Transistor Circuits
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Transistor Circuits
Displaying products for Transistor Circuits - from our range of leading brand manufacturers.
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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WCS102
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SC16676 |
26 Piece 555 Timer, Op Amps and Darlington Transistor Kit WHADDA This set includes NE555 timers, LM324 amplifiers, 8-bit shift registers, quadruple bus buffer gates, L293D motor drivers and ULN2003 & ULN2803 darlington transistor arrays. • 4x Timer NE555 • 4x Low power quad operational amplifier LM324 • 4x 8-Bit shift r...
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MJE3055T
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SC15821 |
Bipolar (BJT) Single Transistor, NPN, 60V, 10A, 75W, TO-220 STMICROELECTRONICS The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses. • Complementa...
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MJ15016G
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SC09270 |
Transistor, PNP, TO3 ONSEMI The MJ15016G is a -120V Silicon PNP Bipolar Complementary High Power Transistor designed for high power audio, disk head positioners and other linear applications. The transistor can also be used in power switching circuits such as relay or solenoid driver...
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MRF300AN
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SC15950 |
RF FET Transistor, 133V, 272W, 1.8MHz, 250MHz, TO-247 NXP These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications and HF and VHF communications as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and...
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- | MRF300AN; MRF300BN | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BD139
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SC09455 |
Transistor, NPN, TO126 STMICROELECTRONICS The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. • Products are pre-selected in DC current gain • Collecto...
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BF256B
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SC15912 |
JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92 ONSEMI The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation
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ZTX450
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SC10969 |
Transistor, NPN, E-Line DIODES INC. ZTX450 is a through hole, NPN silicon planar medium power transistor in E-Line (TO-92 Compatible) package. • Collector to emitter voltage (Vce) of 45V • Collector to base voltage of 60V • Power dissipation (Pd) of 1W • Continuous collector current of 1A • ...
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TIP31C
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SC06756 |
Transistor, NPN, TO220 MULTICOMP PRO The TIP31C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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- | Bipolar Single Transistor, NPN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IHW30N160R5XKSA1
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SC15923 |
IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247 INFINEON IHW30N160R5XKSA1 is a reverse-conducting IGBT with monolithic body diode. Applications include induction cooking and microwave ovens. • Collector-emitter voltage is 1600V, DC collector current is 39A(Tc = 100°C ) • Powerful monolithic body diode with low f...
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J113
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SC08140 |
JFET Transistor, -35 V, -3 V, TO-92, 3 Pin, 150 °C ONSEMI The J113 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage o...
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6SCQ1
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HK01314 |
Replacement PNP Transistor Module SNAP CIRCUITS A Snap Circuit module for use with all Snap Circuit kits. It enables you to expand your circuit or to replace a lost part.
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- | Snap Circuits Modules | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF100B201
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SC16963 |
Power MOSFET, N Channel, 100 V, 192 A, 4200 µohm, TO-220AB, Through Hole INFINEON HEXFET® power MOSFET suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redunda...
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- | StrongIRFET, HEXFET | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP102G
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SC06859 |
Darlington Transistor, TO220 ONSEMI The TIP102G is a 8A NPN bipolar power Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Complementary device • Monolithic construction with built-in base-emitter shunt resistors
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J111
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SC12586 |
JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C ONSEMI The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation
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BC237B
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SC09155 |
Transistor, NPN, TO92 MULTICOMP PRO The BC237B is a NPN silicon planar Epitaxial Transistor, best suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders, Hi-Fi amplifiers, signal processing circuits of television receivers. • 375°C/W Junction to Ambient...
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BC549C
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SC12757 |
Transistor, NPN, TO92 MULTICOMP PRO The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...
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- | Multicomp Pro Bipolar Transistor | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J112
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SC05830 |
JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C ONSEMI J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...
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FGH30S130P
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SC15922 |
IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247 ONSEMI
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IKW40N120H3FKSA1
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SC15918 |
IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247 INFINEON The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switch...
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TIP126
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SC21403 |
Darlington Transistor, Darlington, PNP, 80 V, 65 W, 5 A, TO-220, 3 Pins MULTICOMP PRO The TIP126 is a -80V PNP Darlington Transistor designed for general purpose amplifier and low speed switching applications. • Monolithic construction with built-in base-emitter shunt resistors • Collector-emitter sustaining voltage (Vceo (sus) = 80V minimu...
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MJ15003G
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SC15816 |
Bipolar (BJT) Single Transistor, Audio, NPN, 140V, 20A, 250W, TO-3 ONSEMI The MJ15003G is a Power Transistor designed for high power audio, disk head positioners and other linear applications. High safe operating area and high DC current gain. Ideal for low distortion complementary designs. • 140VDC Collector-base voltage • 0.70...
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BC182L
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SC12579 |
Transistor, NPN, TO92 MULTICOMP PRO The BC182L is a NPN Silicon planar Epitaxial Transistor for amplifiers. • 375°C/W Junction to Ambient Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of custome...
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- | Multicomp Pro Bipolar Transistors | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC557B
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SC09156 |
Transistor, PNP, 45V, 100mA, TO92 MULTICOMP PRO The BC557B is a PNP silicon planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction ...
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BD135
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SC09460 |
Transistor, NPN, TO126 CDIL
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TIP35C
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SC06791 |
Transistor, NPN, TO247, 100V, 3MHz, 125W, 25A STMICROELECTRONICS The TIP35C from STMicroelectronics is a through hole complementary power transistor in TO-247 package. This device manufactured in planar technology with “base island” layout resulting in exceptional high gain performance coupled with very low saturation v...
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