Semiconductor Diodes
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Semiconductor Diodes
Displaying products for Semiconductor Diodes - from our range of leading brand manufacturers.
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Diode Configuration | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Forward Surge Current | Operating Temperature Max | Diode Case Style | No. of Pins | Reverse Recovery Time | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SR304
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SC07445 |
Small Signal Schottky Diode, Single, 40 V, 3 A, 550 mV, 80 A, 125 °C TAIWAN SEMICONDUCTOR The SR304 is a Schottky Barrier Rectifier with moulded compound case and matte tin-plated lead terminals. It features high reliability, low power loss and high surge current reliability. • Low forward voltage drop • High current capability • High efficienc...
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Single | 40V | 3A | 550mV | 80A | 125°C | DO-201AD | 2Pins | - | Through Hole | SR3xx Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SR104
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SC07442 |
Small Signal Schottky Diode, Single, 40 V, 1 A, 550 mV, 60 A, 125 °C TAIWAN SEMICONDUCTOR The SR104 is a Schottky Barrier Rectifier with moulded compound case and matte tin-plated lead terminals. It features high reliability, low power loss and high surge current reliability. • Low forward voltage drop • High current capability • High efficienc...
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Single | 40V | 1A | 550mV | 60A | 125°C | DO-41 (DO-204AL) | 2Pins | - | Through Hole | SR1xx Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SR305
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SC07446 |
Small Signal Schottky Diode, Single, 50 V, 3 A, 700 mV, 80 A, 150 °C TAIWAN SEMICONDUCTOR The SR305 is a Schottky Barrier Rectifier with matte tin-plated lead terminal and UL94V-0 DO-201AD case. The barrier rectifier features low forward voltage drop, high surge current capability, low power loss and high efficiency. • Guard ring for overvoltag...
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Single | 50V | 3A | 700mV | 80A | 150°C | DO-201AD | 2Pins | - | Through Hole | SR3xx Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BA159G
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SC07375 |
Standard Recovery Diode, 1 kV, 1 A, Single, 1.2 V, 250 ns, 30 A TAIWAN SEMICONDUCTOR The BA159G is a Glass-passivated Fast Recovery Rectifier with moulded plastic with solderable axial leads. • Colour band denotes cathode end polarity • UL94V-0 Epoxy flammability rating • Low forward voltage drop • High current capability • High reliabilit...
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Single | 1kV | 1A | 1.2V | 30A | 150°C | DO-41 (DO-204AL) | 2Pins | 250ns | - | BA15xG Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5404G R0.
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SC15678 |
Standard Recovery Diode, 400V, 3A, Single, 1V, 125A TAIWAN SEMICONDUCTOR The 1N5404G is a Glass-passivated Rectifier with moulded plastic case and solderable axial leads. • Colour band denotes cathode end polarity • UL94V-0 Epoxy flammability rating • Low forward voltage drop • High current capability • High reliability • High ...
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Single | 400V | 3A | 1V | 125A | 150°C | DO-201AD | 2Pins | - | - | 1N5404 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VUO36-16NO8
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SC17442 |
Bridge Rectifier Diode, Three Phase, 1.6KV, 35A, Module, 1.7V, 5 Pins IXYS SEMICONDUCTOR The VUO36-16NO8 is a Standard Rectifier Module with 1/4-inch fast-on terminals. The rectifier module features planar passivated chips, very low forward voltage drop and improved thermal behaviour. This rectifier module is suitable for three-phase bridge co...
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1+ £9.80 (£11.76) 10+ £8.64 (£10.37) 25+ £7.86 (£9.43) |
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- | 1.6kV | 35A | 1.7V | 0 | 150°C | - | 5Pins | - | - | VUO36 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ES1DL R3G
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SC17763 |
Fast / Ultrafast Diode, 200 V, 1 A, Single, 950 mV, 35 ns, 30 A TAIWAN SEMICONDUCTOR The ES1DL is a surface-mount Super-fast Rectifier with sub SMA plastic case and lead-free pure tin-plated terminals. • Colour band cathode end • Low-profile package • Low power loss, high efficiency • Ideal for automated placement • Glass-passivated chip j...
