MOSFET Transistors

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Transistor Polarity Drain Source Voltage Vds Continuous Drain Current Id On Resistance Rds(on) Power Dissipation Pd
 
 
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IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

SC15755

 
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Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...

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N Channel 100V 5.6A 0.54ohm 43W
IRF540PBF
IRF540PBF - Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB

SC15756

 
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Power MOSFET, N Channel, 100V, 28A, 0.077 Ohm, TO-220AB

VISHAY

The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. • Dynamic dV/dt rating • Repetitive avalanche rated • 175°C Ope...

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N Channel 100V 28A 0.077ohm 150W
2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ON SEMICONDUCTOR

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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N Channel 60V 200mA 5ohm 400mW
RFP50N06
RFP50N06 - Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

SC08222

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220AB, Through Hole

ON SEMICONDUCTOR

The RFP50N06 is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for a...

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N Channel 60V 50A 0.022ohm 131W
NTR4501NT1G
NTR4501NT1G - Power MOSFET, N Channel, 20 V, 3.2 A, 0.08 ohm, SOT-23, Surface Mount

SC16717

 
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Power MOSFET, N Channel, 20 V, 3.2 A, 0.08 ohm, SOT-23, Surface Mount

ON SEMICONDUCTOR

The NTR4501NT1G is a 20V N-channel Power MOSFET with leading planar technology for low gate charge/fast switching. It is suitable with DC-DC conversion, load/power switch for portables and computing. • 2.5V Rated for low voltage gate drive • ±12V Gate to s...

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N Channel 20V 3.2A 0.08ohm 1.25W
BUZ11-NR4941
BUZ11-NR4941 - Power MOSFET, N Channel, 50V, 30A, 0.03 Ohm, TO-220AB

SC15774

 
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Power MOSFET, N Channel, 50V, 30A, 0.03 Ohm, TO-220AB

ON SEMICONDUCTOR

The BUZ11_NR4941 is a 50V N-channel Power MOSFET designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive pow...

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N Channel 50V 30A 0.03ohm 75W
STP36NF06L
STP36NF06L - Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

SC11127

Power MOSFET, N Channel, 60 V, 30 A, 0.032 ohm, TO-220, Through Hole

STMICROELECTRONICS

• N-channel, 60V, 30A STripFET™ II power MOSFET • Exceptional dv/dt capability • 100% avalanche tested • Used for switching application • Low threshold drive • Low on-resistance and rugged avalanche characteristics

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N Channel 60V 30A 0.032ohm 70W
2N7002ET1G
2N7002ET1G - Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

SC15987

 
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Power MOSFET, N Channel, 60V, 310mA, 0.86 Ohm, SOT-23, SMD

ON SEMICONDUCTOR

The 2N7002ET1G is a N-channel small signal MOSFET in Trench technology and low drain to source voltage. Suitable for low side load switch and level shift circuits. • ±20V Gate-source voltage • Halogen-free • 1.2A Pulsed drain current

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N Channel 60V 310mA 0.86ohm 420mW
FDB14N30TM
FDB14N30TM - Power MOSFET, N Channel, 300 V, 14 A, 0.24 ohm, TO-263 (D2PAK), Surface Mount

SC16938

 
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Power MOSFET, N Channel, 300 V, 14 A, 0.24 ohm, TO-263 (D2PAK), Surface Mount

ON SEMICONDUCTOR

The FDB14N30TM is an UniFET™ N-channel high voltage MOSFET produced from on semiconductor's family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and highe...

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N Channel 300V 14A 0.24ohm 140W
BS170
BS170 - Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

SC06956

Power MOSFET, N Channel, 60 V, 500 mA, 1.2 ohm, TO-92, Through Hole

ON SEMICONDUCTOR

The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perfo...

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N Channel 60V 500mA 1.2ohm 830mW
STW45NM50
STW45NM50 - Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

SC15829

 
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Power MOSFET, N Channel, 550V, 45A, 0.1 ohm, TO-247,

STMICROELECTRONICS

The STW45NM50 is a 550V N-channel Power MOSFET developed using revolutionary MDmesh™ technology, which associates the multiple drain process with the PowerMESH™ horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and e...

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N Channel 550V 45A 0.1ohm 417W
STP6NK90Z
STP6NK90Z - Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220

SC15822

 
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Power MOSFET, N Channel, 900V, 5.8A, 2 Ohm, TO-220

STMICROELECTRONICS

The STP6NK90Z is a 900V N-channel Zener-protected SuperMESH™ Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance signifi...

