Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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BU406
BU406 - Transistor, NPN, TO220

SC06796

Transistor, NPN, TO220

MULTICOMP PRO

The BU406 is a NPN Power Transistor for horizontal deflection output stages of TV and CTV circuits. • High voltage • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low saturation voltage • Fast switching speed • Multicomp Pro products a...

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NPN 200V 7A 60W TO-220 Through Hole 3Pins 10MHz 30hFE 150°C Multicomp Pro Bipolar Power Transistors NPN -
ZVN3310F
ZVN3310F - Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

SC07001

Power MOSFET, N Channel, 100 V, 100 mA, 10 ohm, SOT-23, Surface Mount

DIODES INC.

The ZVN3310F is an N-channel Enhancement Mode MOSFET utilizes a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench techno...

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- - - 330mW SOT-23 Surface Mount 3Pins - - 150°C - -
IRF3205ZPBF
IRF3205ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 110 A, 6500 µohm, TO-220AB, Through Hole

SC11149

Power MOSFET, Automotive, N Channel, 55 V, 110 A, 6500 µohm, TO-220AB, Through Hole

INFINEON

The IRF3205ZPBF is a HEXFET® N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and i...

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- - - 170W - Through Hole 3Pins - - 175°C - -
BZX79-C3V0.
BZX79-C3V0. - Zener Single Diode, 3 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05690

Zener Single Diode, 3 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
IRF2907ZPBF
IRF2907ZPBF - Power MOSFET, N Channel, 75 V, 170 A, 4500 µohm, TO-220, Through Hole

SC08253

Power MOSFET, N Channel, 75 V, 170 A, 4500 µohm, TO-220, Through Hole

INFINEON

The IRF2907ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching spee...

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- - - 330W - Through Hole 3Pins - - 175°C - -
SR504
SR504 - Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV

SC07449

Schottky Rectifier, 40 V, 5 A, Single, DO-201AD, 2 Pins, 550 mV

TAIWAN SEMICONDUCTOR

The SR504 is a Schottky Barrier Rectifier with moulded plastic case and solderable axial-lead as per MIL- STD-202 standard. • Colour band denotes cathode end • Low forward voltage drop • High current capability • High reliability • High surge current capab...

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- - - - - - 2Pins - - 125°C SR5xx Series -
IRF3415PBF
IRF3415PBF - Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

SC11109

Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

INFINEON

The IRF3415PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, pr...

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- - - 150W - Through Hole 3Pins - - 175°C - -
SPW17N80C3
SPW17N80C3 - Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

SC11162

Power MOSFET, N Channel, 800 V, 17 A, 0.29 ohm, TO-247, Through Hole

INFINEON

The SPW17N80C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, extreme dv/dt rated and periodic avalanche rated. • ±20V Gate-source voltage • 260°C Soldering temperature

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- - - 208W TO-247 Through Hole 3Pins - - 150°C - -
BZX79-C7V5.
BZX79-C7V5. - Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05700

Zener Single Diode, 7.5 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
MBR1045G
MBR1045G - Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV

SC07390

Schottky Rectifier, 45 V, 10 A, Single, TO-220AC, 2 Pins, 570 mV

ONSEMI

The MBR1045G is a SWITCHMODE™ Power Schottky Barrier Rectifier with epoxy moulded case. • All external surfaces corrosion-resistant • Low forward voltage • Low power loss/high efficiency • UL94V-0 Flammability rating

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- - - - - - 2Pins - - 175°C - -
GBU6D-E3/45
GBU6D-E3/45 - Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V

SC07504

Bridge Rectifier, Single Phase, 200 V, 6 A, SIP, 4 Pins, 1 V

VISHAY

• No. of Pins : 4Pins • Operating Temperature Max : 150°C

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- - - - - - 4Pins - - 150°C - -
BZV85-C6V2
BZV85-C6V2 - Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

SC07091

Zener Single Diode, 6.2 V, 1 W, DO-41 (DO-204AL), 2 Pins, 200 °C

NXP

• Power Dissipation : 1W • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZV85

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- - - 1W - - 2Pins - - 200°C BZV85 -
HUF75339P3
HUF75339P3 - Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

SC12748

Power MOSFET, N Channel, 55 V, 75 A, 0.012 ohm, TO-220AB, Through Hole

ONSEMI

The HUF75339P3 is a 55V N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche...

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- - - 200W TO-220AB Through Hole 3Pins - - 175°C - -
GBU8D
GBU8D - Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V

SC07509

Bridge Rectifier, Single Phase, 200 V, 8 A, SIP, 4 Pins, 1 V

ONSEMI

The GBU8D is a Bridge Rectifier with moulded plastic construction and glass-passivated junction. This bridge rectifier is general usage and suitable for many different applications. • 140V Maximum RMS bridge input voltage • 16W Power dissipation • UL Certi...

