Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Repetitive Peak Reverse Voltage Average Forward Current Diode Configuration Diode Case Style No. of Pins Forward Voltage Max Forward Surge Current Operating Temperature Max Diode Mounting Product Range Qualification
 
 
Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending Sort Acending Sort Decending
STPS20L60CT
STPS20L60CT - Schottky Rectifier, 60 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 560 mV

SC07418

Schottky Rectifier, 60 V, 20 A, Dual Common Cathode, TO-220AB, 3 Pins, 560 mV

STMICROELECTRONICS

The STPS20L60CT is a dual centre-tap Schottky Power Rectifier suitable for SWITCHMODE™ power supplies and high frequency DC to DC converters. This device is intended for use in high frequency inverters. • Low forward voltage drop • Negligible switching los...

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60V 20A Dual Common Cathode TO-220AB 3Pins 560mV 220A 150°C Through Hole - -
VS-2KBB80R
VS-2KBB80R - Bridge Rectifier, Single Phase, 800 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

SC07485

Bridge Rectifier, Single Phase, 800 V, 1.9 A, Through Hole, 4 Pins, 1.1 V

VISHAY

The VS-2KBB80R is a single-phase Bridge Rectifier with high surge current capability and compact construction. It consisting of four silicon diodes in a plastic encapsulation. This bridge rectifier is suitable for printed circuit board mounting. • 380V RMS...

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800V 1.9A - - 4Pins 1.1V 50A 150°C - VS-2KBB Series -
GBU805
GBU805 - Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 8 A, SIP, 4 Pins, 1 V

SC07511

Bridge Rectifier, Glass Passivated, Single Phase, 600 V, 8 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU805 is a single-phase glass passivated Bridge Rectifier with matte tin-plated lead terminals and UL94V-0 GBU case. The bridge rectifier features high case dielectric strength of 1500V, high surge current capability and polarity as marked on the body...

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600V 8A - - 4Pins 1V 200A 150°C - GBU80x Series -
GBU403
GBU403 - Bridge Rectifier, Glass Passivated, Single Phase, 200 V, 4 A, SIP, 4 Pins, 1 V

SC09277

Bridge Rectifier, Glass Passivated, Single Phase, 200 V, 4 A, SIP, 4 Pins, 1 V

TAIWAN SEMICONDUCTOR

The GBU403 is a 4-pin single-phase glass passivated Standard Bridge Rectifier Diode with moulded plastic body case. It has terminals leads solderable per MIL-STD- 750, Method 2026 and high temperature soldering guaranteed 250°C/10 seconds/0.375-inch lead l...

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200V 4A - - 4Pins 1V 150A 150°C - GBU40x Series -
2N6405G
2N6405G - Thyristor, 16A, 800V, TO220

SC07554

Thyristor, 16A, 800V, TO220

ONSEMI

The 2N6405G is a 3-pin Reverse Blocking Thyristor for half-wave AC control applications, such as wherever solid-state devices are needed. The 2N6400 series thyristor has glass passivated junctions with centre gate geometry for greater parameter uniformity ...

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- - - - 3Pins - - 125°C - - -
BC177
BC177 - Transistor, PNP, TO18

SC06647

Transistor, PNP, TO18

MULTICOMP PRO

The BC177 is a -45V Silicon PNP Bipolar Planar Epitaxial Transistor with low power. • Collector-base voltage(Vcbo = 50V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Condi...

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- - - - 3Pins - - 200°C - Multicomp Pro Bipolar Transistors PNP -
BC109
BC109 - Transistor, NPN, TO18

SC06717

Transistor, NPN, TO18

MULTICOMP PRO

The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...

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- - - - 3Pins - - 200°C - - -
IPP60R099CP
IPP60R099CP - Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole

SC11112

Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-220, Through Hole

INFINEON

The IPP60R099CP is a 650V N-channel CoolMOS™ Power MOSFET designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driv...

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- - - - 3Pins - - 150°C - - -
BZX79-C3V6.
BZX79-C3V6. - Zener Single Diode, 3.6 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05692

Zener Single Diode, 3.6 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - DO-35 2Pins - - 200°C - BZX79 -
IRF4905PBF
IRF4905PBF - Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

SC11119

Power MOSFET, P Channel, 55 V, 74 A, 0.02 ohm, TO-220AB, Through Hole

INFINEON

The IRF4905PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well kn...

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- - - - 3Pins - - 175°C - HEXFET Series -
1N5351BG
1N5351BG - Zener Single Diode, 14 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

SC07178

Zener Single Diode, 14 V, 5 W, 017AA, 2 Pins, 200 °C, Through Hole

ONSEMI

The 1N5333B series Surmetic™ Voltage Regulator Zener Diode with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide passivated junctions. All this in an axial lead, transfer-moulded plastic package that...

