Dual Transistors
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Dual Transistors
Displaying products for Dual Transistors - from our range of leading brand manufacturers.
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
Price Ex. VAT (Inc. VAT)
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Quantity | Transistor Polarity | Collector Emitter Voltage Max NPN | Collector Emitter Voltage Max PNP | DC Collector Current | Continuous Collector Current NPN | DC Current Gain hFE | Continuous Collector Current PNP | Power Dissipation NPN | Power Dissipation PNP | DC Current Gain hFE Min NPN | DC Current Gain hFE Min PNP | Transistor Case Style | No. of Pins | Transistor Mounting | Operating Temperature Max | Transition Frequency NPN | Transition Frequency PNP | Product Range | Qualification | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BDW1T1G
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SC16138 |
Bipolar Transistor Array, Dual PNP, -65V, -100mA, 380mW, 220hFE, SOT-363 ONSEMI The BC856BDW1T1G is a PNP dual Bipolar Transistor Array designed for general purpose amplifier applications. It is designed for low power surface-mount applications. • Halogen-free • -55 to 150°C Junction temperature range
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Dual PNP | - | 65V | -100mA | - | 220hFE | 100mA | - | 380mW | - | 220hFE | SOT-363 | 6Pins | Surface Mount | 150°C | - | 100MHz | BCxxx Series | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUN5211DW1T1G
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SC15948 |
Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50V, 100mA, 10 kohm, 10 kohm ONSEMI The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistor...
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Dual NPN | 50V | - | - | - | - | - | - | - | - | - | SOT-363 | - | Surface Mount | 150°C | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7103TRPBF
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SC16693 |
SMD Dual N Channel MOSFET Transistor, SOIC, 50V, 3A INFINEON The IRF7103TRPBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of ...
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- | - | - | - | - | - | - | - | - | - | - | SOIC | 8Pins | - | 150°C | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTZD3154NT1G
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SC16697 |
SMD Dual MOSFET N Channel Transistor, SOT-563, 20V, 540mA ONSEMI The NTZD3154NT1G is a dual N-channel small signal MOSFET designed for cell phones, digital cameras, PDAs and pagers etc. It is suitable for load/power switches, power supply converter circuits and battery management applications. • Low RDS (ON) improving s...
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- | - | - | - | - | - | - | - | - | - | - | SOT-563 | 6Pins | - | 150°C | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4925DDY-T1-GE3
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SC16688 |
SMD Dual MOSFET P Channel Transistor, SOIC, 30V, 8A VISHAY The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages whic...
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- | - | - | - | - | - | - | - | - | - | - | SOIC | 8Pins | - | 150°C | - | - | - | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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DMC2400UV-7
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SC16695 |
SMD Dual MOSFET Complementary N and P Channel Transistor, SOT-563, 20V, 1.03A DIODES INC. DMC2400UV-7 is a complementary pair enhancement mode MOSFET in 6 pin SOT-563 package. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effic...
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- | - | - | - | - | - | - | - | - | - | - | SOT-563 | 6Pins | - | 150°C | - | - | - | AEC-Q101 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4935BZ
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SC16696 |
SMD Dual MOSFET P Channel Transistor, SOIC, 6.9A, 30V ONSEMI The FDS4935BZ is a 30V Dual P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches...
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- | - | - | - | - | - | - | - | - | - | - | SOIC | 8Pins | - | 150°C | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS4559
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SC16692 |
SMD Dual MOSFET PowerTrench Complementary N and P Channel Transistor, 60V, 4.5A ONSEMI The FDS4559 is a complementary MOSFET device is produced using advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Suitable for LCD backligh...
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- | - | - | - | - | - | - | - | - | - | - | SOIC | 8Pins | - | 175°C | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BCV62B,215
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SC16131 |
Bipolar Transistor Array, Dual PNP, 30V, -100mA, 250mW, 220hFE, SOT-143B NEXPERIA The BCV62B is a PNP general-purpose double Bipolar Transistor Array in a small surface-mount plastic package. It is designed for applications with working point independent of temperature and current mirrors. • Low current • Low voltage • Matched pairs • B...
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Dual PNP | - | 30V | -100mA | - | 220hFE | 100mA | - | 250mW | - | 220hFE | SOT-143B | 4Pins | Surface Mount | 150°C | - | 100MHz | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDS8858CZ
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SC16689 |
SMD Dual MOSFET N and P Channel Transistor, PowerTrench, SOIC, 30V, 8.6A ONSEMI The FDS8858CZ is a 30V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power s...
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- | - | - | - | - | - | - | - | - | - | - | SOIC | 8Pins | - | 150°C | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC847BS-7-F
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SC16137 |
Bipolar Transistor Array, Dual, NPN, 45V, 100mA, 200mW, 200hFE, SOT-363 DIODES INC. The BC847BS-7-F is a dual NPN small signal surface-mount Bipolar Transistor Array ideally suitable for automatic insertion, switching and AF amplifier applications. • UL94V-0 Flammability rating • Ultra-small surface-mount package • Halogen-free, Green dev...
