Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Price Ex. VAT (Inc. VAT)
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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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BC108C
BC108C - Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18

SC15810

Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18

MULTICOMP PRO

The BC108C is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...

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NPN 25V 200mA 600mW TO-18 Through Hole 3Pins 150MHz 420hFE 200°C - -
BC557B
BC557B - Transistor, PNP, 45V, 100mA, TO92

SC09156

Transistor, PNP, 45V, 100mA, TO92

MULTICOMP PRO

The BC557B is a PNP silicon planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction ...

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PNP 45V 100mA 500mW TO-92 Through Hole 3Pins 150MHz 200hFE 150°C - -
2N3904
2N3904 - Transistor, NPN, TO92

SC10960

Transistor, NPN, TO92

ONSEMI

The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....

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NPN 40V 200mA 625mW TO-92 Through Hole 3Pins - 100hFE 150°C - -
2N3904
2N3904 - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15978

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

MULTICOMP PRO

The 2N3904 from Multicomp Pro is a through hole, NPN silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence is suitable for switching and amplification. • Co...

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NPN 40V 200mA 1.5W TO-92 Through Hole 3Pins 300MHz 100hFE 150°C - -
BC547B
BC547B - Transistor, NPN, TO92

SC08525

Transistor, NPN, TO92

ONSEMI

The BC547B is a through hole, NPN epitaxial silicon transistor in TO-92 package. This device is designed for switching and amplification. • Collector to emitter breakdown voltage of 45V • Collector to emitter saturation voltage of 250mV • Power dissipation...

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NPN 45V 100mA 1.5W - Through Hole 3Pins - 200hFE - - -
2N3704.
2N3704. - Transistor, NPN TO92

SC06650

Transistor, NPN TO92

MULTICOMP PRO

• Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 999A • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • No. of Pins : 3Pins

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NPN 30V 999A - TO-92 Through Hole 3Pins - - - - -
BC33725TA
BC33725TA - Transistor, Bipolar, NPN, 45V, TO92

SC13989

Transistor, Bipolar, NPN, 45V, TO92

ONSEMI

The BC33725TA is a NPN Epitaxial Silicon Transistor, designed for use in general purpose amplifiers and switches applications. • 200°C/W Thermal Resistance, Junction-to-Ambient • Complement to BC327

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NPN 45V 800mA 625mW - Through Hole 3Pins - 400hFE - - -
1N4007-T
1N4007-T - Standard Recovery Diode, 1 kV, 1 A, Single, 1 V, 30 A

SC14911

Standard Recovery Diode, 1 kV, 1 A, Single, 1 V, 30 A

DIODES INC.

The 1N4007-T is a Rectifier Diode with moulded plastic case. The rectifier diode has high current capability and low forward voltage drop. • Diffused Junction • High Current Capability and Low Forward Voltage Drop • Low Reverse Leakage Current

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- - - - - - 2Pins - - 150°C 1N4007 -
SI2319CDS-T1-GE3
SI2319CDS-T1-GE3 - Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount

SC16704

Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount

VISHAY

The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage

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- - - 1.25W SOT-23 Surface Mount 3Pins - - 150°C - -
BC32725TA
BC32725TA - Bipolar (BJT) Single Transistor, Small Signal, PNP, -45V, -800mA, 625mW, TO-92

SC15770

Bipolar (BJT) Single Transistor, Small Signal, PNP, -45V, -800mA, 625mW, TO-92

ONSEMI

The BC32725TA is a -45V PNP Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. It is complement to BC337/BC338 transistors. This product is general usage and suitable for many different applications. • -5V Emitter to base voltag...

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PNP 45V 800mA 625mW TO-92 Through Hole 3Pins 100MHz 100hFE 150°C - -
MBR140SFT1G
MBR140SFT1G - Schottky Rectifier, 40 V, 1 A, Single, SOD-123FL, 2 Pins, 550 mV

SC17495

Schottky Rectifier, 40 V, 1 A, Single, SOD-123FL, 2 Pins, 550 mV

ONSEMI

The MBR140SFT1G is a surface mount Schottky Power Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. This device uses the Schottky barrier principle with a large area metal-to-si...

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- - - - - - 2Pins - - 125°C MBR14 AEC-Q101
DFLS240L-7
DFLS240L-7 - Schottky Rectifier, POWERDI®, 40 V, 2 A, Single, PowerDI 123, 2 Pins, 500 mV

SC17543

Schottky Rectifier, POWERDI®, 40 V, 2 A, Single, PowerDI 123, 2 Pins, 500 mV

DIODES INC.

The DFLS240L-7 is a low VF Schottky barrier Rectifier Diode with guard ring die construction for transient protection, matte tin annealed over copper lead-frame terminals, UL94V-0 flame-rated moulded plastic case and cathode band terminal connections. Sold...

