Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
Availability Price For
Price Ex. VAT (Inc. VAT)
Quantity
Channel Type Drain Source Voltage Vds Continuous Drain Current Id Drain Source On State Resistance Transistor Case Style Transistor Mounting Rds(on) Test Voltage Gate Source Threshold Voltage Max Power Dissipation No. of Pins Operating Temperature Max Product Range Qualification
 
 
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2N7002BK,215
2N7002BK,215 - Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

SC15984

Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD

NEXPERIA

The 2N7002BK is a N-channel enhancement mode Field-Effect Transistor (FET) in surface-mounted plastic package using Trench MOSFET technology. Suitable for high-speed line driver, low-side loadswitch and switching circuits. • Logic-level compatible • Very f...

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N Channel 60V 350mA 1.6ohm SOT-23 Surface Mount 10V 1.6V 440mW 3Pins 150°C - AEC-Q101
BC859C,215
BC859C,215 - Bipolar (BJT) Single Transistor, PNP, 30V, 100mA, 250mW, SOT-23, SMD

SC16090

Bipolar (BJT) Single Transistor, PNP, 30V, 100mA, 250mW, SOT-23, SMD

NEXPERIA

The BC859C is a PNP General Purpose Transistor housed in a plastic package. It is suitable for use with the low noise input stages of audio frequency equipment. • NPN complements are BC849 and BC850 • 4C Marking code

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- - - - SOT-23 Surface Mount - - 250mW 3Pins 150°C - AEC-Q101
FDN5630
FDN5630 - Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

SC16780

Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount

ONSEMI

The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combin...

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N Channel 60V 1.7A 0.1ohm SuperSOT Surface Mount 10V 2.4V 500mW 3Pins 150°C - -
BZX84-C3V9,215
BZX84-C3V9,215 - Zener Single Diode, 3.9 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

SC17892

Zener Single Diode, 3.9 V, 250 mW, SOT-23, 3 Pins, 150 °C, Surface Mount

NEXPERIA

The BZX84 series low-power voltage regulator Zener Diode encapsulated in a small SOT23 (TO-236AB) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±1%, ±2% and ±5% Three tolerance series • 2.4 to 75V (E24 ran...

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- - - - - - - - 250mW 3Pins 150°C BZX84 -
BAV70LT1G
BAV70LT1G - Small Signal Switching Diode, Dual Common Cathode, 70V, 200mA, 1.25V, 6ns, 500mA

SC17733

Small Signal Switching Diode, Dual Common Cathode, 70V, 200mA, 1.25V, 6ns, 500mA

ONSEMI

• Extremely fast switching speed • Halogen-free

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- - - - - - - - - 3Pins 150°C BAV70 AEC-Q101
MM3Z4V7T1G
MM3Z4V7T1G - Zener Single Diode, General Purpose, 4.7 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

SC17925

Zener Single Diode, General Purpose, 4.7 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

ONSEMI

The MM3ZxxxT1G series surface mount Voltage Regulator Zener Diode designed to provide voltage regulation protection and especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand hel...

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- - - - - - - - 300mW 2Pins 150°C MM3ZxxxT1G -
BC846BLT1G.
BC846BLT1G. - Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

SC16025

Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD r...

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- - - - SOT-23 Surface Mount - - 300mW 3Pins 150°C - -
BAW56
BAW56 - Small Signal Diode, Dual Common Anode, 75 V, 300 mA, 1.25 V, 4 ns, 2 A

SC17797

Small Signal Diode, Dual Common Anode, 75 V, 300 mA, 1.25 V, 4 ns, 2 A

DIODES INC.

The BAW56 is a surface mount dual Small Signal Switching Diode encapsulated in a moulded plastic case. It has two diode elements connected in common anode configuration and matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is id...

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- - - - - - - - - 3Pins 150°C BAW56 -
PMEG10010ELRX
PMEG10010ELRX - Schottky Rectifier, 100 V, 1 A, Single, SOD-123W, 2 Pins, 770 mV

SC17634

Schottky Rectifier, 100 V, 1 A, Single, SOD-123W, 2 Pins, 770 mV

NEXPERIA

The PMEG10010ELR is a low leakage current planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection. It is encapsulated in a small and flat lead surface-mounted device (SMD) plastic ...