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Dual NPN | 45V | - | 100mA | 100mA | 200hFE | - | 200mW | - | 200hFE | - | SOT-363 | 6Pins | Surface Mount | 150°C | 100MHz | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856S,115
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SC16120 |
Bipolar Transistor Array, Dual PNP, -65V, -100mA, 220mW, 110hFE, SOT-363 NEXPERIA The BC856S is a dual PNP Bipolar Transistor Array in a very small surface-mount plastic package. It is suitable for general-purpose switching and amplification applications. • Low collector capacitance • Low collector-emitter saturation voltage • Closely m...
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Dual PNP | - | 65V | -100mA | - | 110hFE | 100mA | - | 220mW | - | 110hFE | SOT-363 | 6Pins | Surface Mount | 150°C | - | 100MHz | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDC6333C..
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SC16694 |
SMD Complementary N and P Channel Dual MOSFET Transistor, SuperSOT, 30V, 2.5A ONSEMI The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation ...
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- | - | - | - | - | - | - | - | - | - | - | SuperSOT | 6Pins | - | 150°C | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FDD8424H
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SC16682 |
SMD Dual N & P Channel Mosfet Transistor, TO-252, 40V, 9A ONSEMI The FDD8424H is a 40V Dual N-channel and P-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized p...
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- | - | - | - | - | - | - | - | - | - | - | TO-252 (DPAK) | 5Pins | - | 150°C | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TIP110
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SC01372 |
Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 2 A, 50 W, TO-220 MULTICOMP The TIP110 is a NPN Darlington Transistor designed for general-purpose amplifier and low speed switching applications. • Monolithic construction with built-in-base-emitter shunt resistor • -65 to 150°C Operating junction temperature range • Multicomp produ...
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NPN | - | - | - | - | - | - | - | - | - | - | TO-220 | 3Pins | - | 150°C | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ACPL-227-500E
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SC17356 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 50mA, 3kV, 50% BROADCOM • Current transfer ratio CTR of 50% (min) at IF = ±5mA, VCE = 5V • High input-output isolation voltage of VISO = 3000Vrms • Non saturated response time (tr) is 2µs(typ) at VCC = 10V, IC = 2mA and RL= 100 ohm • CMR of 10KV/μs (typical) • CSA, UL and IEC/EN...
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | ACPL-227 / ACPL-247 | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MCT62
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SC17341 |
Optocoupler, Transistor Output, 2 Channel, DIP, 8 Pins, 60mA, 5kV, 100 % ONSEMI The MCT62 is a 8-pin DIP 2-channel Phototransistor Output Optocoupler suitable for use with the density applications. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. • Choice of 3 curre...
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ILD213T
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SC17309 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 30mA, 4kV, 100% VISHAY The ILD213T is a Phototransistor Output Optocoupler with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation b...
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | ILD205T; ILD206T; ILD207T; ILD211T; ILD213T | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MOCD207R2M
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SC17313 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 60mA, 2.5kV, 100% ONSEMI • No. of Pins : 8Pins
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ACPL-227-50BE
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SC17357 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 50mA, 3kV, 130% BROADCOM • High input-output isolation voltage • Non-saturated response time • Safety and regulatory approvals
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ILD207T
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SC17365 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 30mA, 4kV, 100% VISHAY The ILD207T is a Phototransistor Output Optocoupler with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation b...
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MOCD217M
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SC17302 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 60mA, 2.5kV, 100 % ONSEMI The MOCD217-M is a dual-channel Phototransistor Output Optocoupler consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is...
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ILD206T
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SC17308 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 30mA, 4kV, 63% VISHAY The ILD206T is a Phototransistor Output Optocoupler with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation b...
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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ACPL-224-500E
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SC17355 |
Optocoupler, Transistor Output, 2 Channel, SOIC, 8 Pins, 50mA, 3kV, 20% BROADCOM AC input, dual-channel half-pitch phototransistor optocoupler suitable for use in I/O interface for programmable controllers, computers, sequence controllers, system appliances, measuring instruments, signal transmission between circuits of different poten...
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- | - | - | - | - | - | - | - | - | - | - | - | 8Pins | - | - | - | - | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BC856BS,115
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SC21409 |
Bipolar Transistor Array, Dual PNP, 65 V, 100 mA NEXPERIA The BC856BS is a 100mA PNP-PNP General Purpose Transistor Pair in a very small surface-mount plastic package. It is suitable for use with general purpose switching and amplification. • Low collector capacitance • Low collector-emitter saturation voltage • ...
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Dual PNP | - | 65V | - | - | - | 100mA | - | 200mW | - | 200hFE | SOT-363 | 6Pins | Surface Mount | 150°C | - | 100MHz | - | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||