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- - - 017AA 2Pins - - 200°C Through Hole 1N53 Series -
BCV26
BCV26 - Transistor, PNP SOT23

SC06604

Transistor, PNP SOT23

ONSEMI

The BCV26 is a PNP Darlington Transistor designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from Process 61 • -55 to 150°C Operating junction temperature range

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- - - - 3Pins - - 150°C - - -
2N6073AG
2N6073AG - Triac, 4A, 400V, TO126

SC11510

Triac, 4A, 400V, TO126

ONSEMI

The 2N6073AG is a Silicon Bidirectional Thyristor/Sensitive Triac designed primarily for full‐wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full‐wave silicon gate controlled solid‐state...

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- - - - 3Pins - - 110°C - - -
BAT54FILM
BAT54FILM - Small Signal Schottky Diode, 30 V, 300 mA, 400 mV, 1 A, 150 °C

SC11325

Small Signal Schottky Diode, 30 V, 300 mA, 400 mV, 1 A, 150 °C

STMICROELECTRONICS

The BAT54FILM is a 3-pin 30V surface-mount small signal Schottky Diode with dual common cathode configuration. It accepts low forward and reverse recovery times, low conduction and reverse losses and negligible switching losses. • Extremely fast switching ...

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30V 300mA - SOT-23 3Pins 400mV 1A 150°C Surface Mount BAT54 Series -
IRF530NPBF
IRF530NPBF - Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

SC08215

Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole

INFINEON

The IRF530NPBF from Infineon is a 100V single N channel HEXFET power MOSFET in a TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and is fully avalanche rated. As a result, th...

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- - - - 3Pins - - 175°C - HEXFET Series -
BC107B
BC107B - Si-NPN Uni 50V 0.2A 0.3W Transistor

SC06645

Si-NPN Uni 50V 0.2A 0.3W Transistor

MULTICOMP PRO

The BC107B from Multicomp Pro is a low power bipolar transistor in TO-18 metal can package. This NPN silicon planar epitaxial transistor is used for general purpose switching and amplification. • Collector emitter voltage (Vce) is 45V at IC = 2mA, IB = 0 •...

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- - - - 3Pins - - 200°C - Multicomp Pro Bipolar NPN Transistor -
IRFU9024NPBF
IRFU9024NPBF - Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

SC11062

Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

INFINEON

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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- - - - 3Pins - - 150°C - - -
MJE15031.
MJE15031. - Transistor, TO220

SC01309

Transistor, TO220

MULTICOMP PRO

• No. of Pins : 3Pins • Operating Temperature Max : 150°C

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- - - - 3Pins - - 150°C - - -
IRF9530NPBF
IRF9530NPBF - Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

SC08220

Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF9530NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well ...

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- - - - 3Pins - - 175°C - HEXFET Series -
RFP50N06
RFP50N06 - Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

SC08222

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

ONSEMI

The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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- - - - 3Pins - - 175°C - - -
BZX79-C13.
BZX79-C13. - Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05706

Zener Single Diode, 13 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Diode Case Style : DO-35 • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - DO-35 2Pins - - 200°C - BZX79 -
GBU4J-E3/45
GBU4J-E3/45 - Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

SC07499

Bridge Rectifier, Single Phase, 600 V, 4 A, GBU, 4 Pins, 1 V

VISHAY

The GBU4J-E3/45 is a 4-pin single-phase glass passivated Bridge Rectifier Diode with high surge current capability. It is used in general purpose AC/DC bridge full wave rectification for monitor, TV, printer, adapter, audio equipment and home appliances ap...

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600V 4A - - 4Pins 1V 150A 150°C - - -
2N3906
2N3906 - Transistor, PNP, TO92

SC08424

Transistor, PNP, TO92

MULTICOMP PRO

The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Collector emitter voltage (Vce) o...

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- - - - 3Pins - - 150°C - - -
BZT03C47-TR
BZT03C47-TR - Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07144

Zener Single Diode, 47 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

• BZT03 series zener diode with surge current specification in 2 pin SOD-57 package • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds • Suitable for medium power voltage regulators and medium power transient suppress...

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- - - SOD-57 2Pins - - 175°C Through Hole BZT03 Series AEC-Q101
UF5408.
UF5408. - Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

SCUF5408

Fast / Ultrafast Diode, 1 kV, 3 A, Single, 1.7 V, 75 ns, 150 A

VISHAY

• Repetitive Peak Reverse Voltage : 1kV • Average Forward Current : 3A • Diode Configuration : Single • Diode Case Style : DO-201AD • Forward Voltage Max : 1.7V • Forward Surge Current : 150A • Operating Temperature Max : 150°C • Product Range : UF540

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1kV 3A Single DO-201AD - 1.7V 150A 150°C - UF540 -