MOSFET Transistors

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BSH103,215
BSH103,215 - Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

SC19198

Power MOSFET, N Channel, 30V, 850mA, 0.4 Ohm, TO-236AB, SMD

NEXPERIA

The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH...

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N Channel 850mA 30V 0.4ohm
SI2319DS-T1-E3
SI2319DS-T1-E3 - Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

SC19376

Power MOSFET, P Channel, 40V, 3A, 0.065 Ohm, TO-236, SMD

VISHAY

The SI2319DS-T1-E3 is a -40V P-channel TrenchFET? Power MOSFET. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices. • ...

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P Channel 3A 40V 0.065ohm
SQ2362ES-T1_GE3
SQ2362ES-T1_GE3 - Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

SC19375

Power MOSFET, N Channel, 60V, 4.3A, 0.125 Ohm, SOT-23, SMD

VISHAY

• TrenchFET® power MOSFET • 100% Rg and UIS tested

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N Channel 4.3A 60V 0.125ohm
BSS123,215
BSS123,215 - Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

SC19225

Power MOSFET, N Channel, 100V, 150mA, 3.5 Ohm, SOT-23, SMD

NEXPERIA

The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line...

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N Channel 150mA 100V 3.5ohm
IRF510PBF
IRF510PBF - Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

SC15755

Power MOSFET, N Channel, 100V, 5.6A, 0.54 Ohm, TO-220AB

VISHAY

The IRF510PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Dri...

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N Channel 5.6A 100V 0.54ohm
VP3203N3-G
VP3203N3-G - Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

SC16929

Power MOSFET, Enhanced-Mode, P Channel, 30 V, 650 mA, 0.6 ohm, TO-92, Through Hole

MICROCHIP

This low threshold, enhancement-mode (normally-off) transistor utilises a vertical DMOS structure and Supertex's well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors...

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P Channel 650mA 30V 0.6ohm
BSS138PW,115
BSS138PW,115 - Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

SC16000

Power MOSFET, N Channel, 60V, 320mA, 0.9 Ohm, SOT-323, SMD

NEXPERIA

The BSS138PW is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic Level Compatible • Very Fast Switching • ESD Protection Upto 1.5kV • AEC-Q101 Qualified

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N Channel 320mA 60V 0.9ohm
IRFP260NPBF
IRFP260NPBF - N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

SC16898

N Channel Power MOSFET, HEXFET, 200V, 50A, 0.04 Ohm, TO 247AC

INFINEON

The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully aval...

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N Channel 50A 200V 0.04ohm
SPW20N60C3FKSA1
SPW20N60C3FKSA1 - Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

SC16942

Power MOSFET, N Channel, 650 V, 20.7 A, 0.19 ohm, TO-247, Through Hole

INFINEON

The SPW20N60C3 is a Cool MOS™ Power Transistor with ultra low gate charge, new revolutionary high voltage technology, periodic avalanche rated, extremely dv/dt rated and qualified according to JEDEC for target applications. • High peak current capabi...

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N Channel 20.7A 650V 0.19ohm
FDB14N30TM
FDB14N30TM - Power MOSFET, N Channel, 300 V, 14 A, 0.24 ohm, TO-263 (D2PAK), Surface Mount

SC16938

Power MOSFET, N Channel, 300 V, 14 A, 0.24 ohm, TO-263 (D2PAK), Surface Mount

ONSEMI

The FDB14N30TM is an UniFET™ N-channel high voltage MOSFET produced from on semiconductor's family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and highe...

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N Channel 14A 300V 0.24ohm
IRF520NPBF
IRF520NPBF - Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

SC08214

Power MOSFET, N Channel, 100 V, 9.7 A, 0.2 ohm, TO-220AB, Through Hole

INFINEON

The IRF520NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known ...

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N Channel 9.7A 100V 0.2ohm
IRFB3206PBF
IRFB3206PBF - Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

SC17003

Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

INFINEON

The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits. • Fully characterized ...

