Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC108C
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SC15810 |
Bipolar (BJT) Single Transistor, NPN, 25V, 200mA, 600mW, TO-18 MULTICOMP PRO The BC108C is a 25V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. • Low power • Collector-base voltage(Vcbo = 30V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars...
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NPN | 25V | 200mA | 600mW | TO-18 | Through Hole | 3Pins | 150MHz | 420hFE | 200°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC557B
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SC09156 |
Transistor, PNP, 45V, 100mA, TO92 MULTICOMP PRO The BC557B is a PNP silicon planar Epitaxial Transistor, suitable for use in driver and output stages of audio amplifier, low noise input stages of tape recorders, Hi-Fi amplifiers and signal processing circuits of television receivers. • 250°C/W Junction ...
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PNP | 45V | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 150MHz | 200hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904
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SC10960 |
Transistor, NPN, TO92 ONSEMI The 2N3904 from Fairchild is a through hole, NPN general purpose transistor in TO-92 package which is designed for amplifier and switch application. The dynamic range of device extends to 100mA while operating as switch and it will be 100MHz for amplifier....
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NPN | 40V | 200mA | 625mW | TO-92 | Through Hole | 3Pins | - | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3904
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SC15978 |
Bipolar (BJT) Single Transistor, NPN, 40V, 200mA, 625mW, TO-92 MULTICOMP PRO The 2N3904 from Multicomp Pro is a through hole, NPN silicon planar switching transistors in TO-92 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence is suitable for switching and amplification. • Co...
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NPN | 40V | 200mA | 1.5W | TO-92 | Through Hole | 3Pins | 300MHz | 100hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC547B
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SC08525 |
Transistor, NPN, TO92 ONSEMI The BC547B is a through hole, NPN epitaxial silicon transistor in TO-92 package. This device is designed for switching and amplification. • Collector to emitter breakdown voltage of 45V • Collector to emitter saturation voltage of 250mV • Power dissipation...
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NPN | 45V | 100mA | 1.5W | - | Through Hole | 3Pins | - | 200hFE | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N3704.
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SC06650 |
Transistor, NPN TO92 MULTICOMP PRO • Transistor Polarity : NPN • Collector Emitter Voltage Max : 30V • Continuous Collector Current : 999A • Transistor Case Style : TO-92 • Transistor Mounting : Through Hole • No. of Pins : 3Pins
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NPN | 30V | 999A | - | TO-92 | Through Hole | 3Pins | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC33725TA
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SC13989 |
Transistor, Bipolar, NPN, 45V, TO92 ONSEMI The BC33725TA is a NPN Epitaxial Silicon Transistor, designed for use in general purpose amplifiers and switches applications. • 200°C/W Thermal Resistance, Junction-to-Ambient • Complement to BC327
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NPN | 45V | 800mA | 625mW | - | Through Hole | 3Pins | - | 400hFE | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4007-T
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SC14911 |
Standard Recovery Diode, 1 kV, 1 A, Single, 1 V, 30 A DIODES INC. The 1N4007-T is a Rectifier Diode with moulded plastic case. The rectifier diode has high current capability and low forward voltage drop. • Diffused Junction • High Current Capability and Low Forward Voltage Drop • Low Reverse Leakage Current
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- | - | - | - | - | - | 2Pins | - | - | 150°C | 1N4007 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319CDS-T1-GE3
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SC16704 |
Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount VISHAY The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage
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- | - | - | 1.25W | SOT-23 | Surface Mount | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC32725TA
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SC15770 |
Bipolar (BJT) Single Transistor, Small Signal, PNP, -45V, -800mA, 625mW, TO-92 ONSEMI The BC32725TA is a -45V PNP Epitaxial Silicon Transistor for AF-Driver stages and low power output stages. It is complement to BC337/BC338 transistors. This product is general usage and suitable for many different applications. • -5V Emitter to base voltag...
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PNP | 45V | 800mA | 625mW | TO-92 | Through Hole | 3Pins | 100MHz | 100hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR140SFT1G
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SC17495 |
Schottky Rectifier, 40 V, 1 A, Single, SOD-123FL, 2 Pins, 550 mV ONSEMI The MBR140SFT1G is a surface mount Schottky Power Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. This device uses the Schottky barrier principle with a large area metal-to-si...
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- | - | - | - | - | - | 2Pins | - | - | 125°C | MBR14 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DFLS240L-7
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SC17543 |
Schottky Rectifier, POWERDI®, 40 V, 2 A, Single, PowerDI 123, 2 Pins, 500 mV DIODES INC. The DFLS240L-7 is a low VF Schottky barrier Rectifier Diode with guard ring die construction for transient protection, matte tin annealed over copper lead-frame terminals, UL94V-0 flame-rated moulded plastic case and cathode band terminal connections. Sold...
