MOSFET Transistors

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Channel Type Transistor Polarity Continuous Drain Current Id Drain Source Voltage Vds Drain Source On State Resistance On Resistance Rds(on)
 
 
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SI2319CDS-T1-GE3
SI2319CDS-T1-GE3 - Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount

SC16704

Power MOSFET, P Channel, 40 V, 4.4 A, 0.064 ohm, SOT-23, Surface Mount

VISHAY

The SI2319CDS-T1-GE3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature. • ±20V Gate-source voltage

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P Channel P Channel 4.4A 40V 0.064ohm 0.064ohm
BSH103,215
BSH103,215 - Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

SC19198

Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

NEXPERIA

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...

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N Channel N Channel 850mA 30V 0.4ohm 0.4ohm
BSS123,215
BSS123,215 - Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

SC19225

Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

NEXPERIA

The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...

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N Channel N Channel 150mA 100V 3.5ohm 3.5ohm
SI2319DS-T1-E3
SI2319DS-T1-E3 - Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

SC19376

Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

VISHAY

The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...

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P Channel P Channel 3A 40V 0.065ohm 0.065ohm
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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N Channel N Channel 4.3A 60V 0.125ohm 0.125ohm
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capabi...

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N Channel N Channel 20.7A 650V 0.19ohm 0.19ohm
VP3203N3-G
VP3203N3-G - Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

SC16929

Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel P Channel 650mA 30V 0.6ohm 0.6ohm
IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

SC15755

Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...

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N Channel N Channel 5.6A 100V 0.54ohm 0.54ohm
IRFP260NPBF
IRFP260NPBF - N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

SC16898

N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

INFINEON

The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...

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N Channel N Channel 50A 200V 0.04ohm 0.04ohm
NTR4171PT1G
NTR4171PT1G - Power MOSFET, P Channel, 30 V, 3.5 A, 0.05 ohm, SOT-23, Surface Mount

SC16782

Power MOSFET, P Channel, 30 V, 3.5 A, 0.05 ohm, SOT-23, Surface Mount

ONSEMI

The NTR4171PT1G is a P-channel Power MOSFET offers -30V drain source voltage and -2.2A continuous drain current. It is suitable for load switch, optimized for battery and load management applications in portable equipment like cell phones, PDA's and media ...

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P Channel P Channel 3.5A 30V 0.05ohm 0.05ohm
BSS138PW,115
BSS138PW,115 - Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

SC16000

Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

NEXPERIA

The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel N Channel 320mA 60V 0.9ohm 0.9ohm
BSS308PEH6327XTSA1
BSS308PEH6327XTSA1 - Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount

SC16736

Power MOSFET, P Channel, 30 V, 2 A, 0.062 ohm, SOT-23, Surface Mount

INFINEON

The BSS308PE H6327 is an OptiMOS™ P3 P-channel Small Signal Transistor with enhancement mode and logic level (4.5V rated). • ±20V Gate-source voltage • 260°C Soldering temperature • AEC-Q101 Qualified • ESD protection

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P Channel P Channel 2A 30V 0.062ohm 0.062ohm
IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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N Channel N Channel 9.7A 100V 0.2ohm 0.2ohm
ZVP3306F
ZVP3306F - SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

SC16881

SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

DIODES INC.

• Channel Type : P Channel • Transistor Polarity : P Channel • Continuous Drain Current Id : 90mA • Drain Source Voltage Vds : 60V • Drain Source On State Resistance : 14ohm • On Resistance Rds(on) : 14ohm

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P Channel P Channel 90mA 60V 14ohm 14ohm
SPP80P06PHXKSA1
SPP80P06PHXKSA1 - Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

SC15768

Power MOSFET, P Channel, 60V, 80A, 0.021 Ohm, TO-220

INFINEON

The SPP80P06P H is a SIPMOS® P-channel enhancement mode Power Transistor. This transistor consistently meets the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit character...

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P Channel P Channel 80A 60V 0.021ohm 0.021ohm
SI2302CDS-T1-GE3
SI2302CDS-T1-GE3 - Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount

SC16836

Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount

VISHAY

The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage

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N Channel N Channel 2.9A 20V 0.045ohm 0.045ohm
IRLML0040TRPBF
IRLML0040TRPBF - Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

SC16758

Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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N Channel N Channel 3.6A 40V 0.044ohm 0.044ohm
BSC093N04LSGATMA1
BSC093N04LSGATMA1 - Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount

SC16751

Power MOSFET, N Channel, 40 V, 49 A, 0.0078 ohm, PG-TDSON, Surface Mount

INFINEON

The BSC093N04LS G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high sys...

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N Channel N Channel 49A 40V 0.0078ohm 0.0078ohm
BSP613PH6327XTSA1
BSP613PH6327XTSA1 - Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

SC16854

Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

INFINEON

The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. • Enhancement mode • Avalanche...

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P Channel P Channel 2.9A 60V 0.11ohm 0.11ohm
IRFB3206PBF
IRFB3206PBF - Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

SC17003

Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...

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N Channel N Channel 210A 60V 0.003ohm 0.003ohm
IRLML2030TRPBF
IRLML2030TRPBF - Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

SC16739

Power MOSFET, N Channel, 30 V, 2.7 A, 0.08 ohm, SOT-23, Surface Mount

INFINEON

The IRLML2030TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for load/system switch, DC switches and battery protection. It is compatible with existing surface-mount technique...

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N Channel N Channel 2.7A 30V 0.08ohm 0.08ohm
DMP4065S-7
DMP4065S-7 - Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

SC15956

Power MOSFET, P Channel, 40V, 2.4A, 0.064 Ohm, SOT-23, SMD

DIODES INC.

• Channel Type : P Channel • Transistor Polarity : P Channel • Continuous Drain Current Id : 2.4A • Drain Source Voltage Vds : 40V • Drain Source On State Resistance : 0.064ohm • On Resistance Rds(on) : 0.064ohm

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P Channel P Channel 2.4A 40V 0.064ohm 0.064ohm
STD30NF06LT4
STD30NF06LT4 - Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

SC16912

Power MOSFET, N Channel, 60 V, 35 A, 0.022 ohm, TO-252 (DPAK), Surface Mount

STMICROELECTRONICS

The STD30NF06LT4 is a N-channel STripFET™II Power MOSFET with single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment s...

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N Channel N Channel 35A 60V 0.022ohm 0.022ohm
PMV20ENR
PMV20ENR - SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

SC16980

SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

NEXPERIA

The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...

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N Channel N Channel 6A 30V 0.017ohm 0.017ohm
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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P Channel P Channel 23A 100V 0.117ohm 0.117ohm