Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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2N3055
2N3055 - Transistor, NPN, TO3

SC06768

Transistor, NPN, TO3

MULTICOMP PRO

Silicon planar NPN transistor designed for general purpose switching and amplifier applications. • Multicomp Pro products are rated 4.6 out of 5 stars • 12-month limited warranty *view Terms & Conditions for details • 96% of customers would recommend to a ...

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2N3906
2N3906 - Transistor, PNP, TO92

SC08424

Transistor, PNP, TO92

MULTICOMP PRO

The 2N3906 from Multicomp Pro is a through hole, PNP low power, silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, hence is suitable for switching and amplification. • Continuous collector current (Ic)...

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1N4007-T
1N4007-T - Standard Recovery Diode, 1 kV, 1 A, Single, 1 V, 30 A

SC14911

Standard Recovery Diode, 1 kV, 1 A, Single, 1 V, 30 A

DIODES INC.

The 1N4007-T is a Rectifier Diode with moulded plastic case. The rectifier diode has high current capability and low forward voltage drop. • Diffused Junction • High Current Capability and Low Forward Voltage Drop • Low Reverse Leakage Current

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BC547B
BC547B - Transistor, NPN, TO92

SC08525

Transistor, NPN, TO92

ONSEMI

The BC547B is a through hole, NPN epitaxial silicon transistor in TO-92 package. This device is designed for switching and amplification. • Collector to emitter breakdown voltage of 45V • Collector to emitter saturation voltage of 250mV • Power dissipation...

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1N4148 (DO-35)
1N4148 (DO-35) - Small Signal Diode, Single, 100 V, 150 mA, 1 V, 4 ns, 2 A

SC15554

Small Signal Diode, Single, 100 V, 150 mA, 1 V, 4 ns, 2 A

MULTICOMP PRO

Small signal diode in DO-35 package suitable for general purpose applications. • High speed silicon switching diodes, axial leaded • Hermetically sealed glass with stud on either side of glass passivated chip • Extremely low leakage and very high reliabili...

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SB5100
SB5100 - Schottky Rectifier Diode,100V, 5A, DO-201AD

SC14889

Schottky Rectifier Diode,100V, 5A, DO-201AD

ONSEMI

The SB5100 is a Schottky Barrier Rectifier Diode for low voltage/high frequency inverters, freewheeling and polarity protection applications. • Metal to Silicon Rectifier, Majority Carrier Conduction • Low Power Loss • High Efficiency • High Current Capabi...

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1N4148
1N4148 - Small Signal Diode, 100 V, 150 mA, 1 V

SC07296

Small Signal Diode, 100 V, 150 mA, 1 V

MULTICOMP PRO

Forward Current If(AV):150mA; Forward Voltage VF Max:1V; No. of Pins:2Pins; Repetitive Reverse Voltage Vrrm Max:100V; Current Ifrm:200mA; Current Ifsm:500mA; Device Marking:1N4148; Peak F

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1N4001-E3/54
1N4001-E3/54 - Standard Recovery Diode, 50 V, 1 A, Single, 1.1 V, 30 A

SC17841

 
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Data Sheet
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Standard Recovery Diode, 50 V, 1 A, Single, 1.1 V, 30 A

VISHAY

The 1N4001-E3/54 is a general purpose Plastic Rectifier with matte tin-plated lead and an UL94V-0 flammability-rated molded epoxy body. It is suitable for use in general purpose rectification. • Low forward voltage drop • Low leakage current • High forward...

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FQP30N06
FQP30N06 - Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

SC16931

Power MOSFET, N Channel, 60 V, 30 A, 0.031 ohm, TO-220AB, Through Hole

ONSEMI

The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performanc...

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ULN2803A
ULN2803A - Darlington Array 8 NPN, 2803, DIP18

SC08607

Darlington Array 8 NPN, 2803, DIP18

STMICROELECTRONICS

The ULN2803A is an eight darlington array in 18 pin DIP package. Array contains eight darlington transistors with common emitters and integral suppression diodes for inductive loads. Each darlington features a peak load current rating of 600mA (500mA conti...

