Discrete Semiconductors

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Discrete Semiconductors


Browse a large selection of discrete semiconductor devices from trusted manufacturers that will suit your electronics project. Find the diode, thyristor, transistor and more for your project design with CPC. Need to know more about our products? Our team is happy to help call them at 03447 880088, or send an email to sales@cpc.co.uk.

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  Manufacturer Part No Order Code Description / Manufacturer
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Quantity
Diode Configuration Repetitive Peak Reverse Voltage Average Forward Current Forward Voltage Max Forward Surge Current Operating Temperature Max Diode Case Style No. of Pins Reverse Recovery Time Diode Mounting Product Range Qualification
 
 
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NSR0320MW2T1G
NSR0320MW2T1G - Small Signal Schottky Diode, Single, 23 V, 900 mA, 500 mV, 5 A, 125 °C

SC17605

Small Signal Schottky Diode, Single, 23 V, 900 mA, 500 mV, 5 A, 125 °C

ONSEMI

The NSR0320MW2T1G is a Schottky Barrier Diode designed for high current, handling capability and low forward voltage performance. • Low forward voltage • High current capability • Halogen-free

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Single 23V 900mA 500mV 5A 125°C SOD-323 2Pins - Surface Mount NSR03 AEC-Q101
BZV55-C5V6,115
BZV55-C5V6,115 - Zener Single Diode, 5.6 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

SC17905

Zener Single Diode, 5.6 V, 500 mW, SOD-80C, 2 Pins, 200 °C, Surface Mount

NEXPERIA

The BZV55 series from NXP are surface mount low power voltage regulator diodes which are hermetically sealed in SOD80C package. The device features non repetitive peak reverse power dissipation ≤ 40 W, total power dissipation≤ 500mW and low differential re...

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- - - - - 200°C SOD-80C 2Pins - Surface Mount BZV55 -
BAV70LT3G
BAV70LT3G - Small Signal Diode, Dual Common Cathode, 100 V, 200 mA, 1.25 V, 6 ns, 500 mA

SC17821

Small Signal Diode, Dual Common Cathode, 100 V, 200 mA, 1.25 V, 6 ns, 500 mA

ONSEMI

• Diode Configuration : Dual Common Cathode • Repetitive Peak Reverse Voltage : 100V • Average Forward Current : 200mA • Forward Voltage Max : 1.25V • Forward Surge Current : 500mA • Operating Temperature Max : 150°C • Diode Case Style : SOT-23 • No. of Pins : 3Pins • Reverse Recovery Time : 6ns • Diode Mounting : Surface Mount • Product Range : BAV70 • Qualification : AEC-Q101

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Dual Common Cathode 100V 200mA 1.25V 500mA 150°C SOT-23 3Pins 6ns Surface Mount BAV70 AEC-Q101
IXFN180N15P
IXFN180N15P - MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V

SC17025

MOSFET Transistor, N Channel, 150 A, 150 V, 0.011 ohm, 10 V, 5 V

IXYS SEMICONDUCTOR

The IXFN180N15P is a 150V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge a...

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- - - - - 175°C - - - - - -
MMBT2222A,215
MMBT2222A,215 - Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 600mA, 250mW, SOT-23, SMD

SC16040

Bipolar (BJT) Single Transistor, Switching, NPN, 40V, 600mA, 250mW, SOT-23, SMD

NEXPERIA

The MMBT2222A is a NPN Switching Transistor housed in a plastic package. It is suitable for use with the switching and linear amplification. • High current • Low voltage • PNP complement is PMBT2907A • 7C Marking code

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- - - - - 150°C - 3Pins - - - -
CSD18504Q5A
CSD18504Q5A - SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

SC16683

SMD Power MOSFET N Channel NexFET Transistor, 40V, 50A,

TEXAS INSTRUMENTS

The CSD18504Q5A is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications. It is suitable for use in DC-to-DC conversion, secondary side synchronous rectifier and battery motor control applications. • Ultra-low Qg and...

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- - - - - 150°C - 8Pins - - - -
BAV199LT1G
BAV199LT1G - Dual Switching Small Signal Diode, 70V, 215mA, 1.25V, 3us, 500mA

SC17732

Dual Switching Small Signal Diode, 70V, 215mA, 1.25V, 3us, 500mA

ONSEMI

• Medium speed switching times • AEC-Q101 qualified and PPAP capable • Pb-free, halogen free/BFR free

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Single Pair Series 70V 215mA 1.25V 500mA 150°C SOT-23 3Pins 3µs Surface Mount BAV19 AEC-Q101
BC846BLT1G.
BC846BLT1G. - Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

SC16025

Bipolar (BJT) Single Transistor, General Purpose, NPN, 65V, 100mA, 300mW, SOT-23, SMD

ONSEMI

The BC846BLT1G is a NPN silicon general purpose Bipolar Transistor, designed for use in linear and switching applications. Ideal for lower power surface mount applications. • Inductive load protection • Steering logic • Polarity reversal protection • ESD r...

