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Darlington Array 7 NPN, 2003, DIP16 - ULN2003A

STMICROELECTRONICS ULN2003A - undefined
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoULN2003A
Order CodeSC16583
Product RangeDarlington Array
Technical Datasheet
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Product Information

ManufacturerSTMICROELECTRONICS
Manufacturer Part NoULN2003A
Order CodeSC16583
Product RangeDarlington Array
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo50V
No. of Outputs7Outputs
Power Dissipation Pd-
DC Collector Current500mA
RF Transistor CaseDIP
No. of Pins16Pins
DC Current Gain hFE1000hFE
Transistor MountingThrough Hole
Operating Temperature Max85°C
Product RangeDarlington Array
Qualification-
SVHCNo SVHC (25-Jun-2025)

Product Overview

ULN2003A is a high-voltage, high-current darlington array containing seven open collector darlington pairs with common emitters. Each channel is rated at 500mA and can withstand peak currents of 600mA. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout. Device interfaces to all common logic families: 5V TTL, CMOS. It is useful for driving a wide range of loads including solenoids, relay DC motors, LED display filament lamps, thermal printheads and high-power buffers.

  • Output voltage of 50V
  • Integrated suppression diodes for inductive loads
  • Outputs can be paralleled for higher current
  • TTL/CMOS/PMOS/DTL compatible inputs
  • Input pins placed opposite to output pins to simplify layout
  • 0.9V typical collector-emitter saturation voltage at IC = 100mA, IB = 250µA
  • 0.93mA input current I(ON) at VI = 3.85V
  • 2.4V input voltage at IC = 200mA
  • 0.25µs turn-on delay time and turn-off delay time at 0.5 VI to 0.5 VO
  • DIP-16 package, operating ambient temperature range from - 40 to 85°C

Technical Specifications

Transistor Polarity

NPN

No. of Outputs

7Outputs

DC Collector Current

500mA

No. of Pins

16Pins

Transistor Mounting

Through Hole

Product Range

Darlington Array

SVHC

No SVHC (25-Jun-2025)

Collector Emitter Voltage V(br)ceo

50V

Power Dissipation Pd

-

RF Transistor Case

DIP

DC Current Gain hFE

1000hFE

Operating Temperature Max

85°C

Qualification

-

Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:
China
Country in which last significant manufacturing process was carried out
Tariff No:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes

RoHS

SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate

Product Compliance Certificate

Weight (kg):.000907