Pnp Transistors

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Pnp Transistors


Displaying products for Pnp Transistors - from our range of leading brand manufacturers.

Npn General Purpose Transistors
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  Manufacturer Part No Order Code Description / Manufacturer
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Transistor Polarity Collector Emitter Voltage Max Continuous Collector Current Power Dissipation Transistor Case Style Transistor Mounting No. of Pins Transition Frequency DC Current Gain hFE Min Operating Temperature Max Product Range Qualification
 
 
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TIP32C
TIP32C - Transistor, PNP, TO220

SC06765

Transistor, PNP, TO220

MULTICOMP PRO

The TIP32C is a high-performance transistor designed to handle high currents and voltages, making it an ideal choice for demanding applications such as audio amplifiers, power supplies, and switching circuits. With its high current handling capability and ...

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PNP 100V 3A 40W TO-220 Through Hole 3Pins 3MHz 10hFE 150°C Multicomp Pro PNP Transistors -
D45H8G
D45H8G - Transistor, PNP, TO220

SC06761

Transistor, PNP, TO220

ONSEMI

The D45H8G is a 10A PNP bipolar Power Transistor offers low collector-emitter saturation voltage. It can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters a...

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PNP 60V 10A 70W TO-220 Through Hole 3Pins 40MHz 60hFE 150°C - -
BC860C,215
BC860C,215 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC05788

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC860C is a PNP general purpose Transistor with 3 leads, low current and voltage, plastic surface mount package. Designed for low noise input stages of audio frequency equipment. • Complement to BC850

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PNP 45V 100mA 250mW SOT-23 Surface Mount 3Pins 100MHz 420hFE 150°C - -
BC857B,215
BC857B,215 - Bipolar (BJT) Single Transistor, General Purpose, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC05786

Bipolar (BJT) Single Transistor, General Purpose, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC857B,215 is a PNP Transistor in SMD plastic package with low current and voltage. Used for general purpose switching and amplification. • Complement to BC847

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PNP 45V 100mA 250mW SOT-23 Surface Mount 3Pins 100MHz 220hFE 150°C BC857 -
BCW70,215
BCW70,215 - Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

SC05796

Bipolar (BJT) Single Transistor, PNP, 45V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BCW70 is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with general purpose switching and amplification. • Low current • Low voltage • NPN complements are BCW71 and BCW72 • H2 Marking code

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PNP 45V 100mA 250mW SOT-23 Surface Mount 3Pins - 150hFE 150°C - -
MMBT3906LT1G
MMBT3906LT1G - Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD

SC16069

Bipolar (BJT) Single Transistor, General Purpose, PNP, 40V, 200mA, 225mW, SOT-23, SMD

ONSEMI

MMBT3906LT1G is a PNP silicon general purpose transistor in a 3 pin SOT-23 package. • Collector-emitter voltage is -40VDC • Collector-base voltage is -40VDC • Collector current - continuous is -200mA DC • Total device dissipation is a 225mW • Junction and ...

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PNP 40V 200mA 225mW SOT-23 Surface Mount 3Pins 250MHz 300hFE 150°C MMBTxxxx AEC-Q101
BC856BW,115
BC856BW,115 - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 200mW, SOT-323

SC16039

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 200mW, SOT-323

NEXPERIA

The BC856BW,115 is a PNP General Purpose Transistor in a plastic package. It is suitable for use with general purpose switching and amplification. • NPN complements are BC846W, BC847W and BC848W • 3B Marking code

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PNP 65V 100mA 200mW SOT-323 Surface Mount 3Pins 100MHz 220hFE 150°C - -
BC859C,215
BC859C,215 - Bipolar (BJT) Single Transistor, PNP, 30V, 100mA, 250mW, SOT-23, SMD

SC16090

Bipolar (BJT) Single Transistor, PNP, 30V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC859C is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the low noise input stages of audio frequency equipment. • NPN complements are BC849 and BC850 • 4C Marking code

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PNP 30V 100mA 250mW SOT-23 Surface Mount 3Pins - 420hFE 150°C - -
MMBT5401-7-F
MMBT5401-7-F - Bipolar (BJT) Single Transistor, PNP, -150V, -600mA, 310mW, SOT-23, SMD

SC15929

Bipolar (BJT) Single Transistor, PNP, -150V, -600mA, 310mW, SOT-23, SMD

DIODES INC.