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- - - - - - 4Pins - - 150°C GBU8D -
FZT653
FZT653 - Transistor, NPN, SOT223

SC10978

Transistor, NPN, SOT223

DIODES INC.

The FZT653 is a NPN High Performance Transistor with matte tin-plated terminals, UL94V-0-flame rated moulded plastic case, solderable terminals as per MIL-STD-202, method 208 standard. • Complement to FZT753 • Level-1 per J-STD-020 moisture sensitivity • G...

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NPN 100V 2A 2W SOT-223 Surface Mount 4Pins 175MHz 200hFE 150°C - -
IRF9520PBF
IRF9520PBF - Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

SC11123

Power MOSFET, P Channel, 100 V, 6 A, 0.6 ohm, TO-220AB, Through Hole

VISHAY

The IRF9520PBF is a -100V P-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout...

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- - - 40W TO-220AB Through Hole 3Pins - - 175°C - -
SMBT3904
SMBT3904 - Transistor, NPN, SOT23

SC10623

Transistor, NPN, SOT23

INFINEON

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 40V • Continuous Collector Current : 200mA • Power Dissipation : 330mW

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NPN 40V 200mA 330mW SOT-23 Surface Mount 3Pins 270MHz 100hFE 150°C - -
2N5551
2N5551 - Si-N 180V 0.6A 0.31W TO92 Q14 Transistor

SC06652

Si-N 180V 0.6A 0.31W TO92 Q14 Transistor

ONSEMI

The 2N5551 is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Collector to emitter breakdown voltage of 160V • Collector to emitter sat...

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NPN 160V 600mA 625mW - Through Hole 3Pins 150MHz 80hFE 150°C - -
ZVP3306A
ZVP3306A - Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

SC06975

Power MOSFET, P Channel, 60 V, 160 mA, 14 ohm, E-Line, Through Hole

DIODES INC.

ZVP3306A is a P-channel enhancement mode vertical DMOS FET. • Drain-source voltage is -60V • Continuous drain current at Tamb=25°C is -160mA • Pulsed drain current is -1.6A • Gate-source voltage is ±20V • Power dissipation at Tamb=25°C is 625mW • Drain-sou...

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- - - 625mW E-Line Through Hole 3Pins - - 150°C - -
2N2222A
2N2222A - Transistor, NPN, TO18

SC06714

Transistor, NPN, TO18

MULTICOMP PRO

Silicon planar NPN switching transistor for switching and linear application, DC and VHF amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would...

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NPN 40V 800mA 1.2W TO-18 Through Hole 3Pins 300MHz 100hFE 200°C - -
BZX79-C6V2.
BZX79-C6V2. - Zener Single Diode, 6.2 V, 500 mW, DO-35, 2 Pins, 200 °C

SC05698

Zener Single Diode, 6.2 V, 500 mW, DO-35, 2 Pins, 200 °C

NXP

• Power Dissipation : 500mW • No. of Pins : 2Pins • Operating Temperature Max : 200°C • Product Range : BZX79

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- - - 500mW - - 2Pins - - 200°C BZX79 -
BTA40-800B
BTA40-800B - Triac, 40A, 800V, RD-91

SC07594

Triac, 40A, 800V, RD-91

STMICROELECTRONICS

The BTA40-800B is a 3-pin Standard Insulated TRIAC for general purpose AC switching and can be used as ON/OFF function. The BTA series TRIAC provides voltage insulated tab by using an internal ceramic pad. • High commutation performance • Low thermal resis...

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- - - - - - 3Pins - - 125°C - -
IRF9Z24NPBF
IRF9Z24NPBF - Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

SC11122

Power MOSFET, P Channel, 55 V, 12 A, 0.175 ohm, TO-220AB, Through Hole

INFINEON

The IRF9Z24NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...

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- - - 45W - Through Hole 3Pins - - 175°C - -
MBR10100G
MBR10100G - Schottky Rectifier, 100 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

SC07389

Schottky Rectifier, 100 V, 10 A, Single, TO-220AC, 2 Pins, 800 mV

ONSEMI

The MBR10100G is a Switch-mode Schottky Power Rectifier with epoxy moulded case and all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The power rectifier features guard-ring for stress protection, low stored charge...

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- - - - - - 2Pins - - 175°C - -
MJ15025G
MJ15025G - Transistor, PNP, TO3

SC06787

Transistor, PNP, TO3

ONSEMI

The MJ15025G is a -250V Silicon PNP Bipolar Power Transistor designed for high power audio, disk head positioners and other linear applications. • High DC current gain • High safe operating area • Collector-base voltage (Vcbo = 400V) • Emitter-base voltage...

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PNP 250V 16A 250W TO-3 Through Hole 2Pins 4MHz 60hFE 200°C - -