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Single | 200V | 1A | 950mV | 30A | 150°C | Sub SMA | - | 35ns | - | ES1D | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VUO82-16NO7
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SC17460 |
Bridge Rectifier Diode, Three Phase, 1.6kV, 90A, 1.35V, 5 Pins IXYS SEMICONDUCTOR • Repetitive Peak Reverse Voltage : 1.6kV • Average Forward Current : 90A • Forward Voltage Max : 1.35V • Forward Surge Current : 0 • Operating Temperature Max : 150°C • No. of Pins : 5Pins • Product Range : VUO82
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1+ £23.03 (£27.64) 3+ £22.19 (£26.63) |
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- | 1.6kV | 90A | 1.35V | 0 | 150°C | - | 5Pins | - | - | VUO82 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MCC95-16IO1B
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SC17041 |
Thyristor Diode Module, 116A, 1600V IXYS SEMICONDUCTOR The MCC95-16IO1B is a 3-pin Dual Thyristor Module with planar passivated chip. Long-term stability, direct copper bonded Al2O3-ceramic and thyristor for line frequency. Soldering pins for PCB mounting. DCB ceramic base plate. • 1700V Maximum non-repetitive...
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- | 1.6kV | 116A | - | - | 125°C | - | 7Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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P6KE24A
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SC18692 |
TVS Diode, P6KE, Unidirectional, 20.5 V, 33.2 V, DO-15 (DO-204AC), 2 Pins TAIWAN SEMICONDUCTOR • Product Range : P6KE • TVS Polarity : Unidirectional • Reverse Standoff Voltage : 20.5V • Clamping Voltage Max : 33.2V • Diode Case Style : DO-15 (DO-204AC) • No. of Pins : 2Pins • Minimum Breakdown Voltage : 22.8V • Maximum Breakdown Voltage : 25.2V • Peak Pulse Power Dissipation : 600W • Operating Temperature Max : 175°C • Diode Mounting : Through Hole
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- | - | - | - | - | 175°C | DO-15 (DO-204AC) | 2Pins | - | Through Hole | P6KE | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4148W RH
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SC17829 |
Small Signal Switching Diode, Single, 75V, 150mA, 1V, 4ns, 2A TAIWAN SEMICONDUCTOR 150mA, 75V switching diode featuring low power loss and high efficiency. It is ideal for automated placement. • High surge current capability
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Single | 75V | 150mA | 1V | 2A | 150°C | SOD-123F | 2Pins | 4ns | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4007G R0
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SC19299 |
Standard Recovery Diode, 1kV, 1A, Single, 1V, 30A TAIWAN SEMICONDUCTOR • Glass passivated chip junction • High current capability, Low VF • High reliability • High surge current capability • Low power loss, high efficiency • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC • Halogen-free according ...
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Single | 1kV | 1A | 1V | 30A | 150°C | DO-41 (DO-204AL) | 2Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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LL4004G L0G
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SC19410 |
Standard Recovery Diode, 400V, 1A, 1.1V, 30A TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 400V • Average Forward Current : 1A • Forward Voltage Max : 1.1V • Forward Surge Current : 30A • Operating Temperature Max : 175°C • Diode Case Style : DO-213AB • Product Range : LL400xG Series
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Single | 400V | 1A | 1.1V | 30A | 175°C | DO-213AB | - | - | - | LL400xG Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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UF4007
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SC21550 |
Fast / Ultrafast Diode, 800 V, 1 A, Single, 1.7 V, 75 ns, 30 A TAIWAN SEMICONDUCTOR The UF4007 are axial leaded ultra fast recovery power diode in DO-41 package. The device features glass passivated chip junction, low cost, fast efficient plastic rectifiers, high efficiency, low forward voltage and low leakage current and high surge curre...
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Single | 800V | 1A | 1.7V | 30A | 150°C | DO-41 (DO-204AL) | - | 75ns | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S1GL
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SC21544 |
Standard Recovery Diode, Glass Passivated, 400 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 400V • Average Forward Current : 1A • Forward Voltage Max : 1.1V • Forward Surge Current : 30A • Operating Temperature Max : 150°C • Diode Case Style : Sub SMA • No. of Pins : 2Pins • Reverse Recovery Time : 1.8µs • Product Range : S1xL Series
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Single | 400V | 1A | 1.1V | 30A | 150°C | Sub SMA | 2Pins | 1.8µs | - | S1xL Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S1BL
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SC21542 |
Standard Recovery Diode, Glass Passivated, 100 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 100V • Average Forward Current : 1A • Forward Voltage Max : 1.1V • Forward Surge Current : 30A • Operating Temperature Max : 150°C • Diode Case Style : Sub SMA • No. of Pins : 2Pins • Reverse Recovery Time : 1.8µs • Product Range : S1xL Series
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Single | 100V | 1A | 1.1V | 30A | 150°C | Sub SMA | 2Pins | 1.8µs | - | S1xL Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S1B
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SC21541 |
Standard Recovery Diode, 100 V, 1 A, Single, 1.1 V, 30 A TAIWAN SEMICONDUCTOR The S1x series are surface mount standard recovery power diode in DO-214AC (SMA) package. This device features glass passivated junction, low forward voltage drop and high surge current capability. • Maximum repetitive reverse voltage Vrrm of 50V, 100V, 20...