MMBT5401-7-F is a PNP high-voltage transistor. • Epitaxial planar die construction • Complementary NPN type - MMBT5551 • Ideal for low-power amplification and switching • SOT23 package • Power dissipation is 310mW at TA = +25°C • Operating and storage temp...

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PNP 150V 600mA 310mW SOT-23 Surface Mount 3Pins 300MHz 60hFE 150°C - -
2SA2222SG
2SA2222SG - Bipolar (BJT) Single Transistor, PNP, -50V, -10A, 25W, SC-67

SC15938

Bipolar (BJT) Single Transistor, PNP, -50V, -10A, 25W, SC-67

ONSEMI

• Transistor Polarity : PNP • Collector Emitter Voltage Max : 50V • Continuous Collector Current : 10A • Power Dissipation : 25W • Transistor Case Style : SC-67 • Transistor Mounting : Through Hole • No. of Pins : 3Pins • Transition Frequency : 230MHz • DC Current Gain hFE Min : 150hFE • Operating Temperature Max : 150°C

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PNP 50V 10A 25W SC-67 Through Hole 3Pins 230MHz 150hFE 150°C - -
BC161-16
BC161-16 - Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39

SC15812

Bipolar (BJT) Single Transistor, PNP, 60V, 1A, 800mW, TO-39

MULTICOMP PRO

The BC161-16 is a -60V Silicon PNP Medium Power Transistor ideal for medium power amplifier and switching applications. • Collector-base voltage(Vcbo = 60V) • Emitter-base voltage(Vebo = 5V) • Multicomp Pro products are rated 4.6 out of 5 stars • 12 month ...

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PNP 60V 1A 800mW TO-39 Through Hole 3Pins 50MHz 250hFE 200°C - -
BCP53-16,115
BCP53-16,115 - Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD

SC16029

Bipolar (BJT) Single Transistor, PNP, -80V, -1A, 650mW, SOT-223, SMD

NEXPERIA

The BCP53 series 1A PNP Medium Power Transistor with three current gain selections. It offers exposed heat-sink for excellent thermal and electrical conductivity. • High current • High power dissipation capability • Leadless very small SMD plastic package ...

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PNP 80V 1A 650mW SOT-223 Surface Mount 4Pins 145MHz 100hFE 150°C BCP53 -
BC807-25
BC807-25 - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD

SC16071

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 310mW, SOT-23, SMD

DIODES INC.

The BC807-25 is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Epitaxial planar die construction • BC817 Complementary NPN type • Halogen-free, Green ...

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PNP 45V 500mA 310mW SOT-23 Surface Mount 3Pins - 160hFE 150°C - -
2SA1943OTU
2SA1943OTU - Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

SC15776

Bipolar (BJT) Single Transistor, PNP, -250V, -17A, 150W, TO-264

ONSEMI

The 2SA1943OTU is a PNP epitaxial Silicon Transistor with excellent gain linearity for low THD, high current capability and high power dissipation. • High voltage • High frequency • Complement to 2SC5200/FJL4315

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PNP 250V 17A 150W TO-264 Through Hole 3Pins 30MHz 80hFE 150°C - -
BC856ALT1G
BC856ALT1G - Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23

SC16053

Bipolar (BJT) Single Transistor, PNP, -65 , -100mA, 225mW, SOT-23

ONSEMI

The BC856ALT1G is a PNP general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • AEC-Q101 qualified and PPAP capable

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PNP 65V 100mA 225mW SOT-23 Surface Mount 3Pins 100MHz 100hFE 150°C BCxxx AEC-Q101
MJD45H11G
MJD45H11G - Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD

SC16105

Bipolar (BJT) Single Transistor, Audio, PNP, 80V, 8A, 20W, TO-252 (DPAK), SMD

ONSEMI

The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Electrically similar to popular D44H/D45H series • ...