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- - - - - - 2Pins - - 125°C DFLS2 -
1SMA5927BT3G
1SMA5927BT3G - Zener Single Diode, 1SMA59xxB Series, 12 V, 1.5 W, DO-214AC (SMA), 2 Pins, 150 °C, Surface Mount

SC18007

Zener Single Diode, 1SMA59xxB Series, 12 V, 1.5 W, DO-214AC (SMA), 2 Pins, 150 °C, Surface Mount

ONSEMI

The 1SMA5927BT3G is a surface mount Voltage Regulator Zener Diode with void free transfer-moulded plastic case. All external surfaces are corrosion-resistant and leads are readily solderable. • ESD rating of Class 3 (<gt/>16kV) per human body model • Flat ...

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- - - 1.5W - - 2Pins - - 150°C 1SMA5927BT3 -
TIP120G
TIP120G - Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220

SC15979

Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220

ONSEMI

The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor

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NPN - - - TO-220 Through Hole 3Pins - - 150°C - AEC-Q101
1N4007GP-E3/54
1N4007GP-E3/54 - Standard Recovery Diode, 1 kV, 1 A, Single, 1.1 V, 2 µs, 30 A

SC17860

Standard Recovery Diode, 1 kV, 1 A, Single, 1.1 V, 2 µs, 30 A

VISHAY

The 1N4007GP-E3/54 is a glass passivated junction plastic Rectifier Diode with matte tin-plated leads terminals, UL94V-0 flame-rated moulded epoxy over glass body and colour band denotes cathode end polarity. Superectifier structure for high reliability ap...

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- - - - - - 2Pins - - 175°C SUPERECTIFIER Series -
MBR1H100SFT3G
MBR1H100SFT3G - Schottky Rectifier, 100 V, 1 A, Single, SOD-123FL, 2 Pins, 760 mV

SC17640

Schottky Rectifier, 100 V, 1 A, Single, SOD-123FL, 2 Pins, 760 mV

ONSEMI

• No. of Pins : 2Pins • Operating Temperature Max : 175°C • Product Range : MBR1H • Qualification : AEC-Q101

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- - - - - - 2Pins - - 175°C MBR1H AEC-Q101
BAV99W,115
BAV99W,115 - Small Signal Diode, Dual Series, 100 V, 150 mA, 1.25 V, 4 ns, 4 A

SC17720

Small Signal Diode, Dual Series, 100 V, 150 mA, 1.25 V, 4 ns, 4 A

NEXPERIA

The BAV99 series from NXP are surface mount high speed switching diode. These diodes are featured with dual, quadruple series of configuration and achieves high current conductivity in small package. It is mainly used for reverse polarity protection, high ...

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- - - - - - 3Pins - - 150°C BAV99 AEC-Q101
BSS123,215
BSS123,215 - Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

SC19225

Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

NEXPERIA

The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...

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- - - 250mW SOT-23 Surface Mount 3Pins - - 150°C - -
SI2319DS-T1-E3
SI2319DS-T1-E3 - Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

SC19376

Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

VISHAY

The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...

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- - - 750mW TO-236 Surface Mount 3Pins - - 150°C - -
1N4448TR
1N4448TR - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

SC19269

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

ONSEMI

The 1N4448 is a high conductance fast small Signal Diode. This small signal diode is general usage and suitable for many different applications. • 500mW Power dissipation • 300?C/W Junction-to-ambient thermal resistance

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- - - - - - 2Pins - - 175°C - -
1N5819HW-7-F
1N5819HW-7-F - Schottky Rectifier, 40V, 1A, SOD-123, 2 Pins, 750mV,

SC19197

Schottky Rectifier, 40V, 1A, SOD-123, 2 Pins, 750mV,

MULTICOMP PRO

• For Use in Low Voltage, High Frequency Inverters • Free Wheeling and Polarity Protection Applications

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- - - - - - 2Pins - - 125°C - -
FDLL4148
FDLL4148 - Small Signal Diode, Single, 100V, 200mA, 1V, 4ns, 4A

SC19270

Small Signal Diode, Single, 100V, 200mA, 1V, 4ns, 4A

ONSEMI

• Non repetitive peak forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operating junction temperature range from -55°C to 175°C • Reverse recovery time of 4...

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- - - - - - 2Pins - - 175°C FDLL4x48 Series -
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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- - - 3.3W SOT-23 Surface Mount 3Pins - - 175°C TrenchFET AEC-Q101
GF1M-E3/67A
GF1M-E3/67A - Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A

SC19379

Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A

VISHAY

The GF1M-E3/5CA from Vishay is an single configured surface mount glass passivated rectifier in DO-214BA package. It features low forward voltage drop, low leakage current, high forward surge capability. Applicable at general purpose rectification of power...

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- - - - - - 2Pins - - 175°C SUPERECTIFIER Series -
P600MG
P600MG - Standard Recovery  Rectifier Diode, 1kV, 6A, 1.1V, 250A

SC18687

Standard Recovery Rectifier Diode, 1kV, 6A, 1.1V, 250A

MULTICOMP PRO

The P600MG from Multicomp Pro is a standard recovery / rectifier diode designed for general purpose and low power applications. • Low cost • Low reverse leakage current • Low forward voltage drop • High surge capacity • Meet UL flammability classification ...

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- - - - - - 2Pins - - 150°C - -