Darlington Transistors
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Darlington Transistors
Displaying products for Darlington Transistors - from our range of leading brand manufacturers.
Unijunction Transistors | Dual Transistors | N Channel Transistors | 1a Npn Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage V(br)ceo | Power Dissipation Pd | DC Collector Current | RF Transistor Case | No. of Pins | DC Current Gain hFE | Transistor Mounting | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP127
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SC06864 |
Darlington Transistor, Darlington, PNP, 100 V, 65 W, 5 A, TO-220, 3 Pins STMICROELECTRONICS The TIP127 is a NPN-PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low sa...
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PNP | 100V | 65W | 5A | TO-220 | 3Pins | 1000hFE | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIP141
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SC06870 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP141 is a Darlington Transistor, designed for use in general-purpose amplifier and low speed switching applications. Collector-emitter sustaining voltage at 80V and power dissipation at 125W. • Monolithic construction with built-in base-emitter shunt...
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NPN | 80V | 125W | 10A | TO-247 | 3Pins | 1000hFE | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD679
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SC06880 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD679 is a 60V Silicon NPN Complementary Power Darlington Transistor manufactured in planar base island technology with monolithic Darlington configuration. Monolithic Darlington configuration with integrated anti parallel collector-emitter diode. Fast...
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NPN | 80V | 40W | 4A | SOT-32 | 3Pins | 750hFE | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BDX53CG
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SC06855 |
Darlington Transistor, TO220 ONSEMI The BDX53CG is a NPN bipolar medium-power Darlington Transistor designed for general purpose and low speed switching applications. • Complementary device • Monolithic construction with built-in base emitter shunt resistors
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NPN | 100V | 65W | 8A | TO-220 | 3Pins | 750hFE | Through Hole | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ZTX605
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SC06838 |
Darlington Transistor, E-Line DIODES INC. The ZTX605 is a 120V Silicon NPN Planar Medium Power Darlington Transistor with 1W power dissipation. • Gain of 2K at Ic = 1A
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NPN | 120V | 1W | 1A | TO-92 | 3Pins | 2000hFE | Through Hole | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP112
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SC06861 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP112 is a NPN complementary silicon epitaxial-base Power Transistor with monolithic Darlington configuration mounted in a JEDEC plastic package. It is intended for use in medium power linear and switching applications. • Integrated anti-parallel coll...
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NPN | 100V | 50W | 2A | TO-220 | 3Pins | 500hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11015G
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SC09920 |
Darlington Transistor, TO3 ONSEMI The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an outpu...
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PNP | 120V | 200W | 30A | TO-3 | 2Pins | 1000hFE | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP142
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SC08145 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP142 from Multicomp Pro are through hole, darlington transistor in TO-247(3P) package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 100V • Continuous collector current (Ic) of 10A • Power dis...
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NPN | 100V | 125W | 10A | TO-247 | 3Pins | 1000hFE | Through Hole | 150°C | Multicomp Pro Darlington Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MPSA14
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SC10647 |
Darlington Transistor, TO92 MULTICOMP PRO The MPSA14 is a NPN Darlington Transistor with 30V collector emitter voltage and 10V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & C...
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NPN | 30V | 625mW | 1.2A | TO-92 | 3Pins | 20000hFE | Through Hole | 150°C | Multicomp Pro Bipolar Transistors NPN | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX603
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SC10995 |
Darlington Transistor, E-Line DIODES INC. The ZTX603 is a 80V E-Line Silicon NPN Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much high...
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NPN | 80V | 1W | 1A | TO-92 | 3Pins | 2000hFE | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP147
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SC08147 |
Darlington Transistor, TO247 MULTICOMP PRO The TIP147 is a -100V PNP Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 100V mini...
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PNP | 100V | 125W | 10A | TO-247 | 3Pins | 1000hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120
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SC11000 |
Darlington Transistor, TO220 MULTICOMP PRO The TIP120 from Multicomp Pro are through hole, darlington transistor in TO-220 package. This transistor is used for low speed switching and amplification. • Collector emitter voltage (Vce) of 60V • Continuous collector current (Ic) of 5A • Power dissipati...