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- - - - - - - - - 2Pins 175°C PMEG1 AEC-Q101
PMEG4010CEJ,115
PMEG4010CEJ,115 - Schottky Rectifier, 40 V, 1 A, Single, SOD-323F, 2 Pins, 570 mV

SC17552

Schottky Rectifier, 40 V, 1 A, Single, SOD-323F, 2 Pins, 570 mV

NEXPERIA

The PMEG4010CEJ,115 is a planar maximum efficiency general application (MEGA) Schottky barrier Rectifier Diode with an integrated guard ring for stress protection. The Low VF Schottky rectifier offers extremely low forward voltage drop during operation, re...

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- - - - - - - - - 2Pins 150°C PMEG4 -
BAT54C-7-F
BAT54C-7-F - Small Signal Schottky Diode, Dual Common Cathode, 30 V, 100 mA, 800 mV, 600 mA, 150 °C

SC17576

Small Signal Schottky Diode, Dual Common Cathode, 30 V, 100 mA, 800 mV, 600 mA, 150 °C

DIODES INC.

The BAT54C-7-F is a surface mount Schottky Barrier Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals and PN junction guard ring for transient and ESD protection. • Low turn-on vol...

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- - - - - - - - - 3Pins 150°C BAT54 -
TN0702N3-G
TN0702N3-G - N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

SC17007

N Channel Power MOSFET, 20V, 530mA, 1 Ohm, TO-92

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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N Channel 20V 530mA 1.3ohm TO-92 Through Hole 5V 1V 1W 3Pins 150°C - -
RF071M2STR
RF071M2STR - Fast / Ultrafast Diode, 200 V, 700 mA, Single, 850 mV, 25 ns, 15 A

SC17777

Fast / Ultrafast Diode, 200 V, 700 mA, Single, 850 mV, 25 ns, 15 A

ROHM

The RF071M2STR is a silicon epitaxial standard Super-fast Recovery Diode for general rectification application. • Ultra low forward voltage • Low switching loss

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- - - - - - - - - - 150°C RF071 -
ES1G
ES1G - Fast / Ultrafast Diode, 400 V, 1 A, Single, 1.3 V, 35 ns, 30 A

SC17759

Fast / Ultrafast Diode, 400 V, 1 A, Single, 1.3 V, 35 ns, 30 A

ONSEMI

The ES1G is a surface-mount Ultra-fast Recovery Rectifier with glass-passivated junction. • Colour band denotes cathode • Low-profile package • Easy pick and place • Built-in strain-relief • Superfast recovery times for high efficiency

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- - - - - - - - - - 150°C ES1G -
B140-13-F
B140-13-F - Schottky Rectifier, 40 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV

SC17566

Schottky Rectifier, 40 V, 1 A, Single, DO-214AC (SMA), 2 Pins, 500 mV

DIODES INC.

The B140-13-F is a surface mount Schottky Barrier Rectifier Diode with moulded plastic case. Suitable for low voltage, high frequency inverters, freewheeling and polarity protection applications. • Guard Ring Die Construction for Transient Protection • Low...

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- - - - - - - - - 2Pins 150°C B140 -
MMSZ3V3T1G
MMSZ3V3T1G - Zener Single Diode, 3.3 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

SC17930

Zener Single Diode, 3.3 V, 500 mW, SOD-123, 2 Pins, 150 °C, Surface Mount

ONSEMI

The MMSZ2V4T1 series surface mount Voltage Regulator Zener Diode designed for optimal automated board assembly. This device provides a convenient alternative to the leadless 34-package style. It comes with void free transfer-moulded thermosetting plastic c...

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- - - - - - - - 500mW 2Pins 150°C MMSZ2V4T1 AEC-Q101
PMEG4010BEA,115
PMEG4010BEA,115 - Schottky Rectifier, 40 V, 1 A, Single, SOD-323, 2 Pins, 640 mV

SC17676

Schottky Rectifier, 40 V, 1 A, Single, SOD-323, 2 Pins, 640 mV

NEXPERIA

The PMEG4010BEA is a very-low VF planar maximum efficiency general application (MEGA) Schottky Barrier Rectifier with an integrated guard ring for stress protection. It is encapsulated in a very small and ultra-small SMD plastic package. • High efficiency ...