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PNP 80V 8A 20W TO-252 (DPAK) Surface Mount 3Pins 90MHz 60hFE 150°C - AEC-Q101
BC807-25,215
BC807-25,215 - Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD

SC16016

Bipolar (BJT) Single Transistor, PNP, 45V, -500mA, 250mW, SOT-23, SMD

NEXPERIA

The BC807-25 is a PNP general purpose Transistor with 3 leads, high current and low voltage, plastic surface mount package. Designed for switching and amplification applications. • 150°C Junction temperature • 5pF Collector capacitance

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PNP 45V 500mA 250mW SOT-23 Surface Mount 3Pins 100MHz 160hFE 150°C BC807 -
BC857BLT1G
BC857BLT1G - Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

SC16057

Bipolar (BJT) Single Transistor, PNP, -45V, -100mA, 225mW, SOT-23

ONSEMI

The BC857BLT1G is a -45V PNP silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications. • Halogen-free/BFR-free • -50V Collector to base voltage (VCBO) • -5V Emitter ...

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PNP 45V 100mA 225mW SOT-23 Surface Mount 3Pins 100MHz 100hFE 150°C BCxxx AEC-Q101
BC847BPN,115
BC847BPN,115 - Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88

SC16127

Bipolar Transistor Array, NPN, PNP, 45V, 100mA, 200mW, 200hFE, SC-88

NEXPERIA

The BC847BPN from NXP is a surface mount NPN/PNP general purpose transistor in SOT-363 (SC-88) package. This transistor is characterized with low collector capacitance, low collector to emitter saturation voltage and closely matched current gain. It reduce...

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NPN, PNP - - - SC-88 Surface Mount 6Pins - - 150°C - -
2N6109
2N6109 - Bipolar Transistor, PNP, 50V, 7A, TO-220

SC15381

Bipolar Transistor, PNP, 50V, 7A, TO-220

MULTICOMP PRO

The 2N6109 is a -50V Silicon PNP Complementary Plastic Power Transistor designed for use in general purpose amplifier and switching applications. • DC current gain (hfe = 30 to 150 at Ic = 7A) • Collector-emitter sustaining voltage (Vceo (sus) = 50VDC mini...

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PNP 50V 7A 40W TO-220 Through Hole 3Pins 10MHz 30hFE 150°C - -
BC556BTA
BC556BTA - Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92

SC15787

Bipolar (BJT) Single Transistor, PNP, -65V, -100mA, 500mW, TO-92

ONSEMI

The BC556BTA is a PNP epitaxial silicon Bipolar Transistor suitable for switching and amplifier applications. • High voltage VCEO • Complement to BC546

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PNP 65V 100mA 500mW TO-92 Through Hole 3Pins 150MHz 200hFE 150°C - -
MMBT5401LT1G
MMBT5401LT1G - Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23

SC16070

Bipolar (BJT) Single Transistor, PNP, -150V, -500mA, 225mW, SOT-23

ONSEMI

The MMBT5401LT1G is a PNP high voltage Bipolar Transistor designed for general purpose switching applications. The device is housed in the package which is designed for lower power surface-mount applications. • Halogen-free • AEC-Q101 qualified and PPAP ca...

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PNP 150V 500mA 225mW SOT-23 Surface Mount 3Pins 300MHz 100hFE 150°C MMBTxxxx AEC-Q101
SS8550DBU
SS8550DBU - Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

SC15798

Bipolar (BJT) Single Transistor, PNP, -25V, -1.5A, 1W, TO-226AA

ONSEMI

The SS8550DBU is a PNP Epitaxial Silicon Transistor designed for use in 2W output amplifier of portable radios in Class B push-pull operation. • Complimentary to SS8050

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PNP 25V 1.5A 1W TO-226AA Through Hole 3Pins 200MHz 160hFE 150°C - -
BC856BDW1T1G
BC856BDW1T1G - Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363

SC16138

Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363

ONSEMI

The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range

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Dual PNP - - - SOT-363 Surface Mount 6Pins - - 150°C BCxxx Series -
BC807-40LVL
BC807-40LVL - Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

SC15934

Bipolar (BJT) Single Transistor, PNP, -45V, -500mA, 250mW, TO-236AB, SMD

NEXPERIA

• Transistor Polarity : PNP • Collector Emitter Voltage Max : 45V • Continuous Collector Current : 500mA • Power Dissipation : 250mW • Transistor Case Style : TO-236AB • Transistor Mounting : Surface Mount • No. of Pins : 3Pins • Transition Frequency : 80MHz • DC Current Gain hFE Min : 250hFE • Operating Temperature Max : 150°C • Product Range : BC807L • Qualification : AEC-Q101

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PNP 45V 500mA 250mW TO-236AB Surface Mount 3Pins 80MHz 250hFE 150°C BC807L AEC-Q101