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Single | 100V | 1A | 1.1V | 30A | 150°C | DO-214AC (SMA) | 2Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S1AL
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SC21540 |
Standard Recovery Diode, Glass Passivated, 50 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 50V • Average Forward Current : 1A • Forward Voltage Max : 1.1V • Forward Surge Current : 30A • Operating Temperature Max : 150°C • Diode Case Style : Sub SMA • No. of Pins : 2Pins • Reverse Recovery Time : 1.8µs • Product Range : S1xL Series
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Single | 50V | 1A | 1.1V | 30A | 150°C | Sub SMA | 2Pins | 1.8µs | - | S1xL Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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S1G
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SC21543 |
Standard Recovery Diode, 400 V, 1 A, Single, 1.1 V, 30 A TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 400V • Average Forward Current : 1A • Forward Voltage Max : 1.1V • Forward Surge Current : 30A • Operating Temperature Max : 150°C • Diode Case Style : DO-214AC (SMA) • No. of Pins : 2Pins • Product Range : S1 Series
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Single | 400V | 1A | 1.1V | 30A | 150°C | DO-214AC (SMA) | 2Pins | - | - | S1 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4148 A0G
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SC21531 |
Small Signal Diode, Single, 100 V, 150 mA, 1 V, 4 ns, 2 A TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 100V • Average Forward Current : 150mA • Forward Voltage Max : 1V • Forward Surge Current : 2A • Operating Temperature Max : 150°C • Diode Case Style : DO-204AH • No. of Pins : 2Pins • Reverse Recovery Time : 4ns • Diode Mounting : Through Hole
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Single | 100V | 150mA | 1V | 2A | 150°C | DO-204AH | 2Pins | 4ns | Through Hole | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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US1M
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SC21551 |
Fast / Ultrafast Diode, 1 kV, 1 A, Single, 1.7 V, 75 ns, 30 A TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 1kV • Average Forward Current : 1A • Forward Voltage Max : 1.7V • Forward Surge Current : 30A • Operating Temperature Max : 150°C • Diode Case Style : DO-214AC (SMA) • Reverse Recovery Time : 75ns • Product Range : US1x Series
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Single | 1kV | 1A | 1.7V | 30A | 150°C | DO-214AC (SMA) | - | 75ns | - | US1x Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5401G
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SC21532 |
Standard Recovery Diode, 100 V, 3 A, Single, 1.1 V, 125 A TAIWAN SEMICONDUCTOR The 1N5401G is a Glass-passivated Rectifier with moulded plastic case and pure tin-plated lead-free solderable leads. • Cathode is indicated by polarity band • High current capability • High reliability • High surge current capability • Low power loss • Hi...
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Single | 100V | 3A | 1.1V | 125A | 150°C | DO-201AD | 2Pins | - | - | 1N5401 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAT42W RHG
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SC21537 |
Small Signal Schottky Diode, Single, 30 V, 200 mA, 1 V, 4 A, 125 °C TAIWAN SEMICONDUCTOR • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 30V • Average Forward Current : 200mA • Forward Voltage Max : 1V • Forward Surge Current : 4A • Operating Temperature Max : 125°C • Diode Case Style : SOD-123 • No. of Pins : 2Pins • Reverse Recovery Time : 5ns • Diode Mounting : Surface Mount • Product Range : BAT4xW Series
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Single | 30V | 200mA | 1V | 4A | 125°C | SOD-123 | 2Pins | 5ns | Surface Mount | BAT4xW Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BYW29E-150,127
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SC21629 |
Fast / Ultrafast Diode, 150 V, 8 A, Single, 1.05 V, 25 ns, 80 A WEEN SEMICONDUCTORS • Diode Configuration : Single • Repetitive Peak Reverse Voltage : 150V • Average Forward Current : 8A • Forward Voltage Max : 1.05V • Forward Surge Current : 80A • Operating Temperature Max : 150°C • Diode Case Style : TO-220AC • Reverse Recovery Time : 25ns
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Single | 150V | 8A | 1.05V | 80A | 150°C | TO-220AC | - | 25ns | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ES1JL R3G
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SC17764 |
Fast / Ultrafast Diode, 600 V, 1 A, Single, 1.7 V, 35 ns, 30 A TAIWAN SEMICONDUCTOR The ES1JL from Taiwan Semiconductor are surface mount super fast rectifier in Sub SMA package. This device features glass passivated junction, low profile package, low power loss and high efficiency. • Automotive grade AEC-Q101 qualified • Ideal for automa...
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Single | 600V | 1A | 1.7V | 30A | 150°C | SMD | - | 35ns | - | ES1J | - |