IGBT Single Transistors

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HGTG20N60A4D
HGTG20N60A4D - IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

SC06908

IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

ONSEMI

The HGTG20N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inp...

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70A 2.7V 290W 600V TO-247 3Pins 150°C Through Hole -
IRGP20B60PDPBF
IRGP20B60PDPBF - IGBT, 40 A, 2.35 V, 220 W, 600 V, TO-247AC, 3 Pins

SC06928

IGBT, 40 A, 2.35 V, 220 W, 600 V, TO-247AC, 3 Pins

INFINEON

The IRGP20B60PDPBF is an IGBT with ultrafast soft recovery diode. It features parallel operation for higher current applications, lower conduction losses and switching losses. The WARP2 series IGBT is suitable for telecom and server SMPS, PFC and ZVS SMPS ...

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40A 2.35V 220W 600V TO-247AC 3Pins 150°C Through Hole IRGP
HGTG30N60A4D
HGTG30N60A4D - IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

SC06914

IGBT, 75 A, 2.6 V, 463 W, 600 V, TO-247, 3 Pins

ONSEMI

The HGTG30N60A4D is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inp...

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75A 2.6V 463W 600V TO-247 3Pins 150°C - -
HGTG20N60A4
HGTG20N60A4 - IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

SC06911

IGBT, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 Pins

ONSEMI

The HGTG20N60A4 is a 600V N-channel IGBT with anti-parallel hyper fast diode. This SMPS series is a member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high inpu...

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1+ £3.96 (£4.75) 10+ £3.23 (£3.88) 100+ £2.55 (£3.06) 250+ £2.42 (£2.90)

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70A 2.7V 290W 600V TO-247 3Pins 150°C Through Hole -
STGW30NC120HD
STGW30NC120HD - IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

SC09975

IGBT, 60 A, 2.75 V, 220 W, 1.2 kV, TO-247, 3 Pins

STMICROELECTRONICS

The STGW30NC120HD is a N-channel very fast PowerMESH™ IGBT for use with induction heating and soft switching application. Using the latest high voltage technology based on its patented strip layout, STMicroelectronics has designed an advanced family ...

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60A 2.75V 220W 1.2kV TO-247 3Pins 150°C Through Hole -
HGTG20N60B3D
HGTG20N60B3D - IGBT, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins

SC06913

IGBT, 40 A, 1.8 V, 165 W, 600 V, TO-247, 3 Pins

ONSEMI

The HGTG20N60B3D is a 600V N-channel IGBT with anti-parallel hyper fast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and th...

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40A 1.8V 165W 600V TO-247 3Pins 150°C - -
IKW40N120H3FKSA1
IKW40N120H3FKSA1 - IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247

SC15918

IGBT Single Transistor, 40A, 2.4V, 483W, 1.2kV, TO-247

INFINEON

The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switch...

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40A 2.4V 483W 1.2kV TO-247 3Pins 175°C - -
IHW30N160R5XKSA1
IHW30N160R5XKSA1 - IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247

SC15923

IGBT Single Transistor, 60A, 1.85V, 263W, 1.6 kV, TO-247

INFINEON

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30A 1.85V 263W 1.6kV TO-247 3Pins 175°C - Resonant Switching Series
FGH30S130P
FGH30S130P - IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247

SC15922

IGBT Single Transistor, 60A, 1.75V, 500W, 1.3 kV, TO-247

ONSEMI

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60A 1.75V 500W 1.3kV TO-247 3Pins 175°C - -
FGA60N65SMD
FGA60N65SMD - IGBT Single Transistor, 120A, 1.9V, 600W, 650V, TO-3PN

SC15921

IGBT Single Transistor, 120A, 1.9V, 600W, 650V, TO-3PN

ONSEMI

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120A 1.9V 600W 650V TO-3PN 3Pins 175°C - -
FGH60N60SMD
FGH60N60SMD - IGBT Single Transistor, 120A, 600V, 600W, TO-247AB,

SC15919

IGBT Single Transistor, 120A, 600V, 600W, TO-247AB,

ONSEMI

The FGH60N60SMD is a Field Stop IGBT with high current capability and low saturation voltage. • Fast switching • 175°C maximum junction temperature • Tighten parameter distribution • High input impedance • Positive temperature coefficient for easy parallel...

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120A 1.9V 600W 600V TO-247AB 3Pins 175°C - -
FGA25N120ANTDTU
FGA25N120ANTDTU - IGBT Single Transistor, 25A, 2.5V, 312W, 1.2kV, TO-3P,

SC15732

IGBT Single Transistor, 25A, 2.5V, 312W, 1.2kV, TO-3P,

ONSEMI

The FGA25N120ANTD is a 1200V, 25A NPT Trench IGBT in through hole TO-3P package. IGBT offers superior conduction, switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching a...

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25A 2.5V 312W 1.2kV TO-3P 3Pins 150°C Through Hole -
IRG4PC30UPBF
IRG4PC30UPBF - IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins

SC06939

IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins

INFINEON

The IRG4PC30UPBF is an Insulated Gate Bipolar Transistor optimized for high operating frequencies 8 to 40kHz in hard switching, >200kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than gen...

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23A 2.52V 100W 600V TO-247AC 3Pins 150°C Through Hole -