Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Diode Configuration Repetitive Peak Reverse Voltage Average Forward Current Forward Voltage Max Reverse Recovery Time Forward Surge Current Operating Temperature Max Diode Case Style No. of Pins Diode Mounting Product Range Qualification
 
 
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1N4448TR
1N4448TR - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

SC19269

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

ONSEMI

The 1N4448 is a high conductance fast small Signal Diode. This small signal diode is general usage and suitable for many different applications. • 500mW Power dissipation • 300?C/W Junction-to-ambient thermal resistance

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Single 100V 200mA 1V 4ns 4A 175°C DO-204AH 2Pins Through Hole - -
KSC1845FTA
KSC1845FTA - Bipolar (BJT) Single Transistor, NPN, 120V, 50mA, 500mW, TO-226AA

SC19265

Bipolar (BJT) Single Transistor, NPN, 120V, 50mA, 500mW, TO-226AA

ONSEMI

The KSC1845FTA is a NPN Epitaxial Silicon Transistor offers 120V collector base voltage and 50mA collector current. It is suitable for audio frequency low-noise amplifier applications. • Complement to KSA992

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- - - - - - 150°C - 3Pins - - -
GF1M-E3/67A
GF1M-E3/67A - Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A

SC19379

Standard Recovery Diode, 1kV, 1A, Single, 1.2V, 2us, 30A

VISHAY

The GF1M-E3/5CA from Vishay is an single configured surface mount glass passivated rectifier in DO-214BA package. It features low forward voltage drop, low leakage current, high forward surge capability. Applicable at general purpose rectification of power...

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Single 1kV 1A 1.2V 2µs 30A 175°C DO-214BA 2Pins - SUPERECTIFIER Series -
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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- - - - - - 175°C - 3Pins - TrenchFET AEC-Q101
1N5404RL
1N5404RL - Standard Recovery Diode, 400V, 3 A,

SC14891

Standard Recovery Diode, 400V, 3 A,

ONSEMI

The 1N5404RL is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications. • Cathode is indicated by polarity band • High current to small size • High surge current...

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Single 400V 3A 1V - 200A 150°C DO-201AD 2Pins - - -
VP3203N3-G
VP3203N3-G - Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

SC16929

Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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- - - - - - 150°C - 3Pins - - -
BF256B
BF256B - JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92

SC15912

JFET Transistor, JFET, -30V, 6mA, 13mA, -8 V, TO-92

ONSEMI

The BF256B is a N-channel JFET Transistor for RF/VHF/UHF amplifiers. • 350mW Power Dissipation

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- - - - - - 150°C - - - - -
MBR360G
MBR360G - Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV

SC17643

Schottky Rectifier, 60 V, 3 A, Single, Axial Leaded, 2 Pins, 740 mV

ONSEMI

The MBR360G is an axial-leaded Schottky Barrier Rectifier with an epoxy molded case, all external surfaces corrosion-resistant and terminal lead is readily solderable finish. This device employs the Schottky barrier principle in a large area metal-to-silic...

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Single 60V 3A 740mV - 80A 150°C Axial Leaded 2Pins Through Hole MBR36 -
STPS0520Z
STPS0520Z - Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV

SC17520

Schottky Rectifier, 20 V, 500 mA, Single, SOD-123, 2 Pins, 320 mV

STMICROELECTRONICS

The STPS0520Z is a single Schottky Rectifier suitable for switch mode power supplies and high frequency DC to DC converters. This device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. Due t...

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Single 20V 500mA 320mV - 5.5A 125°C SOD-123 2Pins Surface Mount STPS0 -
IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

SC15755

Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...

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- - - - - - 175°C - 3Pins - - -
IRFP260NPBF
IRFP260NPBF - N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

SC16898

N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

INFINEON

The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...

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- - - - - - 175°C - 3Pins - HEXFET Series -
NTR4171PT1G
NTR4171PT1G - Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount

SC16782

Power MOSFET, P Channel, 30 V, 3.5 A, 0.075 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...

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- - - - - - 150°C - 3Pins - - -
FDV304P
FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount

SC16761

Power MOSFET, P Channel, 25 V, 460 mA, 1.1 ohm, SOT-23, Surface Mount

ONSEMI

The FDV303P is a surface mount, P channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions....

