Pnp Transistors
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Pnp Transistors
Displaying products for Pnp Transistors - from our range of leading brand manufacturers.
Npn General Purpose Transistors |
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Transistor Polarity | Collector Emitter Voltage Max | Continuous Collector Current | Power Dissipation | Transistor Case Style | Transistor Mounting | No. of Pins | Transition Frequency | DC Current Gain hFE Min | Operating Temperature Max | Product Range | Qualification | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP32C
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SC06765 |
Transistor, PNP, TO220 MULTICOMP PRO The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...
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PNP | 100V | 3A | 40W | TO-220 | Through Hole | 3Pins | 3MHz | 10hFE | 150°C | Multicomp Pro PNP Transistors | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
D45H8G
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SC06761 |
Transistor, PNP, TO220 ONSEMI The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...
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PNP | 60V | 10A | 70W | TO-220 | Through Hole | 3Pins | 40MHz | 60hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC860C,215
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SC05788 |
Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850
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PNP | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 420hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC857B,215
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SC05786 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC857B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847
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PNP | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 220hFE | 150°C | BC857 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCW70,215
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SC05796 |
Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BCW70 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW71 and BCW72 • H2 Marking code
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PNP | 45V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 150hFE | 150°C | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT3906LT1G
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SC16069 |
Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD ONSEMI MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is -40VDC • Collector-base voltage is -40VDC • Collector current - continuous is -200mA DC • Total device dissipation is a 225mW • Junction and ...
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PNP | 40V | 200mA | 225mW | SOT-23 | Surface Mount | 3Pins | 250MHz | 300hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BW,115
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SC16039 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 200mW, SOT-323 NEXPERIA The BC856BW,115 is a PNP General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and amplification. • NPN complements are BC846W, BC847W and BC848W • 3B Marking code
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PNP | 65V | 100mA | 200mW | SOT-323 | Surface Mount | 3Pins | 100MHz | 220hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC859C,215
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SC16090 |
Bipolar (BJT) Single Transistor, PNP, 30V, 100mA, 250mW, SOT-23, SMD NEXPERIA The BC859C is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the low noise input stages of audio frequency equipment. • NPN complements are BC849 and BC850 • 4C Marking code
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PNP | 30V | 100mA | 250mW | SOT-23 | Surface Mount | 3Pins | - | 420hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5401-7-F
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SC15929 |
Bipolar (BJT) Single Transistor, PNP, -150V, -600mA, 310mW, SOT-23, SMD DIODES INC. MMBT5401-7-F is a PNP high-voltage transistor. • Epitaxial planar die construction • Complementary NPN type - MMBT5551 • Ideal for low-power amplification and switching • SOT23 package • Power dissipation is 310mW at TA = +25°C • Operating and storage temp...
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PNP | 150V | 600mA | 310mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 60hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA2222SG
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SC15938 |
Bipolar (BJT) Single Transistor, PNP, -50V, -10A, 25W, SC-67 ONSEMI • Transistor Polarity : PNP • Collector Emitter Voltage Max : 50V • Continuous Collector Current : 10A • Power Dissipation : 25W • Transistor Case Style : SC-67 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 230MHz • DC Current Gain hFE Min : 150hFE • Operating Temperature Max : 150°C
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PNP | 50V | 10A | 25W | SC-67 | Through Hole | 3Pins | 230MHz | 150hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC161-16
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SC15812 |
Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39 MULTICOMP PRO The BC161-16 is a -60V Silicon PNP Medium Power Transistor ideal for medium power amplifier and switching applications. • Collector-base voltage(Vcbo = 60V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month ...
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PNP | 60V | 1A | 800mW | TO-39 | Through Hole | 3Pins | 50MHz | 250hFE | 200°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCP53-16,115
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SC16029 |
Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD NEXPERIA The BCP53 series 1A PNP Medium Power Transistor with three current gain selections. It offers exposed heat-sink for excellent thermal and electrical conductivity. • High current • High power dissipation capability • Leadless very small SMD plastic package ...
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PNP | 80V | 1A | 650mW | SOT-223 | Surface Mount | 4Pins | 145MHz | 100hFE | 150°C | BCP53 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25
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SC16071 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD DIODES INC. The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...
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PNP | 45V | 500mA | 310mW | SOT-23 | Surface Mount | 3Pins | - | 160hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2SA1943OTU
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SC15776 |
Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264 ONSEMI The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315
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PNP | 250V | 17A | 150W | TO-264 | Through Hole | 3Pins | 30MHz | 80hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856ALT1G
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SC16053 |
Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23 ONSEMI The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable
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PNP | 65V | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MJD45H11G
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SC16105 |
Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD ONSEMI The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...
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PNP | 80V | 8A | 20W | TO-252 (DPAK) | Surface Mount | 3Pins | 90MHz | 60hFE | 150°C | - | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-25,215
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SC16016 |
Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD NEXPERIA The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance
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PNP | 45V | 500mA | 250mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 160hFE | 150°C | BC807 | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC857BLT1G
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SC16057 |
Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23 ONSEMI The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...
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PNP | 45V | 100mA | 225mW | SOT-23 | Surface Mount | 3Pins | 100MHz | 100hFE | 150°C | BCxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BPN,115
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SC16127 |
Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88 NEXPERIA The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...
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NPN, PNP | - | - | - | SC-88 | Surface Mount | 6Pins | - | - | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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2N6109
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SC15381 |
Bipolar Transistor, PNP, 50V, 7A, TO-220 MULTICOMP PRO The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...
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PNP | 50V | 7A | 40W | TO-220 | Through Hole | 3Pins | 10MHz | 30hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC556BTA
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SC15787 |
Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92 ONSEMI The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546
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PNP | 65V | 100mA | 500mW | TO-92 | Through Hole | 3Pins | 150MHz | 200hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MMBT5401LT1G
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SC16070 |
Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23 ONSEMI The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...
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PNP | 150V | 500mA | 225mW | SOT-23 | Surface Mount | 3Pins | 300MHz | 100hFE | 150°C | MMBTxxxx | AEC-Q101 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SS8550DBU
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SC15798 |
Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA ONSEMI The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050
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PNP | 25V | 1.5A | 1W | TO-226AA | Through Hole | 3Pins | 200MHz | 160hFE | 150°C | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BDW1T1G
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SC16138 |
Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363 ONSEMI The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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Dual PNP | - | - | - | SOT-363 | Surface Mount | 6Pins | - | - | 150°C | BCxxx Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC807-40LVL
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SC15934 |
Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD NEXPERIA • Transistor Polarity : PNP • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 80MHz • DC Current Gain hFE Min : 250hFE • Operating Temperature Max : 150°C • Product Range : BC807L • Qualification : AEC-Q101
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PNP | 45V | 500mA | 250mW | TO-236AB | Surface Mount | 3Pins | 80MHz | 250hFE | 150°C | BC807L | AEC-Q101 |