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FDP7030BL
FDP7030BL - Power MOSFET, N Channel, 30 V, 60 A, 0.009 ohm, TO-220, Through Hole

SC11135

Power MOSFET, N Channel, 30 V, 60 A, 0.009 ohm, TO-220, Through Hole

ONSEMI

The FDP7030BL is a 30V N-channel logic level PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power s...

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2N3904
2N3904 - Transistor, NPN, TO92

SC10960

Transistor, NPN, TO92

ONSEMI

The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....

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2N3904
2N3904 - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

SC15978

 
New product
Data Sheet
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RoHS

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92

MULTICOMP PRO

The 2N3904 from Multicomp Pro is a through hole, NPN silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence is suitable for switching and amplification. • Co...

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MMBT3904WT1G
MMBT3904WT1G - Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD

SC16072

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 150mW, SOT-323, SMD

ONSEMI

The MMBT3904WT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications. • AEC-Q101 qualified and PPAP capable • Low RDS (ON) provides higher e...

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BC109
BC109 - Transistor, NPN, TO18

SC06717

Transistor, NPN, TO18

MULTICOMP PRO

The BC109 from Multicomp Pro are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification. • Collector emitter voltage (Vce) of 25V • Continuous collector current (Ic)...

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BC557BTA
BC557BTA - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

SC15808

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 500mW, TO-92

ONSEMI

The BC557BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • Complement to BC547

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BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ONSEMI

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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2N2222
2N2222 - Transistor, NPN, TO18

SC06697

Transistor, NPN, TO18

MULTICOMP PRO

The 2N2222 from Multicomp Pro is a through hole, low power bipolar transistor in TO-18 metal can package. This NPN silicon planar switching transistor is used for switching, linear DC power supply and VHF amplifier applications. • Collector emitter breakdo...

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BC63916-D27Z
BC63916-D27Z - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 830mW, TO-226AA

SC15791

 
New product
Data Sheet
+
RoHS

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 830mW, TO-226AA

ONSEMI

The BC63916_D27Z is a NPN Epitaxial Silicon Transistor designed for use in switching and amplifier applications. • -55 to 150°C Operating junction temperature range

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BC549C
BC549C - Transistor, NPN, TO92

SC12757

Transistor, NPN, TO92

MULTICOMP PRO

The BC549C from Multicomp Pro are through hole, NPN silicon planar epitaxial general purpose transistor in TO-92 metal can package. This device is typically used in driver stages of audio amplifiers, tape recorders, low noise input stages, Hi-Fi amplifiers...

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ZTX753.
ZTX753. - PNP 120V 2A 1W

SCZTX753

PNP 120V 2A 1W

DIODES INC.

Automotive Qualification Standard:-; Collector Emitter Voltage V(br)ceo:100V; DC Collector Current:-2A; DC Current Gain hFE:100hFE; MSL:-; No. of Pins:3Pins; Operating Temperature Max:200°C; Power Dissip

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KBPC5010
KBPC5010 - Bridge Rectifier Diode, Single Phase, 1kV, 50A, Module, 1.1V

SC15167

Bridge Rectifier Diode, Single Phase, 1kV, 50A, Module, 1.1V

MULTICOMP PRO

The KBPC5010 from Multicomp Pro is a glass passivated bridge rectifier with solderable 0.25" FAST ON terminals. The rectifier bridge consists of four silicon junctions connected as a full bridge. It has electrically isolated base -2000volts for maximum hea...

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BD139-10
BD139-10 - Bipolar Transistor, NPN, 80V, 1.5A, TO-126

SC15373

Bipolar Transistor, NPN, 80V, 1.5A, TO-126

MULTICOMP PRO

The BD139-10 is a NPN Transistor with 80V collector-emitter voltage and 12.5W power dissipation. • Collector-base voltage(Vcbo = 100V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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2N3773
2N3773 - Transistor, NPN, TO3

SC06772

Transistor, NPN, TO3

MULTICOMP PRO

The 2N3773 from Multicomp Pro is a through hole, NPN transistors in TO-3 metal can package. Typical applications are high power audio, disk head positioners, power switching circuits such as relay or solenoid drivers, DC-DC converters and inverters. • Coll...

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IRFZ44NPBF
IRFZ44NPBF - Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

SC08251

Power MOSFET, N Channel, 55 V, 41 A, 0.0175 ohm, TO-220AB, Through Hole

INFINEON

The IRFZ44NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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