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- - - - - 150°C - 3Pins - - - -
BT152-800R,127
BT152-800R,127 - Thyristor, 800V, 32mA, 13A, 20A, TO-220AB, 3 Pins

SC17046

Thyristor, 800V, 32mA, 13A, 20A, TO-220AB, 3 Pins

WEEN SEMICONDUCTORS

The BT152-800R,127 is a planar passivated silicon controlled rectifier in a 3 pin TO-220AB package. It is intended for use in applications requiring very high inrush current capability and high thermal cycling performance. Typical applications include igni...

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- - - - - 125°C - 3Pins - - BT152 -
FDP5800
FDP5800 - Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole

SC16966

Power MOSFET, N Channel, 60 V, 80 A, 0.0046 ohm, TO-220, Through Hole

ONSEMI

The FDP5800 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification, battery protecti...

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- - - - - 175°C - 3Pins - - - -
S1B-E3/61T
S1B-E3/61T - Standard Recovery Diode, 100 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A

SC17866

Standard Recovery Diode, 100 V, 1 A, Single, 1.1 V, 1.8 µs, 30 A

VISHAY

The S1B-E3/5AT is a surface-mount Glass-passivated Rectifier with matte tin-plated solderable leads. It is suitable for use in general-purpose rectification of power supplies, inverters, converters and freewheeling diodes. • Ideal for automated placement •...

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Single 100V 1A 1.1V 30A 150°C DO-214AC (SMA) 2Pins 1.8µs - - -
HUF75344G3
HUF75344G3 - Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole

SC16989

Power MOSFET, N Channel, 55 V, 75 A, 0.0065 ohm, TO-247, Through Hole

ONSEMI

The HUF75344G3 is a N-channel UltraFET Power MOSFET. This advanced process technology achieves the lowest possible on resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mod...

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- - - - - 175°C - 3Pins - - - -
FDH44N50
FDH44N50 - Power MOSFET, General Purpose, N Channel, 500 V, 44 A, 0.11 ohm, TO-247, Through Hole

SC17002

Power MOSFET, General Purpose, N Channel, 500 V, 44 A, 0.11 ohm, TO-247, Through Hole

ONSEMI

The FDH44N50 is a 500V N-channel Power MOSFET based on planar stripe and DMOS technology. This SMPS series MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's r...

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- - - - - 175°C - 3Pins - - - -
BZX384-C15,115
BZX384-C15,115 - Zener Single Diode, 15 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

SC18017

Zener Single Diode, 15 V, 300 mW, SOD-323, 2 Pins, 150 °C, Surface Mount

NEXPERIA

The BZX384 series low-power voltage regulator Zener Diode encapsulated in a very small SOD323 (SC-76) plastic surface-mounted device (SMD) package. It is suitable for general regulation functions. • ±2% and ±5% Two tolerance series • 2.4 to 75V (E24 range)...

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- - - - - 150°C SOD-323 2Pins - Surface Mount BZX384 Series -
ULN2003AINSR
ULN2003AINSR - High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP

SC18106

High Voltage, High Current Darlington Transistor Arrays, Bipolar, NPN, 50V, 500mA, SOP

TEXAS INSTRUMENTS

High-voltage, high-current darlington arrays each contains seven open collector darlington pairs with common emitters. Suitable for relay drivers, stepper and DC brushed motor drivers, lamp drivers, display drivers (LED and gas discharge), line drivers and...

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- - - - - 105°C - 16Pins - - - -
MBRS140T3G
MBRS140T3G - Schottky Rectifier, 40 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 600 mV

SC17694

Schottky Rectifier, 40 V, 1 A, Single, DO-214AA (SMB), 2 Pins, 600 mV

ONSEMI

The MBRS140T3G from On Semiconductor is surface mount "J" bent leaded schottky power rectifier in SMB (CASE 403A-03 ) package. It features epitaxial construction with highly stable oxide passivated junction and metal contact. This device is intended for us...

