IGBT Single Transistors
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| Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
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Quantity | Continuous Collector Current | Collector Emitter Saturation Voltage | Power Dissipation | Collector Emitter Voltage Max | Transistor Case Style | No. of Pins | Operating Temperature Max | Transistor Mounting | Product Range | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IHW30N160R5XKSA1
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SC15923 |
IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247 INFINEON • Continuous Collector Current : 30A • Collector Emitter Saturation Voltage : 1.85V • Power Dissipation : 263W • Collector Emitter Voltage Max : 1.6kV • Transistor Case Style : TO-247 • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Transistor Mounting : Through Hole • Product Range : Resonant Switching Series
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30A | 1.85V | 263W | 1.6kV | TO-247 | 3Pins | 175°C | Through Hole | Resonant Switching Series | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IKW40N120H3FKSA1
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SC15918 |
IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247 INFINEON The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switch...
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1+ £6.35 (£7.62) 10+ £5.39 (£6.47) 100+ £4.04 (£4.85) |
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40A | 2.4V | 483W | 1.2kV | TO-247 | 3Pins | 175°C | Through Hole | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FGH30S130P
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SC15922 |
IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247 ONSEMI • Continuous Collector Current : 60A • Collector Emitter Saturation Voltage : 1.75V • Power Dissipation : 500W • Collector Emitter Voltage Max : 1.3kV • Transistor Case Style : TO-247 • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Transistor Mounting : Through Hole
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1+ £4.03 (£4.84) 10+ £3.10 (£3.72) 100+ £2.44 (£2.93) |
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60A | 1.75V | 500W | 1.3kV | TO-247 | 3Pins | 175°C | Through Hole | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRG4PC30UPBF
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SC06939 |
IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins INFINEON The IRG4PC30UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than gen...
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23A | 2.52V | 100W | 600V | TO-247AC | 3Pins | 150°C | Through Hole | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HGTG20N60B3D
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SC06913 |
IGBT, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins ONSEMI The HGTG20N60B3D is a 600V N-channel IGBT with anti-parallel hyper fast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and th...
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40A | 1.8V | 165W | 600V | TO-247 | 3Pins | 150°C | Through Hole | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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STGW30NC120HD
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SC09975 |
IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins STMICROELECTRONICS The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family ...
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1+ £3.92 (£4.70) 25+ £3.28 (£3.94) 100+ £2.61 (£3.13) |
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60A | 2.75V | 220W | 1.2kV | TO-247 | 3Pins | 150°C | Through Hole | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HGTG30N60A4D
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SC06914 |
IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins ONSEMI The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inp...
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75A | 2.6V | 463W | 600V | TO-247 | 3Pins | 150°C | Through Hole | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGA60N65SMD
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SC15921 |
IGBT Single Transistor, 120A, 1.9V, 600W, 650V, TO-3PN ONSEMI • Continuous Collector Current : 120A • Collector Emitter Saturation Voltage : 1.9V • Power Dissipation : 600W • Collector Emitter Voltage Max : 650V • Transistor Case Style : TO-3PN • No. of Pins : 3Pins • Operating Temperature Max : 175°C • Transistor Mounting : Through Hole
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1+ £2.82 (£3.38) 10+ £2.24 (£2.69) 100+ £2.09 (£2.51) |
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120A | 1.9V | 600W | 650V | TO-3PN | 3Pins | 175°C | Through Hole | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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FGH60N60SMD
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SC15919 |
IGBT Single Transistor, 120A, 600V, 600W, TO-247AB, ONSEMI The FGH60N60SMD is a Field Stop IGBT with high current capability and low saturation voltage. • Fast switching • 175°C maximum junction temperature • Tighten parameter distribution • High input impedance • Positive temperature coefficient for easy parallel...
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1+ £4.43 (£5.32) 10+ £2.92 (£3.50) 100+ £2.50 (£3.00) |
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120A | 1.9V | 600W | 600V | TO-247AB | 3Pins | 175°C | Through Hole | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||