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N Channel 900V 5.8A 2ohm 140W
FDV301N
FDV301N - SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA

SC16698

 
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SMD MOSFET N Channel Digital FET Power Transistor, SOT-23, 25V, 220mA

ON SEMICONDUCTOR

The FDV301N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been especially tailored to minimize the onstate resistance and maintain low gate charge...

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BSN20-7
BSN20-7 - Power MOSFET, N Channel, 50 V, 500 mA, 1.3 ohm, SOT-23, Surface Mount

SC15958

 
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Power MOSFET, N Channel, 50 V, 500 mA, 1.3 ohm, SOT-23, Surface Mount

DIODES INC.

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N Channel 50V 500mA 1.3ohm 600mW
IRLZ34NPBF
IRLZ34NPBF - Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

SC11125

Power MOSFET, N Channel, 55 V, 27 A, 0.035 ohm, TO-220AB, Through Hole

INFINEON

The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known ...

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N Channel 55V 27A 0.035ohm 56W
2N7000-D26Z
2N7000-D26Z - Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92

SC15741

 
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Power MOSFET, N Channel, 60V, 200mA, 5 Ohm, TO-92

ON SEMICONDUCTOR

The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be...

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N Channel 60V 200mA 5ohm 400mW
BSS138....
BSS138.... - MOSFET, N, SOT23

SC06981

MOSFET, N, SOT23

ON SEMICONDUCTOR

MSL:MSL 1 - Unlimited; Continuous Drain Current Id:220mA; Current Id Max:220mA; Current Temperature:25°C; Device Marking:BSS138; Drain Source Voltage Vds:50V; External Depth:2.5mm; External Length / He

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FQP30N06L
FQP30N06L - Power MOSFET, N Channel, 60V, 32A, 0.027 Ohm, TO-220AB

SC15775

 
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Power MOSFET, N Channel, 60V, 32A, 0.027 Ohm, TO-220AB

ON SEMICONDUCTOR

The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance a...

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N Channel 60V 32A 0.027ohm 79W
BSS138P,215
BSS138P,215 - Power MOSFET, N Channel, 60V, 360mA, 0.9 Ohm, SOT-23, SMD

SC16002

 
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Data Sheet
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Power MOSFET, N Channel, 60V, 360mA, 0.9 Ohm, SOT-23, SMD

NEXPERIA

The BSS138P is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • AEC-Q101 Qualified • Very Fast Switching • ESD Protection Upto 1.5kV • Logic Level Compatible

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N Channel 60V 360mA 0.9ohm 420mW
BUK9875-100A/CUX
BUK9875-100A/CUX - Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

SC15953

 
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Power MOSFET, N Channel, 100V, 7A, 0.062 ohm, SOT-223, SMD

NEXPERIA

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N Channel 100V 7A 0.062ohm 8W
BSS138LT1G
BSS138LT1G - Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD

SC15995

 
New product
Data Sheet
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Power MOSFET, N Channel, 50V, 200mA, 3.5 Ohm, SOT-23, SMD

ON SEMICONDUCTOR

The BSS138LT1G from On Semiconductor is surface mount, 50V N channel power MOSFET in SOT-23 package. Features low threshold voltage, ideal for low voltage applications. Typical applications include DC-DC converters, power management in portable and battery...

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N Channel 50V 200mA 3.5ohm 225mW
FQP50N06
FQP50N06 - Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220, Through Hole

SC08211

Power MOSFET, N Channel, 60 V, 50 A, 0.022 ohm, TO-220, Through Hole

ON SEMICONDUCTOR

The FQP50N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withs...

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N Channel 60V 50A 0.022ohm 120W
STP55NF06
STP55NF06 - Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

SC15840

 
New product
Data Sheet
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Power MOSFET, N Channel, 60V, 50A, 0.015 ohm, TO-220

STMICROELECTRONICS

The STP55NF06 is a 60V N-channel Power MOSFET realized with unique STripFET process. It has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC conv...

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N Channel 60V 50A 0.015ohm 30W
FQP6N80C
FQP6N80C - Power MOSFET, N Channel, 800 V, 5.5 A, 2.1 ohm, TO-220, Through Hole

SC11100

Power MOSFET, N Channel, 800 V, 5.5 A, 2.1 ohm, TO-220, Through Hole

ON SEMICONDUCTOR

The FQP6N80C is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and h...

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N Channel 800V 5.5A 2.1ohm 158W
BS170-D27Z
BS170-D27Z - Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

SC15773

 
New product
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Power MOSFET, N Channel, 60V, 500mA, 1.2 Ohm, TO-92

ON SEMICONDUCTOR

The BS170_D27Z is a N-channel enhancement-mode FET produced using high cell density DMOS technology. It is designed to minimize ON-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring...

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N Channel 60V 500mA 1.2ohm 830mW