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Single 40V 1A 600mV 40A 125°C DO-214AA (SMB) 2Pins - Surface Mount - AEC-Q101
MB2S
MB2S - Bridge Rectifier Diode, Single Phase, 200V, 500mA, SOIC, 1V, 4 Pins

SC17424

Bridge Rectifier Diode, Single Phase, 200V, 500mA, SOIC, 1V, 4 Pins

ONSEMI

The MB2S is a 4-pin single-phase Bridge Rectifier Diode achieves high surge current absorption within a very small foot print. It shines in surge capability within its small 35mm² form-factor. In order to absorb high surge currents, the design supports a 3...

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- 200V 500mA 1V 35A 150°C - 4Pins - - MB2S -
MM3Z5V1T1G
MM3Z5V1T1G - Voltage Regulator Zener Single Diode, 5.1V, 300mW, SOD-323

SC17926

Voltage Regulator Zener Single Diode, 5.1V, 300mW, SOD-323

ONSEMI

The MM3ZxxxT1G series surface mount Voltage Regulator Zener Diode designed to provide voltage regulation protection and especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand hel...

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- - - - - 150°C SOD-323 2Pins - Surface Mount MM3ZxxxT1G -
1N5819-E3/54
1N5819-E3/54 - Schottky Rectifier, 40V, 1A, DO-41 (DO-204AL), 600mV

SC19962

Schottky Rectifier, 40V, 1A, DO-41 (DO-204AL), 600mV

VISHAY

The 1N5819-E3/54 is a Schottky Barrier Plastic Rectifier with solderable matte tin-plated terminals. It is suitable for use in low-voltage high-frequency inverters, free-wheeling, DC/DC converters and polarity protection applications. • Colour band denotes...

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Single 40V 1A 600mV 25A 150°C DO-41 (DO-204AL) 2Pins - Through Hole 1N5819 -
BC807-40LT1G
BC807-40LT1G - Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD

SC19261

Bipolar (BJT) Single Transistor, PNP, 45V, 500mA, 300mW, SOT-23, SMD

ONSEMI

The BC807-40LT1G is a PNP Bipolar Transistor designed for use in linear and switching applications. The device is housed in a surface-mount package. It offers ESD protection, polarity reversal protection, data line protection, inductive load protection and...

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- - - - - 150°C - 3Pins - - - -
MP001172
MP001172 - PNP Biipolar BJT Transistor, TO-92, 150V, 500mA

SC20028

PNP Biipolar BJT Transistor, TO-92, 150V, 500mA

MULTICOMP PRO

• PNP, 0.6A, 150V transistor • No external components required • Internal short-circuit current limiting • Internal thermal overload protection • Features thermal shutdown and current limiting making the device remarkably rugged • Multicomp Pro products a...

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- - - - - 150°C - 3Pins - - - -
2N6058
2N6058 - Silicon Darlingtion Complimentary Power Transistor, NPN, 80V, 12A, TO-3

SC20273

Silicon Darlingtion Complimentary Power Transistor, NPN, 80V, 12A, TO-3

MULTICOMP PRO

• Operating Temperature Max : 200°C • No. of Pins : 2Pins

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- - - - - 200°C - 2Pins - - - -
MP001168
MP001168 - Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 5W, TO-39

SC21697

 
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RoHS

Bipolar (BJT) Single Transistor, NPN, 80V, 1A, 5W, TO-39

MULTICOMP PRO

• Operating Temperature Max : 200°C • No. of Pins : 3Pins

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- - - - - 200°C - 3Pins - - - -
6A40G
6A40G - Standard Recovery Diode, 400 V, 6 A, Single, 1 V, 250 A

SC21535

 
New product
Data Sheet
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RoHS

Standard Recovery Diode, 400 V, 6 A, Single, 1 V, 250 A

TAIWAN SEMICONDUCTOR

The 6A40G is a Glass-passivated Rectifier with moulded plastic case and solderable pure tin-plated leads. • Colour band denotes cathode end polarity • UL94V-0 Epoxy flammability rating • High current capability • High reliability • High surge current capab...

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Single 400V 6A 1V 250A 150°C Axial Leaded 2Pins - - 6A40 -
1N4001-T
1N4001-T - Standard Recovery Diode, 50 V, 1 A, Single, 1 V, 30 A

SC17786

Standard Recovery Diode, 50 V, 1 A, Single, 1 V, 30 A

DIODES INC.

The 1N4001-T is a Rectifier Diode with moulded plastic case. The rectifier diode has high current capability and low forward voltage drop. • Diffused Junction • High Current Capability and Low Forward Voltage Drop • Low Reverse Leakage Current

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Single 50V 1A 1V 30A 150°C DO-41 (DO-204AL) 2Pins - - 1N4001 -