Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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2N7002NXBKR
2N7002NXBKR - Power MOSFET, Trench, N Channel, 60V, 270mA, 2.2 Ohm, SOT-23, SMD

SC15955

Power MOSFET, Trench, N Channel, 60V, 270mA, 2.2 Ohm, SOT-23, SMD

NEXPERIA

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ES2B
ES2B - Fast / Ultrafast Diode, 100 V, 2 A, Single, 900 mV, 20 ns, 50 A

SC17747

Fast / Ultrafast Diode, 100 V, 2 A, Single, 900 mV, 20 ns, 50 A

ONSEMI

The ES2B is a surface-mount Ultra-fast Recovery Rectifier with glass-passivated junction. • Colour band denotes cathode • Low-profile package • Built-in strain-relief • Superfast recovery time for high-efficiency

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BZT03C27-TR
BZT03C27-TR - Zener Single Diode, 27 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

SC07138

Zener Single Diode, 27 V, 3.25 W, SOD-57, 2 Pins, 175 °C, Through Hole

VISHAY

The BZT03 series Zener Diode with glass passivated junction and hermetically sealed package. It is used in medium power voltage regulators and medium power transient suppression circuits. • Clamping time in picoseconds • UL94V-0 Moulding compound flammabil...

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SR140
SR140 - Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

SC15243

Schottky Rectifier, 40 V, 1 A, Single, DO-41 (DO-204AL), 2 Pins, 550 mV

MULTICOMP PRO

• Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a friend

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IRFP4468PBF
IRFP4468PBF - Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

SC15830

Power MOSFET, N Channel, 100V, 290A, 0.002 ohm, TO-247AC,

INFINEON

The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible...

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BAT54S-7-F
BAT54S-7-F - Small Signal Schottky Diode, Dual Series, 30 V, 100 mA, 800 mV, 600 mA, 150 °C

SC17579

Small Signal Schottky Diode, Dual Series, 30 V, 100 mA, 800 mV, 600 mA, 150 °C

DIODES INC.

The BAT54S-7-F is a surface mount Schottky Barrier Diode with matte tin finish annealed over alloy 42 lead frame (lead-free plating) terminals and UL94V-0 flame-rated moulded plastic case. It offers low turn-on voltage and fast switching capability, design...

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RB751V40T1G
RB751V40T1G - Small Signal Schottky Diode, Single, 30 V, 30 mA, 370 mV, 500 mA, 150 °C

SC17512

Small Signal Schottky Diode, Single, 30 V, 30 mA, 370 mV, 500 mA, 150 °C

ONSEMI

The RB751V40T1G is a Schottky Barrier Diode designed for high speed switching applications, circuit protection and voltage clamping. It features extremely low forward voltage reduces conduction loss. This miniature surface mount package is excellent for ha...

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BCX19
BCX19 - Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 250 mW, SOT-23, Surface Mount

SC21380

Bipolar (BJT) Single Transistor, NPN, 45 V, 500 mA, 250 mW, SOT-23, Surface Mount

MULTICOMP PRO

BCX19 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. With a collector-emitter voltage rating of 45V and a maximum collector current of 500 mA, this transistor offers reliab...

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BAV199E6327HTSA1
BAV199E6327HTSA1 - Small Signal Diode, Dual Series, 85 V, 200 mA, 1.25 V, 1.5 µs, 4.5 A

SC11237

Small Signal Diode, Dual Series, 85 V, 200 mA, 1.25 V, 1.5 µs, 4.5 A

INFINEON

The BAV199 from Infineon is surface mount, dual Isolated, silicon low leakage diode in SOT-23 package. These diodes are featured with medium speed switching, applicable at low leakage and switching applications. • Automotive grade AEC-Q101 qualified • Maxi...

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VN10LF
VN10LF - SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

SC16910

SMD N Channel Power MOSFET, 60V, 150mA, 5 Ohm, SOT 23

DIODES INC.

VN10LF is a N-channel enhancement mode vertical DMOS FET. • Drain-source voltage is 60V • Continuous drain current at Tamb=25°C is 150mA • Pulsed drain current is 3A • Gate source voltage is ±20V • Power dissipation at Tamb=25°C is 330mW • Static drain sou...

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S8025LTP
S8025LTP - Thyristor, 800V, 35mA, 16A, 25A, TO-220AB, 3 Pins

SC17060

Thyristor, 800V, 35mA, 16A, 25A, TO-220AB, 3 Pins

LITTELFUSE

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STPS1L30U
STPS1L30U - Schottky Rectifier, 30 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 300 mV

SC17522

Schottky Rectifier, 30 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 300 mV

STMICROELECTRONICS

The STPS1L30U is a low drop power single Schottky Rectifier Diode for switched mode power supplies and high frequency DC to DC converters, freewheel diode and integrated circuit latch up protection. • Very Low Forward Voltage Drop for Less Power Dissipatio...