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N Channel 210A 60V 0.003ohm
SI2302CDS-T1-GE3
SI2302CDS-T1-GE3 - Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount

SC16836

Power MOSFET, N Channel, 20 V, 2.9 A, 0.045 ohm, TO-236, Surface Mount

VISHAY

The SI2302CDS-T1-GE3 is a 20V N-channel TrenchFET® power MOSFET for use in load switching for portable devices. • ±8V Gate to source voltage

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N Channel 2.9A 20V 0.045ohm
ZVP3306F
ZVP3306F - SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

SC16881

SMD P Channel Power MOSFET, Enhancement Mode Vertical DMOS FET Power, 60V, 90mA, 14 Ohm, SOT-23

DIODES INC.

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P Channel 90mA 60V 14ohm
PMV20ENR
PMV20ENR - SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

SC16980

SMD N Channel Power MOSFET, 30V, 6A, 0.017 Ohm, TO-236AB

NEXPERIA

The PMV20ENR from NEXPERIA is a N Channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Suitable for Relay driver, High-speed line driver, Low-side ...

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N Channel 6A 30V 0.017ohm
BSP613PH6327XTSA1
BSP613PH6327XTSA1 - Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

SC16854

Power MOSFET, P Channel, 60 V, 2.9 A, 0.11 ohm, SOT-223, Surface Mount

INFINEON

The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics. • Enhancement mode • Avalanche...

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P Channel 2.9A 60V 0.11ohm
IRLML0040TRPBF
IRLML0040TRPBF - Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

SC16758

Power MOSFET, N Channel, 40 V, 3.6 A, 0.044 ohm, SOT-23, Surface Mount

INFINEON

The IRLML0040TRPBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. Compatible with existing surface mount techniques. • Industry-standard pinout • MSL1, Consumer qualification • Environment-friendly • Increased relia...

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N Channel 3.6A 40V 0.044ohm
NDS355AN
NDS355AN - Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount

SC06991

Power MOSFET, N Channel, 30 V, 1.7 A, 0.065 ohm, SOT-23, Surface Mount

ONSEMI

The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low ...

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N Channel 1.7A 30V 0.065ohm
IRF9540NPBF
IRF9540NPBF - Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

SC08221

Power MOSFET, P Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole

INFINEON

The IRF9540NPBF is -100V single P channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to ...

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P Channel 23A 100V 0.117ohm
2N7000
2N7000 - Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

SC06951

Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole

ONSEMI

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching perf...

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N Channel 200mA 60V 5ohm
STW20NK50Z.
STW20NK50Z. - Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole

SC06409

Power MOSFET, N Channel, 500 V, 17 A, 0.23 ohm, TO-247, Through Hole

STMICROELECTRONICS

Automotive Qualification Standard:-; Continuous Drain Current Id:17A; Drain Source Voltage Vds:500V; MSL:-; No. of Pins:3Pins; On Resistance Rds(on):0.23ohm; Operating Temperature Max:150°C; Power Dissi

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N Channel 17A 500V 0.23ohm
STW12NK80Z.
STW12NK80Z. - Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole

SC06406

Power MOSFET, N Channel, 800 V, 10.5 A, 0.65 ohm, TO-247, Through Hole

STMICROELECTRONICS

The STW12NK80Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-b...

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N Channel 10.5A 800V 0.65ohm
FDD4243
FDD4243 - Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount

SC11198

Power MOSFET, P Channel, 40 V, 14 A, 0.036 ohm, TO-252 (DPAK), Surface Mount

ONSEMI

The FDD4243 is a P-channel MOSFET produced using PowerTrench® technology to deliver low RDS (ON) and optimized Bvdss capability to offer superior performance benefit in the applications. • High performance Trench technology for extremely low RDS (ON)

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P Channel 14A 40V 0.036ohm
2N7002
2N7002 - Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount

SC11027

Power MOSFET, N Channel, 60 V, 115 mA, 1.2 ohm, SOT-23, Surface Mount

ONSEMI

The 2N7002 is a N-channel enhancement mode Field Effect Transistor produced using high cell density and DMOS technology. It minimizes on-state resistance while providing rugged, reliable and fast switching performance. It can be used in most applications r...

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N Channel 115mA 60V 1.2ohm
IRFU9024NPBF
IRFU9024NPBF - Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

SC11062

Power MOSFET, P Channel, 55 V, 11 A, 0.175 ohm, TO-251AA, Through Hole

INFINEON

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d...

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P Channel 11A 55V 0.175ohm