-7 is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain sup...

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N Channel 30V 4.2A 0.028ohm
BSH111BKR
BSH111BKR - Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD

SC16763

Trench Power MOSFET, N Channel, 55V, 210mA, 2.3 Ohm, SOT-23, SMD

NEXPERIA

The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for relay driver, high speed line driver, low-side ...

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N Channel 55V 210mA 4ohm
IRLML9301TRPBF
IRLML9301TRPBF - Power MOSFET, P Channel, 30 V, 3.6 A, 0.064 ohm, SOT-23, Surface Mount

SC16719

Power MOSFET, P Channel, 30 V, 3.6 A, 0.064 ohm, SOT-23, Surface Mount

INFINEON

The IRLML9301TRPBF is a P-channel HEXFET® Power MOSFET with lower switch losses, increased reliability, industry-standard pinout and compatible with existing surface mount techniques. • Multi-vendor compatibility • Environment-friendly • MSL1, Consumer qua...

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P Channel 30V 3.6A 0.064ohm
BSS131H6327XTSA1
BSS131H6327XTSA1 - Power MOSFET, N Channel, 240 V, 110 mA, 14 ohm, SOT-23, Surface Mount

SC16714

Power MOSFET, N Channel, 240 V, 110 mA, 14 ohm, SOT-23, Surface Mount

INFINEON

The BSS131 H6327 is a N-channel Small Signal MOSFET qualified according to AEC-Q101 standard. • Enhancement-mode • Avalanche rated • Super logic level • dV/dt Rated • Green device

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N Channel 240V 110mA 14ohm
IRFP450PBF
IRFP450PBF - Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

SC17006

Power MOSFET, N Channel, 500 V, 14 A, 0.4 ohm, TO-247AC, Through Hole

VISHAY

The IRFP450PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • Easy to ...

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N Channel 500V 14A 0.4ohm
2N7002-7-F
2N7002-7-F - Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

SC15986

Power MOSFET, N Channel, 60V, 115mA, 13.5 Ohm, SOT-23, SMD

DIODES INC.

The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet ma...

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N Channel 60V 210mA 5ohm
IRFB7430PBF
IRFB7430PBF - Power MOSFET, N Channel, 40 V, 195 A, 0.0013 ohm, TO-220AB, Through Hole

SC16945

Power MOSFET, N Channel, 40 V, 195 A, 0.0013 ohm, TO-220AB, Through Hole

INFINEON

Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-...

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N Channel 40V 195A 0.0013ohm
IRFP460APBF
IRFP460APBF - N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

SC16962

N Channel Power MOSFET, 500V, 20A, 0.27 Ohm, TO-247AC

VISHAY

• Improved gate, avalanche and dynamic dv/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS (ON)

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N Channel 500V 20A 0.27ohm
SQJ459EP-T1_GE3
SQJ459EP-T1_GE3 - Power MOSFET, P Channel, 60 V, 52 A, 0.018 ohm, PowerPAK SO, Surface Mount

SC16852

Power MOSFET, P Channel, 60 V, 52 A, 0.018 ohm, PowerPAK SO, Surface Mount

VISHAY

New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-chann...

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P Channel 60V 52A 0.018ohm
FDN327N
FDN327N - Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

SC16796

Power MOSFET, N Channel, 20 V, 2 A, 0.07 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN327N is a 20V specified N-channel MOSFET uses high voltage PowerTrench® process. It has been optimized for power management and load switch applications. • Fast switching speed • 4.5nC typical low gate charge

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N Channel 20V 2A 0.07ohm
STD35P6LLF6
STD35P6LLF6 - SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

SC16818

SMD P Channel Power MOSFET, 60V, 35A, 0.025 Ohm, TO-252 (DPAK)

STMICROELECTRONICS

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss

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P Channel 60V 35A 0.025ohm
IRLML0060TRPBF
IRLML0060TRPBF - Power MOSFET, N Channel, 60 V, 2.7 A, 0.092 ohm, SOT-23, Surface Mount

SC16754

Power MOSFET, N Channel, 60 V, 2.7 A, 0.092 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0060TRPBF is a N-channel HEXFET® Power MOSFET for load/system switch. • Industry Standard Pinout • MSL1, Industrial Qualification • Multi-vendor Compatibility • Environmentally-friendly • Surface Mount

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N Channel 60V 2.7A 0.092ohm
FDC6333C..
FDC6333C.. - SMD Complementary N and P Channel Dual MOSFET Transistor, SuperSOT, 30V, 2.5A

SC16694

SMD Complementary N and P Channel Dual MOSFET Transistor, SuperSOT, 30V, 2.5A

ONSEMI

The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation ...

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Complementary N and P Channel - - -
IRLR8726TRPBF
IRLR8726TRPBF - SMD N Channel Power MOSFET, 30V, 86A, 0.004 Ohm, TO-252AA

SC17015

SMD N Channel Power MOSFET, 30V, 86A, 0.004 Ohm, TO-252AA

INFINEON

• Suitable for high frequency synchronous buck converters for computer processor power • Suitable for high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use • Very Low RDS at 4.5V GS • Ultra low gate impedan...

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N Channel 30V 86A 0.0058ohm