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- | - | - | - | - | - | 2Pins | - | - | 125°C | DFLS2 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1SMA5927BT3G
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SC18007 |
Zener Single Diode, 1SMA59xxB Series, 12 V, 1.5 W, DO-214AC (SMA), 2 Pins, 150 °C, Surface Mount ONSEMI The 1SMA5927BT3G is a surface mount Voltage Regulator Zener Diode with void free transfer-moulded plastic case. All external surfaces are corrosion-resistant and leads are readily solderable. • ESD rating of Class 3 (<gt/>16kV) per human body model • Flat ...
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- | - | - | 1.5W | - | - | 2Pins | - | - | 150°C | 1SMA5927BT3 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP120G
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SC15979 |
Bipolar (BJT) Single Transistor, NPN, 60V, 5A, 65W, TO-220 ONSEMI The TIP120G is a NPN Darlington bipolar Power Transistor, designed for general purpose amplifier and low-speed switching applications. • High DC current gain • Monolithic construction with built-in base-emitter shunt resistor
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NPN | - | - | - | TO-220 | Through Hole | 3Pins | - | - | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4007GP-E3/54
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SC17860 |
Standard Recovery Diode, 1 kV, 1 A, Single, 1.1 V, 2 µs, 30 A VISHAY The 1N4007GP-E3/54 is a glass passivated junction plastic Rectifier Diode with matte tin-plated leads terminals, UL94V-0 flame-rated moulded epoxy over glass body and colour band denotes cathode end polarity. Superectifier structure for high reliability ap...
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- | - | - | - | - | - | 2Pins | - | - | 175°C | SUPERECTIFIER Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR1H100SFT3G
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SC17640 |
Schottky Rectifier, 100 V, 1 A, Single, SOD-123FL, 2 Pins, 760 mV ONSEMI • No. of Pins : 2Pins • Operating Temperature Max : 175°C • Product Range : MBR1H • Qualification : AEC-Q101
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- | - | - | - | - | - | 2Pins | - | - | 175°C | MBR1H | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAV99W,115
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SC17720 |
Small Signal Diode, Dual Series, 100 V, 150 mA, 1.25 V, 4 ns, 4 A NEXPERIA The BAV99 series from NXP are surface mount high speed switching diode. These diodes are featured with dual, quadruple series of configuration and achieves high current conductivity in small package. It is mainly used for reverse polarity protection, high ...
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- | - | - | - | - | - | 3Pins | - | - | 150°C | BAV99 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS123,215
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SC19225 |
Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD NEXPERIA The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...
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- | - | - | 250mW | SOT-23 | Surface Mount | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI2319DS-T1-E3
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SC19376 |
Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD VISHAY The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...
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- | - | - | 750mW | TO-236 | Surface Mount | 3Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N4448TR
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SC19269 |
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A ONSEMI The 1N4448 is a high conductance fast small Signal Diode. This small signal diode is general usage and suitable for many different applications. • 500mW Power dissipation • 300?C/W Junction-to-ambient thermal resistance
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- | - | - | - | - | - | 2Pins | - | - | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5819HW-7-F
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SC19197 |
Schottky Rectifier, 40V, 1A, SOD-123, 2 Pins, 750mV, MULTICOMP PRO • For Use in Low Voltage, High Frequency Inverters • Free Wheeling and Polarity Protection Applications
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- | - | - | - | - | - | 2Pins | - | - | 125°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDLL4148
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SC19270 |
Small Signal Diode, Single, 100V, 200mA, 1V, 4ns, 4A ONSEMI • Non repetitive peak forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operating junction temperature range from -55°C to 175°C • Reverse recovery time of 4...
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- | - | - | - | - | - | 2Pins | - | - | 175°C | FDLL4x48 Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2362ES-T1_GE3
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SC19375 |
Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD VISHAY • TrenchFET® power MOSFET • 100% Rg and UIS tested
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- | - | - | 3.3W | SOT-23 | Surface Mount | 3Pins | - | - | 175°C | TrenchFET | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GF1M-E3/67A
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SC19379 |
Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A VISHAY The GF1M-E3/5CA from Vishay is an single configured surface mount glass passivated rectifier in DO-214BA package. It features low forward voltage drop, low leakage current, high forward surge capability. Applicable at general purpose rectification of power...
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- | - | - | - | - | - | 2Pins | - | - | 175°C | SUPERECTIFIER Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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P600MG
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SC18687 |
Standard Recovery Rectifier Diode, 1kV, 6A, 1.1V, 250A MULTICOMP PRO The P600MG from Multicomp Pro is a standard recovery / rectifier diode designed for general purpose and low power applications. • Low cost • Low reverse leakage current • Low forward voltage drop • High surge capacity • Meet UL flammability classification ...
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- | - | - | - | - | - | 2Pins | - | - | 150°C | - | - |