Discrete Semiconductors
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Discrete Semiconductors
Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.
| Electrical Transformers | Crystals & Oscillators | Resistors | Capacitors | IC Semiconductors |
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Channel Type | Drain Source Voltage Vds | Continuous Drain Current Id | Drain Source On State Resistance | Transistor Case Style | Transistor Mounting | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | No. of Pins | Operating Temperature Max | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SQ2362ES-T1_GE3
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SC19375 |
Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD VISHAY • TrenchFET® power MOSFET • 100% Rg and UIS tested
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N Channel | 60V | 4.3A | 0.068ohm | SOT-23 | Surface Mount | 10V | 2V | 3.3W | 3Pins | 175°C | TrenchFET | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSH103,215
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SC19198 |
Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD NEXPERIA The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...
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N Channel | 30V | 850mA | 0.4ohm | TO-236AB | Surface Mount | 4.5V | 400mV | 750mW | 3Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAT6404E6327HTSA1
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SC19132 |
Small Signal Schottky Diode, Single Pair Series, 40V, 120mA, 750mV, 800mA, 150 °C INFINEON Silicon Schottky diode for low-loss, fast-recovery, meter protection, bias isolation and clamping application. • Qualified according AEC Q101 • Integrated diffused guard ring • Low forward voltage • Series pin configuration
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- | - | - | - | - | - | - | - | - | 3Pins | 150°C | BAT64 | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N4448TR
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SC19269 |
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A ONSEMI The 1N4448 is a high conductance fast small Signal Diode. This small signal diode is general usage and suitable for many different applications. • 500mW Power dissipation • 300?C/W Junction-to-ambient thermal resistance
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- | - | - | - | - | - | - | - | - | 2Pins | 175°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1N5404RL
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SC14891 |
Standard Recovery Diode, 400V, 3 A, ONSEMI The 1N5404RL is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications. • Cathode is indicated by polarity band • High current to small size • High surge current...
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MB6S-E3/45
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SC17440 |
Bridge Rectifier Diode, Single Phase, 600V, 500mA, TO-269AA, 1V, 4 Pins VISHAY The MB6S-E3/45 is a miniature glass passivated surface mount Bridge Rectifier. • Fast Recovery • Saves Space on Printed Circuit Boards • High Surge Current Capability • Matte Tin-plated Leads
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- | - | - | - | - | - | - | - | - | 4Pins | 150°C | MB6S | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SPW20N60C3FKSA1
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SC16942 |
Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole INFINEON The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...
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N Channel | 650V | 20.7A | 0.19ohm | TO-247 | Through Hole | 10V | 3V | 208W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BF256B
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SC15912 |
JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92 ONSEMI BF256B is an N-channel JFET RF amplifier. • Total device dissipation at TA = 25°C is 350mW • Gate−source breakdown voltage is -30V min at VDS = 0, IG = 1µA • Gate−source voltage is -7.5V max at VDS = 15V, ID = 200µA • Gate−source cut−off voltage is -8.0V m...
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N Channel | - | - | - | TO-92 | Through Hole | - | - | - | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF510PBF
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SC15755 |
Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB VISHAY The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...
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N Channel | 100V | 5.6A | 0.54ohm | TO-220AB | Through Hole | 10V | 4V | 43W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRFP260NPBF
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SC16898 |
N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC INFINEON The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...
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N Channel | 200V | 50A | 0.04ohm | TO-247AC | Through Hole | 10V | 4V | 300W | 3Pins | 175°C | HEXFET Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDV304P
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SC16761 |
Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount ONSEMI The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....
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P Channel | 25V | 460mA | 1.1ohm | SOT-23 | Surface Mount | 2.7V | 860mV | 350mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BSS308PEH6327XTSA1
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SC16736 |
Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount INFINEON The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection
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P Channel | 30V | 2A | 0.08ohm | SOT-23 | Surface Mount | 10V | 1.5V | 500mW | 3Pins | 150°C | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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VP3203N3-G
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SC16929 |
Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole MICROCHIP This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...
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P Channel | 30V | 650mA | 0.6ohm | TO-92 | Through Hole | 10V | 3.5V | 740mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR360G
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SC17643 |
Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV ONSEMI The MBR360G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silic...
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | MBR36 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BD243C
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SC15745 |
Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220 MULTICOMP PRO The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...
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- | - | - | - | TO-220 | Through Hole | - | - | 65W | 3Pins | 150°C | Multicomp Pro Bipolar NPN Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STPS0520Z
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SC17520 |
Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV STMICROELECTRONICS The STPS0520Z is a single Schottky Rectifier suitable for switch mode power supplies and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Due t...
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- | - | - | - | - | - | - | - | - | 2Pins | 125°C | STPS0 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTR4171PT1G
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SC16782 |
Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount ONSEMI The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...
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P Channel | 30V | 3.5A | 0.075ohm | SOT-23 | Surface Mount | 10V | 1.15V | 1.25W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF520NPBF
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SC08214 |
Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole INFINEON The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...
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N Channel | 100V | 9.7A | 0.2ohm | - | Through Hole | 10V | 4V | 47W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J111
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SC12586 |
JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C ONSEMI The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation
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N Channel | - | - | - | TO-92 | Through Hole | - | - | - | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP42A
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SC06766 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • -65 to 150°C Operating junction temperature range • Multicomp Pro products ...
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- | - | - | - | TO-220 | Through Hole | - | - | 65W | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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1N914
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SC08157 |
Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A ONSEMI The 1N914 is an axial leaded small signal diode. This diode features unidirectional configuration. • Forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operati...
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- | - | - | - | - | - | - | - | - | 2Pins | 175°C | 1N91x Series | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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J112
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SC05830 |
JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C ONSEMI J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...
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N Channel | - | - | - | TO-92 | Through Hole | - | - | - | - | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STD30NF06LT4
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SC16912 |
Power MOSFET, N Channel, 60 V, 35 A, 0.028 ohm, TO-252 (DPAK), Surface Mount STMICROELECTRONICS The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps a...
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N Channel | 60V | 35A | 0.028ohm | TO-252 (DPAK) | Surface Mount | 2.5V | 1.7V | 70W | 3Pins | 175°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ZVP3306F
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SC16881 |
SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23 DIODES INC. The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.
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P Channel | 60V | 90mA | 14ohm | SOT-23 | Surface Mount | 10V | 3.5V | 330mW | 3Pins | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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B130-13-F
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SC17578 |
Schottky Rectifier, 30 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV DIODES INC. The B130-13-F is a surface-mount Schottky Barrier Rectifier with moulded plastic case and lead-free solderable matte tin-finish as per MIL-STD-202 terminals. It is suitable for use in low-voltage, high-frequency inverters, free-wheeling and polarity protec...
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- | - | - | - | - | - | - | - | - | 2Pins | 150°C | B130 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



