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- - - - - - 150°C - 3Pins - - -
BD243C
BD243C - Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220

SC15745

Bipolar (BJT) Single Transistor, NPN, 100V, 6A, 65W, TO-220

MULTICOMP PRO

The BD243C is a NPN plastic high power Bipolar Transistor, used for general purpose amplifier and switching applications. • 1.92°C/W Junction to Case Thermal Resistance • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month limited warranty *view...

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- - - - - - 150°C - 3Pins - Multicomp Pro Bipolar NPN Transistors -
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 - Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

SC16736

Power MOSFET, P Channel, 30 V, 2 A, 0.08 ohm, SOT-23, Surface Mount

INFINEON

The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection

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- - - - - - 150°C - 3Pins - - AEC-Q101
MB6S-E3/45
MB6S-E3/45 - Bridge Rectifier Diode, Single Phase, 600V, 500mA, TO-269AA, 1V, 4 Pins

SC17440

Bridge Rectifier Diode, Single Phase, 600V, 500mA, TO-269AA, 1V, 4 Pins

VISHAY

The MB6S-E3/45 is a miniature glass passivated surface mount Bridge Rectifier. • Fast Recovery • Saves Space on Printed Circuit Boards • High Surge Current Capability • Matte Tin-plated Leads

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- 600V 500mA 1V - 35A 150°C - 4Pins - MB6S -
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capability •...

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- - - - - - 150°C - 3Pins - - -
IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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- - - - - - 175°C - 3Pins - - -
1N914
1N914 - Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

SC08157

Small Signal Diode, Single, 100 V, 200 mA, 1 V, 4 ns, 4 A

ONSEMI

The 1N914 is an axial leaded small signal diode. This diode features unidirectional configuration. • Forward surge current of 4A at pulse width 1μs and 1A at pulse width 1s • Maximum repetitive reverse voltage of 100V • Power dissipation is 500mW • Operati...

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Single 100V 200mA 1V 4ns 4A 175°C DO-35 (DO-204AH) 2Pins Through Hole 1N91x Series -
J111
J111 - JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C

SC12586

JFET Transistor, 35 V, 20 mA, TO-92, 3 Pin, 150 °C

ONSEMI

The J111 is a N-channel Switch feature source and drain are interchangeable. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • 50mA Forward gate current • 625mW Total device dissipation

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- - - - - - 150°C - 3Pins - - -
J112
J112 - JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C

SC05830

JFET Transistor, -35 V, -5 V, TO-92, 3 Pin, 150 °C

ONSEMI

J112 is a through hole, N channel switch in TO-92 package. This device is designed for low level analogue switching, sample and hold circuits and chopper stabilized amplifiers. • Source and drain are interchangeable • Gate to source breakdown voltage of 35...

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TIP42A
TIP42A - Transistor, PNP, TO220

SC06766

Transistor, PNP, TO220

MULTICOMP PRO

The TIP42A is a PNP Power Transistor designed for use in general purpose power amplifier and switching applications. • 3MHz Minimum current gain-bandwidth product fT @ IC = 500mA • -65 to 150°C Operating junction temperature range • Multicomp Pro products ...

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- - - - - - 150°C - 3Pins - - -
IRFB3206PBF
IRFB3206PBF - Power MOSFET, N Channel, 60 V, 210 A, 3000 µohm, TO-220AB, Through Hole

SC17003

Power MOSFET, N Channel, 60 V, 210 A, 3000 µohm, TO-220AB, Through Hole

INFINEON

The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...

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- - - - - - 175°C - 3Pins - - -
ZVP3306F
ZVP3306F - SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

SC16881

SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

DIODES INC.

The ZVP3306F is a -60V E-Line P-channel Enhancement Mode Vertical DMOS FET with 14Ω resistance and 330mW power dissipation.

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- - - - - - 150°C - 3Pins - - -
1N4148WS-HE3-08
1N4148WS-HE3-08 - Small Signal Diode, Single, 100 V, 150 mA, 1.2 V, 4 ns, 350 mA

SC17832

Small Signal Diode, Single, 100 V, 150 mA, 1.2 V, 4 ns, 350 mA

VISHAY

• Small signal fast switching diode • AEC-Q101 qualified • Silicon epitaxial planar diode • Fast switching diodes

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Single 100V 150mA 1.2V 4ns 350mA 150°C SOD-323 2Pins Surface Mount - AEC-Q101