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BSS138NH6327XTSA2
BSS138NH6327XTSA2 - Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

SC15994

Power MOSFET, N Channel, 60V, 230mA, 2.2 Ohm, SOT-23, SMD

INFINEON

• 60V, 0.23A, N-channel SIPMOS® small signal transistor in 3 pin SOT-23 package • Enhancement mode • Logic level • dv/dt rated • Qualified according to AEC Q101

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BC857A,215
BC857A,215 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC16044

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

BC857A,215 is a BC857 series PNP general purpose transistor suitable for use with general purpose switching and amplification. • 100mA max low current • 65V max low voltage • 250 hFE at VCE = 5V; IC = 2mA • Collector-base voltage (VCBO) is -50V at open emi...

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2N7000BU
2N7000BU - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole

SC16840

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole

ONSEMI

The 2N7000BU is an advanced small-signal N-channel enhancement-mode MOSFET produced using high cell density DMOS technology. It minimizes ON-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applicatio...

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NSR20F30NXT5G
NSR20F30NXT5G - Small Signal Schottky Diode, Single, 30 V, 2 A, 480 mV, 28 A, 150 °C

SC21485

Small Signal Schottky Diode, Single, 30 V, 2 A, 480 mV, 28 A, 150 °C

ONSEMI

The NSR20F30NXT5G is a Schottky Barrier Diode. It is optimized for low forward voltage drop and low leakage current and are offered in a chip scale package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging ta...

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BZX84-C2V7,215
BZX84-C2V7,215 - Zener Single Diode, 2.7 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

SC17888

Zener Single Diode, 2.7 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

NEXPERIA

The BZX84 series low-power voltage regulator Zener Diode encapsulated in a small SOT23 (TO-236AB) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±1%, ±2% and ±5% Three tolerance series • 2.4 to 75V (E24 ran...

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MMBT2222ALT1G
MMBT2222ALT1G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

SC16021

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40V, 600mA, 225mW, SOT-23, SMD

ONSEMI

The MMBT2222ALT1G is a NPN silicon Bipolar Transistor, designed for use in linear, lower power surface mount and switching applications. • Halogen-free/BFR-free • AEC-Q101 Qualified and PPAP Capable

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2N7002BKVL
2N7002BKVL - Power MOSFET, N Channel, 60 V, 350 mA, 1.6 ohm, TO-236AB, Surface Mount

SC16816

Power MOSFET, N Channel, 60 V, 350 mA, 1.6 ohm, TO-236AB, Surface Mount

NEXPERIA

• Suitable for Relay driver, High-speed line driver, Low-side loadswitch and switching circuits applications • Logic-level compatible • Very fast switching • Trench MOSFET technology • ESD protection up to 2kV • AEC-Q101 qualified

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STPS5L60S
STPS5L60S - Schottky Rectifier, 60 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 520 mV

SC17617

Schottky Rectifier, 60 V, 5 A, Single, DO-214AB (SMC), 2 Pins, 520 mV

STMICROELECTRONICS

The STPS5L60S is a power Schottky Rectifier Diode for switch mode power supplies and high frequency inverters. This device is intended for use in low voltage output for small battery chargers and consumer SMPS such as DVD and set-top-box. • Low Thermal Res...

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BAS16XV2T1G
BAS16XV2T1G - Small Signal Diode, Single, 100 V, 150 mA, 1.25 V, 6 ns, 500 mA

SC17806

Small Signal Diode, Single, 100 V, 150 mA, 1.25 V, 6 ns, 500 mA

ONSEMI

The BAS16XV2T1G is a small signal Switching Diode with 100% matte Sn (tin)-plated lead terminals. It is designed for high speed switching. • 100V Continuous reverse voltage • 260°C Qualified reflow temperature • AEC-Q101 qualified and PPAP capable • Pb-fre...

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BU426A
BU426A - Transistor, NPN, TO218

SC06797

Transistor, NPN, TO218

MULTICOMP PRO

The BU426A is a NPN Fast Switching High Voltage Transistor more specially intended for operating in colour TV supply systems. • Collector-emitter sustaining voltage (Vceo (sus) = 400V minimum) • Low collector-emitter saturation voltage • High voltage power...

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2N7002NXAKR
2N7002NXAKR - Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

SC15954

Power MOSFET, Trench, N Channel, 60V, 190mA, 3 Ohm, TO-236AB, SMD

NEXPERIA

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FQT7N10LTF
FQT7N10LTF - Power MOSFET, N Channel, 100 V, 1.7 A, 0.35 ohm, SOT-223, Surface Mount

SC16853

Power MOSFET, N Channel, 100 V, 1.7 A, 0.35 ohm, SOT-223, Surface Mount

ONSEMI

The FQT7N10LTF is a N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalan...

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BS107P
BS107P - N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

SC16884

N Channel Power MOSFET, 200V, 120mA, 30 Ohm, E-Line

DIODES INC.

• Case: E-Line (TO-92 Compatible) • Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Rating 94V-0

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