Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Diode Configuration | Repetitive Peak Reverse Voltage | Average Forward Current | Forward Voltage Max | Forward Surge Current | Operating Temperature Max | Diode Case Style | No. of Pins | Reverse Recovery Time | Diode Mounting | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BAS70-04-7-F
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SC19121 |
SMD Small Signal Schottky Barrier Diode, 70V, 15mA, 1V, 100mA DIODES INC. The BAS70-04-7-F is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals and PN junction guard ring for transient and ESD protection. • Low turn-on v...
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Dual Series | 70V | 15mA | 1V | 100mA | 125°C | SOT-23 | 3Pins | 5ns | Surface Mount | BAS70 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
KSC1845FTA
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SC19265 |
Bipolar (BJT) Single Transistor, NPN, 120V, 50mA, 500mW, TO-226AA ONSEMI The KSC1845FTA is a NPN Epitaxial Silicon Transistor offers 120V collector base voltage and 50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSA992
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT760-7
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SC19119 |
Schottky Rectifier, 30 V, 1 A, Single, SOD-323, 2 Pins, 550 mV DIODES INC. The BAT760-7 is a surface-mount Schottky Barrier Rectifier with moulded plastic case and solderable matte tin-finish annealed over alloy 42 lead frame terminals as per MIL-STD-202 standard. • Very low forward-voltage drop • Guard-ring construction for tran...
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Single | 30V | 1A | 550mV | 5.5A | 125°C | SOD-323 | 2Pins | - | Surface Mount | BAT760 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSH103,215
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SC19198 |
Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD NEXPERIA The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4448TR
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SC19269 |
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A ONSEMI The 1N4448 is a high conductance fast small Signal Diode. This small signal diode is general usage and suitable for many different applications. • 500mW Power dissipation • 300?C/W Junction-to-ambient thermal resistance
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Single | 100V | 200mA | 1V | 4A | 175°C | DO-204AH | 2Pins | 4ns | Through Hole | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZX84C10LT1G
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SC19253 |
Zener Single Diode, Voltage Regulator, 10V, 225mW, SOT-23, 6%, 3 Pins, 150°C ONSEMI The BZX84CxxxLT1G series surface mount Zener Diode designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables and high density PC boards. • 225mW Rating on FR-4 ...
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- | - | - | - | - | 150°C | SOT-23 | 3Pins | - | Surface Mount | BZX84CxxxLT1G | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847B
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SC19196 |
Bipolar (BJT) Single Transistor, NPN, 45V, 100mA, 250mW, SOT-23, SMD MULTICOMP PRO The BC847B is a NPN surface mount silicon planar Epitaxial Transistor. Collector emitter voltage at 45V and power dissipation at 250mW. • 500k/W Junction-to-ambient thermal resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | Multicomp Pro Bipolar Transistors NPN | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N5404RL
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SC14891 |
Standard Recovery Diode, 400V, 3 A, ONSEMI The 1N5404RL is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications. • Cathode is indicated by polarity band • High current to small size • High surge current...
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Single | 400V | 3A | 1V | 200A | 150°C | DO-201AD | 2Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP3203N3-G
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SC16929 |
Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF256B
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SC15912 |
JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92 ONSEMI The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation
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- | - | - | - | - | 150°C | - | - | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR360G
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SC17643 |
Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV ONSEMI The MBR360G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silic...
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Single | 60V | 3A | 740mV | 80A | 150°C | Axial Leaded | 2Pins | - | Through Hole | MBR36 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STPS0520Z
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SC17520 |
Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV STMICROELECTRONICS The STPS0520Z is a single Schottky Rectifier suitable for switch mode power supplies and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Due t...
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Single | 20V | 500mA | 320mV | 5.5A | 125°C | SOD-123 | 2Pins | - | Surface Mount | STPS0 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF510PBF
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SC15755 |
Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB VISHAY The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP260NPBF
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SC16898 |
N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC INFINEON The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4171PT1G
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SC16782 |
Power MOSFET, P Channel, 30 V, 3.5 A, 0.05 ohm, SOT-23, Surface Mount ONSEMI The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD243C
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SC15745 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220 MULTICOMP PRO The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | Multicomp Pro Bipolar NPN Transistors | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS308PEH6327XTSA1
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SC16736 |
Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount INFINEON The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV304P
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SC16761 |
Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount ONSEMI The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MB6S-E3/45
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SC17440 |
Bridge Rectifier Diode, Single Phase, 600V, 500mA, TO-269AA, 1V, 4 Pins VISHAY The MB6S-E3/45 is a miniature glass passivated surface mount Bridge Rectifier. • Fast Recovery • Saves Space on Printed Circuit Boards • High Surge Current Capability • Matte Tin-plated Leads
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- | 600V | 500mA | 1V | 35A | 150°C | - | 4Pins | - | - | MB6S | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF520NPBF
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SC08214 |
Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...
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- | - | - | - | - | 175°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N914
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SC08157 |
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A ONSEMI The 1N914 is an axial leaded small signal diode. This diode features unidirectional configuration. • Forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operati...
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Single | 100V | 200mA | 1V | 4A | 175°C | DO-35 (DO-204AH) | 2Pins | 4ns | Through Hole | 1N91x Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J111
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SC12586 |
JFET Transistor, TO-92, 150 °C ONSEMI The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J112
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SC05830 |
JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C ONSEMI J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...
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TIP42A
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SC06766 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • -65 to 150°C Operating junction temperature range • Multicomp Pro products ...
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP3306F
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SC16881 |
SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23 DIODES INC. The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.
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- | - | - | - | - | 150°C | - | 3Pins | - | - | - | - |