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NPN | 60V | 65W | 5A | TO-220 | 3Pins | 1000hFE | Through Hole | 150°C | Multicomp Pro Bipolar Transistor | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX614
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SC06839 |
Darlington Transistor, E-Line DIODES INC. The ZTX614 is a NPN silicon planar medium-power Darlington Transistor offers 800mA continuous collector current and 120V collector-base voltage. • Gain of 10K @ IC = 500mA • -55 to 200°C Operating temperature range
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NPN | 100V | 1W | 800mA | TO-92 | 3Pins | 10000hFE | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDX33C
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SC06854 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX33C is a NPN complementary silicon power Darlington Transistor with built-in epitaxial planar technology. Designed for use in power linear and switching applications. • Complement to BDX34C • 0.25A Base current
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NPN | 100V | 70W | 10A | TO-220 | 3Pins | 750hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDX34C
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SC10997 |
Darlington Transistor, TO220 STMICROELECTRONICS The BDX34C is a -100V Silicon Epitaxial Base PNP Power Transistor in monolithic Darlington configuration. It is intended for use in power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching...
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PNP | 100V | 70W | 10A | TO-220 | 3Pins | 750hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11016G
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SC06896 |
Darlington Transistor, TO3 ONSEMI The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor. • High ...
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NPN | 120V | 200W | 30A | TO-3 | 2Pins | 200hFE | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV67B
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SC06869 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV67B is a NPN Darlington Transistor designed in monolithic construction with built-in base-emitter shunt resistor. • -65 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *...
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NPN | 100V | 125W | 16A | TO-247 | 3Pins | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJ11033
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SC06898 |
Darlington Transistor, TO3 MULTICOMP PRO The MJ11033 is a -120V Silicon PNP Complementary Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resis...
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PNP | - | - | - | - | 2Pins | - | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD677
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SC09211 |
Darlington Transistor, TO126 MULTICOMP PRO The BD677 is a NPN power Darlington Transistor with 60V collector base voltage and 5V emitter base voltage. • -55 to 150°C Operating junction temperature range • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & ...
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NPN | 60V | 40W | 4A | SOT-32 | 3Pins | 750hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD680
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SC06882 |
Darlington Transistor, TO126 STMICROELECTRONICS The BD680 is a PNP complementary power Darlington Transistor manufactured in Planar Base Island technology. It offers monolithic Darlington configuration with integrated anti-parallel collector-emitter diode. • Good hFE linearity • High fT frequency
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PNP | 80V | 40W | 4A | SOT-32 | 3Pins | 750hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BDV66B
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SC06868 |
Darlington Transistor, TO247 MULTICOMP PRO The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor. • Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum) • Collector-emitter saturation voltage(...
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PNP | 100V | 125W | 16A | TO-247 | 3Pins | - | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZTX705
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SC06840 |
Darlington Transistor, E-Line DIODES INC. The ZTX705 is a -120V E-Line Silicon PNP Planar Medium Power Darlington Transistor with silicone encapsulate that is rated to a much higher temperature than the common epoxies. It feature allows higher temperature operation, higher power rating and much hi...
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PNP | - | - | - | - | 3Pins | - | Through Hole | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120
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SC10999 |
Darlington Transistor, TO220 STMICROELECTRONICS The TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO-220 package. This device manufactured in planar technology with “base island” layout and monolithic darlington configuration resulting in exceptional high ...
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NPN | 60V | 65W | 5A | TO-220 | 3Pins | 1000hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BU806
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SC06858 |
Darlington Transistor, TO220 MULTICOMP PRO The BU806 is a 200V NPN Darlington High Voltage Transistor for fast switching applications. • High current • Collector-emitter sustaining voltage (Vceo (sus) = 200V minimum) • Low collector-emitter saturation voltage • Multicomp Pro products are rated 4.6 ...
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NPN | 200V | 60W | 8A | TO-220 | 3Pins | 375hFE | Through Hole | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP102G
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SC06859 |
Darlington Transistor, TO220 ONSEMI The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors
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NPN | 100V | 80W | 8A | TO-220 | 3Pins | 200hFE | Through Hole | 150°C | - | - |