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- - - - - - - - - 2Pins 150°C PMEG Series -
BYG23T-M3/TR
BYG23T-M3/TR - Fast / Ultrafast Diode, 1.3 kV, 1 A, Single, 1.9 V, 75 ns, 18 A

SC17802

Fast / Ultrafast Diode, 1.3 kV, 1 A, Single, 1.9 V, 75 ns, 18 A

VISHAY

The BYG23T-M3/TR is a high voltage ultrafast Avalanche SMD Rectifier Diode with matte tin-plated leads terminals, UL94V-0 flame-rated moulding compound case and colour band denotes the cathode end polarity. Low reverse current and high reverse voltage. Ide...

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- - - - - - - - - - 150°C BYG23 -
PBSS8110T,215
PBSS8110T,215 - Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD

SC16078

Bipolar (BJT) Single Transistor, NPN, 100V, 1A, 300mW, SOT-23, SMD

NEXPERIA

PBSS8110T,215 is a NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Typical applications include major application segments: automotive 42V power, telecom infrastructure, industrial, power management: DC/D...

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- - - - SOT-23 Surface Mount - - 300mW 3Pins 150°C - -
IRFPG50PBF
IRFPG50PBF - Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

SC16978

Power MOSFET, N Channel, 1 kV, 6 A, 2 ohm, TO-247AC, Through Hole

VISHAY

The IRFPG50PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It a...

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N Channel 1kV 6A 2ohm TO-247AC Through Hole 10V 4V 180W 3Pins 150°C - -
2N7002K
2N7002K - Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

SC15990

Power MOSFET, N Channel, 60V, 300mA, 2 Ohm, SOT-23, SMD

ONSEMI

The 2N7002K is a N-channel enhancement mode Field Effect Transistor features low on resistance, low gate threshold voltage, low input capacitance and fast switching speed. • Low input/output leakage • ±20V Gate-source voltage

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N Channel 60V 300mA 2ohm SOT-23 Surface Mount 10V 2.5V 350mW 3Pins 150°C - -
BC846BDW1T1G
BC846BDW1T1G - Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

SC16123

Bipolar Transistor Array, Dual NPN, 65V, 100mA, 380mW, 200hFE, SOT-363

ONSEMI

The BC846BDW1T1G is a NPN dual Transistor, designed for general purpose amplifier applications. Ideal for low power surface mount applications. • AEC-Q101 Qualified • PPAP capable • Halogen-free

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- - - - SOT-363 Surface Mount - - - 6Pins 150°C BCxxx Series -
BSS806NH6327XTSA1
BSS806NH6327XTSA1 - Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount

SC16851

Power MOSFET, N Channel, 20 V, 2.3 A, 0.057 ohm, SOT-23, Surface Mount

INFINEON

The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level. • Halogen-free

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N Channel 20V 2.3A 0.057ohm SOT-23 Surface Mount 2.5V 550mV 500mW 3Pins 150°C - AEC-Q101
BAS21
BAS21 - Small Signal Diode, Single, 250 V, 400 mA, 1 V, 50 ns, 1 A

SC17794

Small Signal Diode, Single, 250 V, 400 mA, 1 V, 50 ns, 1 A

DIODES INC.

The BAS21 is a surface mount Small Signal Switching Diode encapsulated in a moulded plastic case. It has matte tin (lead-free plating) annealed over alloy 42 lead frame terminals. It is ideally suited for automated insertion. It can also be used for genera...

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- - - - - - - - - 3Pins 150°C BAS21 -
80SQ045NG
80SQ045NG - Schottky Rectifier, 45 V, 8 A, Single, DO-201AD, 2 Pins, 550 mV

SC17491

Schottky Rectifier, 45 V, 8 A, Single, DO-201AD, 2 Pins, 550 mV

ONSEMI

The 80SQ045NG is an axial-leaded Schottky Barrier Rectifier with epoxy moulded case, all external surfaces corrosion-resistant and terminal leads are readily solderable finish. The Schottky barrier principle in a large area metal-to-silicon power diode. St...

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- - - - - - - - - 2Pins 125°C 80SQ0 -