Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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N Channel 60V 4.3A 0.068ohm SOT-23 Surface Mount 10V 2V 3.3W 3Pins 175°C TrenchFET AEC-Q101
BSH103,215
BSH103,215 - Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

SC19198

Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

NEXPERIA

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...

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N Channel 30V 850mA 0.4ohm TO-236AB Surface Mount 4.5V 400mV 750mW 3Pins 150°C - -
BAT6404E6327HTSA1
BAT6404E6327HTSA1 - Small Signal Schottky Diode, Single Pair Series, 40V, 120mA, 750mV, 800mA, 150 °C

SC19132

Small Signal Schottky Diode, Single Pair Series, 40V, 120mA, 750mV, 800mA, 150 °C

INFINEON

Silicon Schottky diode for low-loss, fast-recovery, meter protection, bias isolation and clamping application. • Qualified according AEC Q101 • Integrated diffused guard ring • Low forward voltage • Series pin configuration

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- - - - - - - - - 3Pins 150°C BAT64 AEC-Q101
1N4448TR
1N4448TR - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

SC19269

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

ONSEMI

The 1N4448 is a high conductance fast small Signal Diode. This small signal diode is general usage and suitable for many different applications. • 500mW Power dissipation • 300?C/W Junction-to-ambient thermal resistance

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- - - - - - - - - 2Pins 175°C - -
1N5404RL
1N5404RL - Standard Recovery Diode, 400V, 3 A,

SC14891

Standard Recovery Diode, 400V, 3 A,

ONSEMI

The 1N5404RL is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications. • Cathode is indicated by polarity band • High current to small size • High surge current...

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- - - - - - - - - 2Pins 150°C - -
MB6S-E3/45
MB6S-E3/45 - Bridge Rectifier Diode, Single Phase, 600V, 500mA, TO-269AA, 1V, 4 Pins

SC17440

Bridge Rectifier Diode, Single Phase, 600V, 500mA, TO-269AA, 1V, 4 Pins

VISHAY

The MB6S-E3/45 is a miniature glass passivated surface mount Bridge Rectifier. • Fast Recovery • Saves Space on Printed Circuit Boards • High Surge Current Capability • Matte Tin-plated Leads

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- - - - - - - - - 4Pins 150°C MB6S -
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...

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N Channel 650V 20.7A 0.19ohm TO-247 Through Hole 10V 3V 208W 3Pins 150°C - -
BF256B
BF256B - JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92

SC15912

JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92

ONSEMI

BF256B is an N-channel JFET RF amplifier. • Total device dissipation at TA = 25°C is 350mW • Gate−source breakdown voltage is -30V min at VDS = 0, IG = 1µA • Gate−source voltage is -7.5V max at VDS = 15V, ID = 200µA • Gate−source cut−off voltage is -8.0V m...

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N Channel - - - TO-92 Through Hole - - - - 150°C - -
IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

SC15755

Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...

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N Channel 100V 5.6A 0.54ohm TO-220AB Through Hole 10V 4V 43W 3Pins 175°C - -
IRFP260NPBF
IRFP260NPBF - N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

SC16898

N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

INFINEON

The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...

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N Channel 200V 50A 0.04ohm TO-247AC Through Hole 10V 4V 300W 3Pins 175°C HEXFET Series -
FDV304P
FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount

SC16761

Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount

ONSEMI

The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....

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P Channel 25V 460mA 1.1ohm SOT-23 Surface Mount 2.7V 860mV 350mW 3Pins 150°C - -
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC16736

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

INFINEON

The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection

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P Channel 30V 2A 0.08ohm SOT-23 Surface Mount 10V 1.5V 500mW 3Pins 150°C - AEC-Q101
VP3203N3-G
VP3203N3-G - Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

SC16929

Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel 30V 650mA 0.6ohm TO-92 Through Hole 10V 3.5V 740mW 3Pins 150°C - -
MBR360G
MBR360G - Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV

SC17643

Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV

ONSEMI

The MBR360G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silic...

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- - - - - - - - - 2Pins 150°C MBR36 -
BD243C
BD243C - Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220

SC15745

Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220

MULTICOMP PRO

The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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- - - - TO-220 Through Hole - - 65W 3Pins 150°C Multicomp Pro Bipolar NPN Transistors -
STPS0520Z
STPS0520Z - Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV

SC17520

Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV

STMICROELECTRONICS

The STPS0520Z is a single Schottky Rectifier suitable for switch mode power supplies and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Due t...

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- - - - - - - - - 2Pins 125°C STPS0 -
NTR4171PT1G
NTR4171PT1G - Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount

SC16782

Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...

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P Channel 30V 3.5A 0.075ohm SOT-23 Surface Mount 10V 1.15V 1.25W 3Pins 150°C - -
IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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N Channel 100V 9.7A 0.2ohm - Through Hole 10V 4V 47W 3Pins 175°C - -
J111
J111 - JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C

SC12586

JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C

ONSEMI

The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation

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N Channel - - - TO-92 Through Hole - - - 3Pins 150°C - -
TIP42A
TIP42A - Transistor, PNP, TO220

SC06766

Transistor, PNP, TO220

MULTICOMP PRO

The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • -65 to 150°C Operating junction temperature range • Multicomp Pro products ...

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- - - - TO-220 Through Hole - - 65W 3Pins 150°C - -
1N914
1N914 - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

SC08157

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

ONSEMI

The 1N914 is an axial leaded small signal diode. This diode features unidirectional configuration. • Forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operati...

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- - - - - - - - - 2Pins 175°C 1N91x Series -
J112
J112 - JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C

SC05830

JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C

ONSEMI

J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...

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N Channel - - - TO-92 Through Hole - - - - 150°C - -
STD30NF06LT4
STD30NF06LT4 - Power MOSFET, N Channel, 60 V, 35 A, 0.028 ohm, TO-252 (DPAK), Surface Mount

SC16912

Power MOSFET, N Channel, 60 V, 35 A, 0.028 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...

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N Channel 60V 35A 0.028ohm TO-252 (DPAK) Surface Mount 2.5V 1.7V 70W 3Pins 175°C - -
ZVP3306F
ZVP3306F - SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

SC16881

SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

DIODES INC.

The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.

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P Channel 60V 90mA 14ohm SOT-23 Surface Mount 10V 3.5V 330mW 3Pins 150°C - -
B130-13-F
B130-13-F - Schottky Rectifier, 30 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV

SC17578

Schottky Rectifier, 30 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV

DIODES INC.

The B130-13-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and lead-free solderable matte tin-finish as per MIL-STD-202 terminals. It is suitable for use in low-voltage, high-frequency inverters, free-wheeling and polarity protec...

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- - - - - - - - - 2Pins 150°C B130 -